• 제목/요약/키워드: Phonon density of states

검색결과 7건 처리시간 0.023초

First-principles study of the electronic and thermal transport properties of carbon chains

  • Kim, Hu Sung;Park, Min Kyu
    • EDISON SW 활용 경진대회 논문집
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    • 제2회(2013년)
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    • pp.238-239
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    • 2013
  • We studied the thermal and electron properties of covalent one-dimensional (1D) monatomic linear chains of carbon, particularly carbyne. We found the ${\alpha}$-carbyne (Polyyne, alternating single and triple C-C bond co-existing) is more stable than ${\beta}$-carbyne (Equally-spaced based on C-C double bond) energetically. As investigation of electron density of states (EDOS), polyyne and cumulene had different electronic characteristic, which corresponding metallic and semiconducting respectively. We also calculate the phonon dispersion, phonon density of states (PDOS) and phonon transmission of carbynes.

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FCC구조에서 포논분산과 비열 (Phonon Dispersion and Specific Heat in FCC Structure)

  • 정재동;이경태
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 추계학술대회
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    • pp.1207-1212
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    • 2004
  • A model for the phonon dispersion relationship for cubic zinc sulfide structure, for example SiC, is developed in terms of two unknown force constants. Born model that incorporates bond bending and bond stretching, is used for the force constants. The force constants are determined by fitting to experimental data. Using only the nearest-neighbor coupling results in $6{\times}6$ sized dynamic matrix. The eigenvalues of dynamics matrix for each wavenumber in 3-D ${\kappa}$ space correspond to frequencies, 3 for optical phonon and 3 for acoustic phonon, which is so-called dispersion relation (${\kappa}$-${\omega}$). The density of state is determined by counting the states for each frequency bin, and the properties such as specific heat and thermal conductivity can be obtained. The specific heat is estimated on this model and compared with experiment and other models, i.e. Debye model, Einstein model and combined Debye-Einstein model. In spite of the simple bond potential model, reasonable agreements are found.

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Investigation on the phonon behavior of MgB2 films via polarized Raman spectra

  • R. P. Putra;J. Y. Oh;G. H. An;H. S. Lee;B. Kang
    • 한국초전도ㆍ저온공학회논문지
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    • 제26권1호
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    • pp.14-19
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    • 2024
  • In this study, we explore the anisotropy of electron-phonon coupling (EPC) constant in epitaxially grown MgB2 films on c-axis oriented Al2O3, examining its correlation with the critical temperature (Tc) and local structural disorder assessed through polarized Raman scattering. Analysis of the polarized Raman spectra reveals angle-dependent variations in the intensity of the phonon spectra. The Raman active mode originating from the boron plane, along with two additional phonon modes from the phonon density of states (PDOS) induced by lattice distortion, was distinctly observed. Persistent impurity scattering, likely attributed to oxygen diffusion, was noted at consistent frequencies across all measurement angles. The EPC values derived from the primary Raman active phonon do not significantly vary with changing observation angles, followed by that the Tc values calculated using the Allen and Dynes formula remain relatively constant across all polarization angles. Although the E2g phonon mode plays a crucial role in the EPC mechanism, the determination of Tc values in MgB2 involves not only electron-E2g coupling but also contributions from other phonon modes.

Energy separation and carrier-phonon scattering in CdZnTe/ZnTe quantum dots on Si substrate

  • 만민탄;이홍석
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.191.2-191.2
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    • 2015
  • Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

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Calculation of thermal neutron scattering data of MgF2 and its effect on beam shaping assembly for BNCT

  • Jiaqi Hu;Zhaopeng Qiao;Lunhe Fan;Yongqiang Tang;Liangzhi Cao;Tiejun Zu;Qingming He;Zhifeng Li;Sheng Wang
    • Nuclear Engineering and Technology
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    • 제55권4호
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    • pp.1280-1286
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    • 2023
  • MgF2 as a moderator material has been extensively used in the beam shaping assembly (BSA) that plays an important role in the boron neutron capture therapy (BNCT). Regarded as important for applications, the thermal neutron scattering data of MgF2 were calculated, based on the phonon expansion model. The structural properties of MgF2 were researched by the VASP code based on the ab-initio methods. The PHONOPY code was employed to calculate the phonon density of states. Furthermore, the NJOY code was used to calculate the thermal neutron scattering data of MgF2. The calculated inelastic cross sections plus absorption cross sections are in agreement with the available experimental data. The neutron transport in the BSA has been simulated by using a hybrid Monte-Carlo-Deterministic code NECP-MCX. The results indicated that compared with the calculation of the free gas model, the thermal neutron flux and epithermal neutron flux at the BSA exit port calculated by using the thermal neutron scattering data of MgF2 were reduced by 27.7% and 8.2%, respectively.

Effects of fission product doping on the structure, electronic structure, mechanical and thermodynamic properties of uranium monocarbide: A first-principles study

  • Ru-Ting Liang;Tao Bo;Wan-Qiu Yin;Chang-Ming Nie;Lei Zhang;Zhi-Fang Chai;Wei-Qun Shi
    • Nuclear Engineering and Technology
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    • 제55권7호
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    • pp.2556-2566
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    • 2023
  • A first-principle approach within the framework of density functional theory was employed to study the effect of vacancy defects and fission products (FPs) doping on the mechanical, electronic, and thermodynamic properties of uranium monocarbide (UC). Firstly, the calculated vacancy formation energies confirm that the C vacancy is more stable than the U vacancy. The solution energies indicate that FPs prefer to occupying in U site rather than in C site. Zr, Mo, Th, and Pu atoms tend to directly replace U atom and dissolve into the UC lattice. Besides, the results of the mechanical properties show that U vacancy reduces the compressive and deformation resistance of UC while C vacancy has little effect. The doping of all FPs except He has a repairing effect on the mechanical properties of U1-xC. In addition, significant modifications are observed in the phonon dispersion curves and partial phonon density of states (PhDOS) of UC1-x, ZrxU1-xC, MoxU1-xC, and RhxU1-xC, including narrow frequency gaps and overlapping phonon modes, which increase the phonon scattering and lead to deterioration of thermal expansion coefficient (αV) and heat capacity (Cp) of UC predicted by the quasi harmonic approximation (QHA) method.

풀밴드 모델을 이용한 77K Si의 포논산란 및 임팩트이온화에 관한 연구 (Phonon Scattering and Impact ionization for Silicon using Full Band Model at 77K)

  • 유창관;고석웅;정학기;이종인
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 1999년도 추계종합학술대회
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    • pp.552-554
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    • 1999
  • 포논산란과 임팩트이온화 모델은 풀밴드 모델과 페르미 황금법칙을 이용한 고에너지 영역에서 hot carrier 전송을 해석하기 위해서 제시되어 왔다. 본 연구에서는 77K와 300k에서 실제에너지 밴드 구조를 이용한 Si의 임팩트이온화 과정에 대해서 온도 의존성을 조사했다. 풀밴드 모델은 local form factors을 이용한 의사포텐셜방법에서 얻어지고, 산란율 계산에 이용된다. 정확한 임팩트이온화율 계산은 파동벡터와 주파수에 의존하는 유전함수를 필요로 한다. 포논 산란율은 상태밀도에 선형적으로 의존하기 때문에 포논산란율과 상태밀도의 비에 대한 선형함수 유도에 의해서 구해진다 임팩트이온화율 $P_{ii}$ 는 first principle's theory로부터 계산되어지고, 수정된 Keldysh 공식에 의해서 최적화되었다.

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