• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.448-453
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• 2019

This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.97-102
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• 2005

This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the $950^{\circ}C$ and $1050^{\circ}C$. This was confirmed that the sintering temperature of PZTN was reduced by $950^{\circ}C$ and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties.

• Journal of the Korean Graphic Arts Communication Society
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• v.14 no.1
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• pp.115-131
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• 1996

The PVT(pressure-volume-temperature) relation of main-chain dimer liquid crystals having structures such as $\alpha$,$\omega$-bis[(4,4`-cyanobiphenyl) oxy] alkane(CBA-n with=9, 10) were studied. these dimer liquid crystals are known to form an enantiotropic nematic mesophase. In this work, we have determined the volume change as a function of temperature and pressure by using a GNOMIX PVT apparatus. In the V-Tcurves obtaind from isobaris mearements on various pressures, volume changes were observed at the nematic-isotropiz and nematic-crystal phase transitions. The volume changes at the transition exhibit slight odd-even effect with respect to the number of methylene unit n. The values of the (S)v obtained at the NI transition for CBA-9 and -10 were 6.9 and 12.6J/mol k. The valuesof (S)v for the CN transition were estimated on the basis of DSC(differential scanning calorimetry) data: 58.8(CBA-9) and 65.3J/mol k (CBA-10). For both transition, it was found that the correction about the volume change is significant, ranging from 40% to 60% of the total transition entropy observed under constant pressure.

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.05a
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• pp.35-35
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.268-271
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• 2004

The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Journal of Magnetics
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• v.12 no.3
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• pp.108-112
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• 2007

Nature of phase transition in $LaVO_3$ has been studied using X-ray diffraction, SQUID magnetometer, and $M\"{o}ssbauer$ spectroscopy with 1% of $^{57}Fe$ doped sample. The crystal structure was orthorhombic with space group Pnma. Antiferromagnetic phase transition temperature $T_N$ was 140K, below which a weak ferromagnetic trace has been found. $M\"{o}ssbauer$ spectra below $T_N$ were single set of hyperfine sextet, which enabled us to discard the possibility of two inequivalent magnetic sites or uncompensated antiferromagnetism. Hyperfine magnetic field abruptly disappeared as low as about 90K, much below $T_N$.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.12-12
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• 2002

Lanthanum manganites have been extensively studied for the application to magnetic devices since the colossal magnetoresistance of these compounds has been observed [1]. The critical temperatures, Tc, of manganites La/sub 0.7/Ca/sub 0.3-x/Ba/sub x/MnO₃ increased as the content of Ba increased except the abrupt jump near the critical concentration. The step like behavior of the critical temperature for a similar compound has been known to be related to the structural phase transition [2]. To understand the step like behavior of Tc, the EXAFS technique is applied to the La/sub 0.7/Ca/sub 0.3-x/Ba/sub x/MnO₃ compound system. The ordering between the manganese and oxygen was examined by this method. The EXAFS analysis shows that the coordination numbers were not changed before and after the phase transition, the bonding distance between manganese and oxygen is about 1.94 ± 0.02 Å, which is consistent with other work [3] and the Debye waller parameters were about σ²= 0.0037 ± 0.0005 Ų for x=0.0 and x=3.0, respectively. The value of Debye-Waller parameter for x=0.09 is about σ² = 0.0050 ± 0.0005 Ų in about phase transition concentration. Based on the Debye-Waller parameters, it is shown that the ordering between manganese and oxygen is significantly reduced near the phase transition concentration.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.39 no.5
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• pp.7-11
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• 2007

Kraft pulping of Trema orientalis (Nalita) was studied in order to find kinetic data for delignification. Pulping runs were carried out in the temperature range of $160-180\;^{\circ}C$ under constant and well-defined conditions. The delignification was found to be first order with respect to residual lignin and was chemically controlled. The rate of delignification reaction was increased 1.11-1.23 for $10\;^{\circ}C$ temperature increase in the range of $160-180\;^{\circ}C$ range. A mean value of 93% of lignin was removed at the transition between bulk and residual delignification. The influence of cooking temperature on the rate constant was expressed by an Arrhenius-type equation. The obtained activation energy of the delignification reaction was 6,164 cal/mol. The transition point between bulk and residual phase was shifted to lower lignin and carbohydrate yield with the increase of temperature.

• Archives of Pharmacal Research
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• v.9 no.2
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• pp.75-79
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• 1986

The effect of phenothiazine derivatives on the thermotropic transition of liposomal lipid bilayer made of dipalmitoyl phosphatidylchline and dipalmitoyl phosphatidic acid was investigated with differential scanning calorimetry. The thermograms of the liposomal bilayer incorporated with levomepromazine, chlopromazine, prochloperazine, perphenazine and fluphenazine were obtained and the size of cooperative unit of the transition were calculated from the ratio of the van't Hoff enthalpy change to the calculated enthalpy change of the transition. The results showed that incorporation of phenothiazine derivatives into the liposomal bilayer reduced the transition temperature at which the transition from solid state to liquid-crystalline state occurs, and broadened the thermogram peaks. Phenothiazine derivatives also significantly reduced the size of cooperative unit of the transition. The effect of the drugs was proportional to the concentration of the drug in the bilayer. This means that phenothiazine derivatives might have significant fluidizing effects on the biomembrane. The sizes of cooperative unit were successfully corrlated with phar-macological activities of the drugs and the surface pressure increases of lipid monolayer by these drugs. These correlations might be ascribed to a possible hydrophobic nature of interaction between the biomembrane and the drugs involved in their pharmacology.