• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Proceedings of the IEEK Conference
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• summer
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• pp.218-220
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• 2004

A new wide-band VCO topology using Miller capacitance is proposed. Contrary to conventional VCO using the Miller capacitance where the variable amplifier gain is negative, the proposed VCO uses both the negative and positive variable amplifier gain to enhance the frequency tuning range significantly. The proposed VCO is simulated using HSPICE. The simulations show that 410MHz and 220MHz frequency tuning range are obtained using the negative .and positive variable amplifier gain, respectively. The tuning range of the proposed VCO is $23\%$ of the center frequency(2.8GHz). The phase noise is -104dBc/Hz at 1MHz offset by simple model. The operating current is only 3.84mA at 2.5V power supply.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.889-897
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• 2016

This paper presents an improved approach for compensating rotor position signal displacement in brushless DC (BLDC) motors with misaligned hall-effect sensors. Typically, the hall-effect sensors in BLDC motors are located in each phase and positioned exactly 120 electrical degrees apart. However, limitations in mechanical tolerances make it difficult to place hall-effect sensors at the correct location. In this paper, a position error compensator to counteract the hall-effect sensor positioning error is proposed. The proposed position error compensator uses least squares error analysis to adjust the relative position error and back-EMF information to reduce the absolute offset error. The effectiveness of the proposed approach is verified through several experiments.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.5
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• pp.69-76
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• 2004

In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.2
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• pp.67-71
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• 2012

In this paper, a push-push oscillator at K-band with a double H-shape metamaterial resonator (DHMR) based on high-Q is proposed with metamaterial structure to improve the phase noise and output power. The proposed oscillator shows low phase noise and high output power. DHMR is designed to be high-Q at resonance frequency through strong coupling of E-field. oscillators which are combined in push-push structure improve output power. The propose push-push oscillator shows the output power of 3.1 dBm, the fundamental signal suppression of -23.7 dBc and phase noise of -116.28 dBc at 100 kHz offset frequency and 20.20 GHz center frequency.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.451-454
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• 2011

In this paper, a wideband clock generator using novel Automatic frequency calibration(AFC) scheme is proposed. Wideband clock generator using AFC has the advantage of small VCO gain and wide frequency band. The conventional AFC compares whether the feedback frequency is faster or slower then the reference frequency. However, the proposed AFC can detect frequency difference between reference frequency with feedback frequency. So it can be reduced an operation time than conventional methods AFC. Conventional AFC goes to the initial code if the frequency step changed. This AFC, on the other hand, can a prior state code so it can approach a fast operation. In simulation results, the proposed clock generator is designed for DisplayPort using the CMOS ring-VCO. The VCO tuning range is 350MHz, and a VCO frequency is 270MHz. The lock time of clock generator is less then 3us at input reference frequency, 67.5MHz. The phase noise is -109dBC/Hz at 1MHz offset from the center frequency. and power consumption is 10.1mW at 1.8V supply and layout area is $0.384mm^2$.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.335-338
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• 2004

We suggest Q-band MEMS MIMIC (Millimeter wave Monolithic Integrated Circuit) HEMT Oscillator using DAML (Dielectric-supported Airgapped Mcrostrip Line) structure. We elevated the signal lines from the substrate using dielectric post, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency. These DAML are composed with heist of $10\;{\mu}m$ and post size with $20\;{\mu}m\;{\times}\;20\;{\mu}m$. The MEMS oscillator was successfully integrated by the process of $0.1\;{\mu}m$ GaAs PHEMTs, CPW transmission line and DAML. The phase noise characteristic of the MEMS oscillator was improved more than 7.5 dBc/Hz at a 1 MHz offset frequency than that of the CPW oscillator And the high output power of 7.5 dBm was measured at 34.4 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.89-95
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• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.6
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• pp.570-579
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• 2009

In this paper, we presented a Vt-DRO with a wide electrical frequency tuning range, using open-loop gain method. The Vt-DRO was composed of 3-stages, resonator, amplifier and phase shifter. In order to satisfy an oscillation condition, we determined magnitude and phase of each stage. The measured S-parameter of cascaded 3-stages shows open-loop oscillation condition. Also, using measured open loop group delay, we derived the relation for electrical frequency tuning range. The Vt-DRO was implemented by connecting the input and the output of the designed open-loop and resulted in closed-loop. As a results, tuning-range of Vt-DRO is 82 MHz, which is close to the predicted results for tuning voltage 0${\sim}$10 V and shows linear frequency tuning at the center frequency of 5.3 GHz. The phase noise is -104 ${\pm}$1 dBc/Hz at 100 kHz offset frequency and power is 5.86${\pm}$1 dBm respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1652-1656
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• 2014

In this work, we demonstrated a 77 GHz waveguide VCO with transition from WR-12 to WR-10 for anti-collision radar applications. The fabricated waveguide VCO consists of a GaAs-based Gunn diode, a varactor diode, a waveguide transition, and two bias posts for operating as a LPF and a resonator. The cavity is designed for fundamental mode at 38.5 GHz and operated at second hormonic of 77 GHz. The waveguide transition has a 1.86 dB of insertion loss and -30.22 dB of S11 at the center frequency of 77 GHz. The fabricated VCO achieves an oscillation bandwidth of 870 MHz. Output power is from 12.0 to 13.75 dBm and phase noise is -100.78 dBc/Hz at 1 MHz offset frequency from the carrier.