• Journal of the Korean Magnetics Society
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• v.19 no.6
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• pp.191-196
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• 2009

Magnetic bias phenomena of field-annealed CoFeSiB amorphous ribbons showing asymmetric giant magnetoimpedance was investigated by MOKE method. The specimens removed the crystalline layer at one surface side by chemical etching were prepared and measured magnetization curves by MOKE to investigate the effect of the crystalline layer on magnetization of inner soft amorphous phase. We observed the shift of hysteresis loop, and concluded that the crystalline layer exerts bias field effect on inner soft amorphous phase and the direction of bias filed is opposite to the magnetization direction of surface crystalline layer.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.169-171
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• 2007

We need two operation modes to obtain the complex hologram without bias and the conjugate image in the modified triangular interferometer(MTI). To solve the problem, we proposed the optimized MTI with one wave plate, which can obtain cosine and sine functions by the combination of one wave plate and one linear polarizer. In the extraction of phase term using the combination of polarization components, the phase error occurs, and we simulated such potential phase errors in the optimized MTI.

• Journal of the Optical Society of Korea
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• v.11 no.1
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• pp.10-17
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• 2007

We need two operation modes to obtain the complex hologram without bias and the conjugate image in the modified triangular interferometer (MTI). To solve the problem, we proposed the optimized MTI with one wave plate, which can obtain cosine and sine functions by the combination of one wave plate and one linear polarizer. In the extraction of phase term using the combination of polarization components, the phase error occurs, and we analyzed such potential phase errors in the optimized MTI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Progress in Superconductivity and Cryogenics
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• v.6 no.2
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• pp.29-34
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• 2004

The linear type flux pump aims to compensate a little bit decremental persistent current of the HTS magnet in NMR and MRI spectrometers. The flux pump mainly consists of DC bias coil, 3-phase AC coil and Nb foil. The persistent current in closed superconductive circuit can be easily adjusted by the 3-phase AC current, its frequency and the DC bias current. In the experiment, it has been investigated that the flux pump can effectively charge the current in the load coil of 543 mH for various frequencies in 18 minutes under the DC bias of 10 A and the AC of 5 $A_{rms}$. The maximum magnitudes of pumping current and load magnet voltage are 0.72 A/min and 20 ㎷, respectively. Based on simulation results by the FEM are proved to nearly agree with experimental ones.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.148-154
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• 2003

Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.4
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• pp.252-258
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• 1987

Time periodic finite element solutions for sinusoidally excited electromagnetic field problems in moving media are presented. Solutions by the Galerkin method contain spurious oscillations when grid Peclet number is more than one. To suppress these oscillations an upwind finite element method using two different time periodic test functions is introduced. One is multiplied to second and first-order space derivative terma and the other to the time derivative term. Test functions are obtained from trial functions by adding or subtracting quadratic bias functions with appropriate scaling factors. Phase differences are considered between trial functions and bias functions. For simple interpretations of the phase differences, complex scaling factors are used. The proposed method is developed to give nodally exact solutions for uniform grid spacing in one dimensional problems. Based on the one dimensional results, a two dimensional upwinding scheme is also derived.

• Korean Journal of Materials Research
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• v.33 no.9
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.117-119
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• 2007

We need two operation modes to obtain the complex hologram without bias and the conjugate image in the modified triangular interferometer(MTI). To solve the problem, we proposed the optimized MTI with one wave plate, which can obtain cosine and sine functions by the combination of one wave plate and one linear polarizer. In the extraction of phase term using the combination of polarization components, the phase error occurs, and we analyzed such potential phase errors in the optimized MTI.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1111-1116
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• 2011

In this paper, a 60 GHz bidirectional active phase shifter with 130 nm CMOS is presented by replacing CMOS passive switchs in switched-line type phase shifter with Common Gate Amplifier(bidirectional amplifier). Bidirectional active phase shifter is composed of bidirectional amplifier blocks and passive delay line network blocks. The suitable topology of bidirectional amplifier block is CGA(Common Gate Amplifier) topology and matching circuits of input and output are symmetrical due to design same characteristic of it's forward and reverse way. The direction(forward and reverse way) and amplitude of amplification can be controlled by only one bias voltage($V_{DS}$) using combination bias circuit. And passive delay line network blocks are composed of microstrip line. An 1-bit phase shifter is fabricated by Dongbu HiTek 1P8M 130-nm CMOS technology and simulation results present -3 dB average insertion loss and respectively 90 degree and 180 degree phase shift at 60 GHz.