• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.113.1-113.1
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• 2007

• Electrical & Electronic Materials
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• v.16 no.1
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• pp.59.1-59
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.214-215
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.110-110
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.91.2-91.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.182-183
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• 2002

고밀도 자기기록이 가능하기 위해서는 Ku가 크고 노이즈가 작은 매체가 필요하다. CoCrPt 기록층은 보자력이 크고 열적으로 안정하나 결정립크기가 크고 결정립간 교환 상호작용이 커서 노이즈가 크다.[1][2] 한편 CoCrPt 에 Ta, B 등 제4원소를 첨가하면 결정립이 크기가 감소하고 노이즈는 감소하나 Ku가 감소하여 열적으로 불안정해진다.[3] (중략)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.281-286
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• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.112.1-112.1
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• 2007

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.824-828
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• 1996

Co-based alloy thin films ddeposited by fcing targets sputtering(FTS) were investigated for use in high-density magnetic recording media to determine how their magnetic properties are dependent on the sputtering conditions, and thus to find appropriate parameters that allow the sputtering and thin films to meet the specificiations for magnetic properties. FTS can discharge at lower working gas pressure than other sputtering methods such as dcmagnetron sputteing because the plasma is sufficiently confined by a magnetic field applied perpendicular to both of the target planes, which results in plasma-free substrates. Co-Cr-Ta films were deposited by FTS on glass and silicon substrates at substrate temperature between room temperature and $350^{\circ}C$, and at argon gas pressure between 0.1 and 10mTorr. The films were also deposited on polyimide tapes at substrate temperature of $130^{\circ}C$ and argon gas pressure of 1 mTorr. The effective advantages of Ta as an additional element were investigated, using the same films on the tapes. As a result of the experiment, it was found that better magnetic properties were obtained in the ranges of higher temperature and lower argon gas pressure with background pressure in thr range of $1.5 \times 10^{-6}$ Torr. Ta addition at 2 to 4 atomic percent almost havled the Co-Cr grain sizes, indicating that Ta addition at an appropriate atomic percent is effective for improving the microstructure and characteristics of Co-Cr films.

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.235-241
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• 1996

Co/Pd and Co/Pt multilayered thin films for perpendicular magnetic recording media were fabricated by sput¬tering method and the effects of the sputtering pressure during the formation of Pd or Pt underlayers on the magnetization behavior and coercivity of the multilayers were investigated. It was found that the coercivity of Co/Pd multilayers was strongly dependent on the sputtering pressure of underlayer and could be enhanced to a large extent merely by increasing the sputtering pressure of underlayer, while in case of Co/Pt films, the degree of coercivity enhancement by controlling the sputtering pressure of underlayer was almost negligible. Coercivity variation of Co/Pd and Co/Pt multilayers with the underlayer material and deposition pressure of underlayer could be well explained in terms of the interface roughness of multilayer films induced by underlayer topology, which could also be correlated to the change of perpendicular anisotropy energy and magnetic reversal feature with the sputtering pressure of underlayer. Kerr rotation angle was hardly affected by the preparation conditions of underlayers.