• 제목/요약/키워드: Perpendicular anisotropy

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Effect of Magnetic Property Modification on Current-Induced Magnetization Switching with Perpendicular Magnetic Layers and Polarization-Enhancement Layers

  • Kim, Woo-Jin;Lee, Kyung-Jin;Lee, Taek-Dong
    • Journal of Magnetics
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    • 제14권3호
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    • pp.104-107
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    • 2009
  • The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

고성능 NdFeB 수직 박막자석의 자기적 특성 (Magnetic properties of high performance NdFeB perpendicular thin film)

  • 김만중;양재호;김윤배;김택기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.802-805
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    • 2000
  • Anistropic [Ta/NdFeB/Ta] thin film was sputtered on heated Si substrate by Nd$\_$17/Fe$\_$74/B$\_$9/ target. The grain size of the films increased according to the increase of substrate temperature, and the film deposited at 650$^{\circ}C$ showed optimum coercivity. 4$\pi$M$\_$r/, $\_$i/H$\_$c/ and (BH)$\_$max/ measured perpendicular to the film plane of thin film deposited at 650$^{\circ}C$ are 12.3 kG, 9.9 kOe and 37 MGOe, respectivly.

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나노패턴된 기판 위에서의 그래핀의 비등방성 전자 수송 특성 (Anisotropic Electronic Transport of Graphene on a Nano-Patterned Substrate)

  • 칼릴 하피츠;켈렉시 오즈구르;노화용;시에 야홍
    • 한국진공학회지
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    • 제21권5호
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    • pp.279-285
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    • 2012
  • 주기적인 나노트랜치 패턴이 있는 기판 위에 놓인 CVD 그래핀의 전도특성을 측정하였다. 나노트랜치에 대해 평행한 방향과 수직한 방향 사이에 전도특성의 큰 비등방성을 발견하였다. 전기 전도의 방향이 나노트랜치에 수직한 경우, 약한 한곳모임의 특성에 있어서도 큰 차이점이 발견되었는데, 이는 퍼텐셜 변조에 의해 생겨나는 전하밀도의 비균일성에 의해 생겨나는 것으로 해석된다.

4f spin dynamics in TbNi$_2$B$_2$C by $^{11}$B NMR

  • Lee, K.H.;Seo, S.W.;Kim, D.H.;Khang, K.H.;Seo, H.S.;Hwang, C.S.;Hong, K.S.;Cho, B.K.;Lee, W.C.;Lee, Moo-Hee
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.61-64
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    • 2000
  • $^{11}$B NMR measurements have been performed to investigate local electronic structure and 4f spin dynamics for TbNi$_2$B$_2$C single crystal. $^{11}$B NMR spectra show three resonance peaks due to the quadrupolar interaction. Shift and linewidth are huge and strongly temperature-dependent. In addition, both are proportional to magnetic susceptibility, indicating that the hyperfine field at the boron site originates from the 4f spins of Tb. $^{11}$B NMR shift and relaxation rates show high anisotropy for field parallel and perpendicular to the c-axis. Anisotropy of the shift and the relaxation rates suggests that the hyperfine field perpendicular to the c-axis is larger.

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칼코게나이드 박막에서 전계효과에 의한 편광 홀로그래피 회절효율 특성 (The properties of diffraction efficiency in polarization holography using the chalcogenide thin films by the electric field effects.)

  • 장선주;여철호;박정일;정홍배
    • 한국전기전자재료학회논문지
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    • 제13권9호
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    • pp.791-795
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    • 2000
  • Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.

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