• 제목/요약/키워드: Perpendicular anisotropy

검색결과 279건 처리시간 0.023초

Perpendicular Magenetic Anisotropy in TbFeCo Magneto Optic Recording Thin Films

  • Lee, Yong-Ho-;Lee, Sang-Soo-
    • 한국광학회:학술대회논문집
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    • 한국광학회 1988년도 광학 및 양자전자학 워크샵
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    • pp.127-131
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    • 1988
  • In order to clarify the origin of perpendicular anisotropy in thermally evaporated TbFeCo amorphous thin films, we have investigated the effects of deposition angle on magnetic Kerr hysteresis loop, perpendicular magnetic anisotropy and internal stress depend strongly on the deposition angle and above a threshold value(30$^{\circ}$), the perpendicular anisotropy disapperars and the in-plane anisotropy appears. The measurement of internal stress is the major contribution to the perpendicular anisotropy. The measurements of Kerr hysteresis loops in the polar and the longitudinal directions show that as the deposition angle increases the polar kerr hystresis loop deteriorates while the longitudinal Kerr hystersis loop becomes prominent.

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Metastable Vortex State of Perpendicular Magnetic Anisotropy Free Layer in Spin Transfer Torque Magnetic Tunneling Junctions

  • You, Chun-Yeol;Kim, Hyungsuk
    • Journal of Magnetics
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    • 제18권4호
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    • pp.380-385
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    • 2013
  • We find a metastable vortex state of the perpendicular magnetic anisotropy free layer in spin transfer torque magnetic tunneling junctions by using micromagnetic simulations. The metastable vortex state does not exist in a single layer, and it is only found in the trilayer structure with the perpendicular magnetic anisotropy polarizer layer. It is revealed that the physical origin is the non-uniform stray field from the polarizer layer.

Advanced Circuit-Level Model of Magnetic Tunnel Junction-based Spin-Torque Oscillator with Perpendicular Anisotropy Field

  • Kim, Miryeon;Lim, Hyein;Ahn, Sora;Lee, Seungjun;Shin, Hyungsoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.556-561
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    • 2013
  • Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

Interfacial Magnetic Anisotropy of Co90Zr10 on Pt Layer

  • 길준표;서동익;배기열;박완준;최원준;노재성
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.356.2-356.2
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    • 2014
  • Spin Transfer Torque (STT) is of great interest in data writing scheme for the Magneto-resistive Random Access Memory (MRAM) using Magnetic Tunnel Junction (MTJ). Scalability for high density memory requires ferromagnetic electrodes having the perpendicular magnetic easy axis. We investigated CoZr as the ferromagnetic electrode. It is observed that interfacial magnetic anisotropy is preferred perpendicular to the plane with thickness dependence on the interfaces with Pt layer. The anisotropy energy (Ku) with thickness dependence shows a change of magnetic-easy-axis direction from perpendicular to in-plane around 1.2 nm of CoZr. The interfacial anisotropy (Ki) as the directly related parameters to switching and thermal stability, are estimated as $1.64erg/cm^2$ from CoZr/Pt multilayered system.

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고상에피택시 YIG 박막의 온도에 따른 자기특성 (Temperature Dependence of Magnetic Properties of YIG films Grown by Solid Phase Epitaxy)

  • 장평우;김종렬
    • 한국자기학회지
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    • 제15권1호
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    • pp.25-29
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    • 2005
  • 고상에피택시방법으로 성장한 YIG 박막의 온도에 따른 자기특성의 변화를 결정이방성과 수직이방성을 중심으로 측정하였다. 고상에피택시법의 열처리 온도가 낮을 경우 전위가 발생하여 응력을 해소함으로써 수직이방성이 유도되지 않았으나 높은 온도에서 열처리된 박막에는 우수한 에피택시성장으로 잔류응력이 축적되어 수직이방성이 유도되었다. 수직이방성자장은 기판과 박막의 열팽창계수의 차이로 결정자기이방성이 없어지는 온도까지 선형으로 감소하였고, 보자력도 온도가 증가하면 감소하였다. YIG(111) 에피택시박막에 수직이방성이 유도되었을 경우 결정이방성상수 $K_1$$H_k=4K_1/3M_s$로부터 결정할 수 있었다. 온도에 따른 초자화율의 거동은 Hopkinson 효과로 잘 설명되어졌으며 측정결과를 이용하명 상자성 자화율이 큰 기판위에 성장한 박막의 큐리온도를 쉽게 측정할 수 있었다.

Initial Magnetization and Coercivity Mechanism in Amorphous TbxCo1-x Thin Films with Perpendicular Anisotropy

  • Kim, Tae-Wan;Lee, Ha-Na;Lee, Hyun-Yong;Lee, Kyoung-Il
    • Journal of Magnetics
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    • 제15권4호
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    • pp.169-172
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    • 2010
  • The coercivity mechanism in permanent magnets was analyzed according to the effects of domain nucleation and domain wall pinning. The coercivity mechanism of a TbCo thin film with high perpendicular magnetic anisotropy was considered in terms of the local inhomogeneity in the thin film. The initial magnetization curves of the TbCo thin films demonstrated domain wall pinning to be the main contributor to the coercivity mechanism than domain nucleation. Based on the coercivity model proposed by Kronmuller et al., the inhomogeneity size acting as a domain wall pinning site was determined. Using the measured values of perpendicular anisotropy constant ($K_u$), saturation magnetization ($M_s$), and coercivity ($H_c$), the inhomogeneity size estimated in a TbCo thin film with high coercivity was approximately 9 nm.

GMR in Multilayers with an Alternating In-plane and Perpendicular Anisotropy

  • Stobiecki, F.;Szymanski, B.;Lucinski, T.;Dubowik, J.;Urbaniak, M.;Roll, K.;Kim, J.B;Kim, K.W;Lee, Y.P
    • Journal of Magnetics
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    • 제9권2호
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    • pp.40-46
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    • 2004
  • The magnetic properties of sputtered ($Ni_{83}Fe_{17}/Au/Co/Au$) multilayers with various thicknesses of Au (0.5 {\leq} t_{Au} {\leq} 3 nm), Ni-Fe ($1{\leq}t_{Ni-Fe}{\leq}4nm$) and Co ($0.2{\leq}t_{co}{\leq}1.5nm$) layers were characterized. An alternating in-plane and out-of-plane anisotropy of the ferromagnetic layers was achieved for the structures ($t_{Au}{\geq}1.5nm$) showing a weak coupling between the Ni-Fe layers with an in-plane anisotropy and the Co layers ($0.3{\leq}t_Co{\leq}1.2nm$) with a perpendicular anisotropy. For such a structure, a detailed discussion on the GMR effect is presented, relating to the magnetization reversal from a mutually perpendicular magnetic configuration at the remanence to a parallel one at the saturation. An influence of the dense labyrinth domain structure on the magnetoresistance effect is also addressed.

Co-Cr-(Ta) 수직자기기록용 박막의 자기이방성에 대한 연구 (A Study on the Magnetic Anisotropy of Co-Cr-(Ta) Thin Films for Perpendicular Magnetic Recording)

  • 황충호;박용수;신경호;이택동
    • 한국자기학회지
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    • 제3권3호
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    • pp.208-214
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    • 1993
  • Ta을 미량 첨가한 Co-Cr-Ta 박막의 높은 수직보자력의 원인을 알아보기위하여 회전우력자력계 (torque magnetometer)와 진동시료형 자력계(VSM)를 이용하여 Co-Cr 박막과 Co-Cr-Ta 박막의 수직자기이방 성에너지를 조사하였다. Co/sub 81.7/Cr/sub 16.7/Ta/sub 1.6/ 박막의 수직이방성에너지는 동일 기판온도에 서 성막한, 비슷한 용질원자량의 Co/sub 81/Cr/sub 19/ 박막보다 높았다. 그 원인을 분석하기 위하여 as- sputtered 상태의 박막들을 annealing 처리한 후 수직자기이방성에너지의 변화를 조사하였다. annealing 처 리에 의해 수직자기이방성에너지는 감소하였다. 이러한 annealing 처리에 의한 수직자기이방성에너지의 감 소량은 CoCrTa 박막의 경우 더 켰으며, annealing 처리후의 수직자기이방성에너지는 이원계 및 삼원계 박막 에서 비슷한 값을 보였다. 이는 Ta 첨가에 의해 as-sputtered 박막내 용질원자의 편석(segregation) 정도가 증가하며, 이러한 편석 의 증가로 박막내에 형태자기이방성의 기여가 증가하여 수직자기이방성에너지의 증가가 있었던 것으로 해석 된다. 또한 이 러한 용질원자의 편석의 증가에 의한 수직자기이방성에너지의 증가로 박막의 보자력도 증가 한 것으로 생각된다.

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TiO2 씨앗층을 이용한 다양한 기판에서의 Co/Pd 층의 수직 자기 이방성에 대한 연구 (Perpendicular Magnetic Anisotropy in Co/Pd Layer with TiO2 Seed Layer on the Various Substrates)

  • 강물빛;윤정범;이정섭;유천열
    • 한국자기학회지
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    • 제23권1호
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    • pp.7-11
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    • 2013
  • 본 연구에서는 $TiO_2$/Co/Pd 구조의 다층박막을 마그네트론 스퍼터링으로 GaAs(100), MgO(100), MgO(111), Si(100), glass와 같은 다양한 종류의 기판에 대해 제작하여 수직 자기 이방성에 대해서 연구하였다. 산소 분압 등의 $TiO_2$ 층의 증착 조건과 기판의 종류에 따른 Co/Pd 층의 수직 자기 이방성을 측정하였다. 그 결과, $TiO_2$ 층이 5 nm 이하 일 때는 기판의 종류에 영향을 받지만, 그 이상의 두께에 대해서는 MgO(111)을 제외한 기판의 영향이 크지 않음을 확인하였고, 이는 $TiO_2$ 씨앗층의 성장조건과 계면의 거칠기, 결정방향 등과 관련이 있음을 발견하였다.

NiO Thickness Dependences of Perpendicular Magnetic Anisotropy in the [CoFe/Pt] Multilayers

  • Kim, S.W;Lee, J.Y;Lee, S.S;Hahn, E.J;Hwang, D.G
    • Journal of Magnetics
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    • 제9권4호
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    • pp.121-124
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    • 2004
  • NiO thickness dependences of perpendicular magnetic anisotropy (PMA) in the $NiO/[CoFe/Pt]_5$ multilayers for exchange biasing and $[CoFe/Pt]_4/Pt/[CoFe/Pt]_4$ for interlayer exchange coupling were investigated. Perpendicular magnetization curve was obtained by out-of-plane extraordinary Hall measurement. Magnetic force microscopy (MFM) has been used for the investigation of magnetic domains on thin films. We confirmed that the interlayer exchange coupling (IEC) as a function of NiO thickness at room temperature existed with a period of two monolayers.