• Electrical & Electronic Materials
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• v.8 no.1
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• pp.83-89
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• 1995

In this paper, the specimens-($Ba_{0.997}$ L $a_{0.003}$)Ti $O_{3}$ + xTi $O_{2}$, x=0.005, 0.01, 0.02, 0.03[mol]- were fabricated by a solid-state reaction method which is easy in microstructure control and good in mass production. Their crystalline structures and microstructures were analysed, and electrical properties were investigated. The perovskite-crystalline structure is confirmed by XRD, and it is exhibited by SEM that the grain grows with an addition of Ti $O_{2}$. Resistivity decreases with increasing sinteiing temperature, and the specimen of ($Ba_{0.997}$ L $a_{0.003}$)Ti $O_{3}$ + 0.02Ti $O_{2}$ sintered at 1350.deg. C shows the best PTC effects. The complex impedance plots exhibit the serial equivalent circuit of ( $R_{gb}$ / $C_{gb}$ ) and $R_{g}$ it is realized that PTC effect is attributed to the resistivity of grain boundary.ary.y.