• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.168-170
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• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1014-1019
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• 2006

The influence of the number of solution coatings on the densification of the PZT thick films was studied. PZT powder and PZT precursor solution was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were (A) PZT(80/20)/PZT(20/80), (B) PZT(70/30)/PZT(30/70) and (C) PZT(60/40)/PZT(40/60), (D) PZT(52/48)/PT. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 moth and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about $60{\mu}m$. A grain size was increased with increasing the coating number. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of PZT thick films was improved 30-100% as the number of coatings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.379-384
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• 1996

The microwave dielectric properties of (I-x)CaTiO$_{3}$-xLaAIO$_{3}$ were investigated. The solid solution of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ had the perovskite structure in the range of all compositions. The crystal system of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ was transformed to orthorhombic(x.leq.0.4), psudo-cubic(x=0.5), and rhombohedral (x.geq.0.7) in turn, as the amount of LaAIO$_{3}$ increased. The dielectric constant and temperature coefficient of resonant frequency of solid solution were decreased with the content of LaAIO$_{3}$, whereas, the value of Q . f$_{o}$ was increased. The microwave dielectric material having Q . f$_{o}$ = 32, 500, .epsilon.$_{r}$ = 42, and .tau.$_{f}$ = 5 ppm/.deg. C was obtained from the 0.35CaTiO$_{3}$-0.65LaAIO$_{3}$ composition sintered at 1600.deg. C for 4hrs.hrs.hrs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.33-38
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• 2003

Highly homogeneous PZT powder was prepared by a partial oxalate method using chemicals of (Z $r_{0.53}$ $Ti_{0.47}$) $O_2$, Pb(N $o_3$)$_2$and (COOH)$_2$ㆍ2$H_2O$. N $b_2$ $O_{5}$ addition effect on microstructure and electrical properties of PZT ceramics was investigated. When the precursors were calcined at 71$0^{\circ}C$, a single perovskite phase was obtained. After sintering at 110$0^{\circ}C$, X-ray diffraction Patterns showed coexistence of rhombohedral and tetragonal phases regardless of the N $b_2$ $O_{5}$ content. As the content of N $b_2$ $O_{5}$ increased, grain size decreased but sintered density increased. The electromechanical coupling factor of kp and the piezoelectric constant of $d_{31}$ increased linearly with the content of N $b_2$ $O_{5}$, and those values reached 0.7 and -200, respectively, when 1.2 mol% of N $b_2$ $O_{5}$ is added. is added.ded.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.105-107
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• 1988

The dielectric properties of complex perovskite compound Sr$(Mg_{1/3}Mb_{2/3})$$O_3$-Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$(BMN) system were investigated as a function of composition and sintering time. In the case of the specimens sintered at $1650^{\circ}C$ for same time, dielectric constant and dielectric loss were increased with increasing the mole ratio of BMN. The maximum temperature coefficient of resonant frequency was found in composition Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$. In the case of the specimens with same composition, dielectric constant and dielectric loss were slightly increased with increasing the sintering time. As the sintering time was increased, the temperature coefficient of resonant frequency for SMN was slightly increased, however, that of BMN and ($Sr_{1/2}Ba_{1/2}$) ($Mg_{1/3}Ta_{2/3}$)$O_3$ was largely depended on sintering time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.764-769
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• 2002

The effect of excess Bi contents on the ferroelectric properties of B $i_{3.25}$ L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) thin films has been investigated. Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/ $SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10% excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of 326 and dielectric loss of 0.024. The BLT thin films showed little polarization fatigue test up to 3.5$\times$10$^{9}$ bipolar switching cycling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.731-735
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• 2001

S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.646-651
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• 1998

In this present study, the luminescence characteristics and mechanism of energy $CaTiO_3$:Pr phosphor were studied using disk specimens sintered at various temperatures and envirenment. A single-phase $CaTiO_3$:Pr was synthesized by sintering above 140$0^{\circ}C$ and its crystal structure was found to be perovskite orthorhombic. A dominant peak around 360 nm and a broad peak around 395 nm were observed in the PLE(Photoluminescence Excitation) spectrum of $CaTiO_3$:Pr with fixed emission wavelength at 612 nm, the decay time of 360 nm excitation was found to be longer than that of 395 nm excitation. From this result, it is assumed that the free carrier excited to 360 nm is transferred to 395 nm energy level. Therefore, the decrease in 395 nm intensity observed in CaTiO$_3$:Pr specimens sintered in Ar gas environment induced shorter decay time and improved CL luminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.