• 한국항해항만학회지
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• 제34권2호
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• pp.111-115
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• 2010

In this paper, the electromagnetic (EM) wave absorbers using TiO2 as a dielectric material with chlorinated polyethylene (CPE) were investigated in W-band radio frequencies. We compared the relative permittivity with reflectionless curve and the absorption properties of samples containing 40 wt.%, 50 wt.%, 60 wt.%, 70 wt.%, and 80 wt.% TiO2. It is possible to realize a complex relative permittivity satisfying the reflectionless condition by choosing composition ratio of TiO2. The optimized composition ratio of TiO2 for the maximum absorption property is about 70 wt.%. As a result, we have confirmed the realization of an EM wave absorber with a high absorption property in W-band radio frequencies.

• Journal of electromagnetic engineering and science
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• 제8권3호
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• pp.110-113
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• 2008

In this paper, we designed and fabricated an electromagnetic(EM) wave absorber for automotive radar in cars using $TiO_2$ as a dielectric material and chlorinated polyethylene(CPE) as a binder. First of all, we confirmed that the optimum composition ratio of $TiO_2$ was about 70 wt.%. The complex relative permittivity of a sample containing $TiO_2$: CPE=70:30 wt.% was calculated from S-parameter. The EM wave absorption abilities were simulated for the EM wave absorbers of different thickness using the calculated relative permittivity, and the EM wave absorber was manufactured based on the simulated design. A comparison of simulated and measured results is in good agreement. Measurement shows that a 1.85 mm thick absorber has absorption ability higher than 20 dB in the frequency range of $76{\sim}77$ GHz for automotive radars.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• E2M - 전기 전자와 첨단 소재
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• 제11권10호
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2002년도 학술대회논문집
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• pp.329-334
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• 2002

This study evaporates TiO$_2$ layer thickness differently with RF sputtering method on Si Wafer(n-100). Thin film is made with the structure of Si+TiO$_2$ and Si+TiO$_2$+Al by evaporating TiN which is used as Antireflection of superintegrated semiconductor integrated circuit with Photo Catalyst. The research is performed to increase the characteristics of photon energy according to TiO$_2$ thickness and the reliability and reproducibility of TiO$_2$ thin film. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant ($\varepsilon$$_1$, $\varepsilon$$_2$) has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국진공학회지
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• 제4권S1호
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• pp.138-144
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• 1995

It is commonly believed that high permittivity materials will be necessary for future high density Gbit DRAMs. In a first part, we explain the choice of SrTiO3 by ECR MOCVD for Gbit-scale DRAMs. In a second part, after describing the ECR MOCVD system and presenting the requirements SrTiO3 thin films should meet for use in Gbit-scale DRAMs, the physical and electrical properties of srTiO3 thi film prepared by ECR MOCVD are then studied. A stacked capacitor technology, suitable for use in 1 Gbit DRAM, and comprising high permittivity SrTiO3 thin films prepared by ECR MOCVD at $450^{\circ}C$ on electron beam and RIE patterned RuO2/TiN storage nodes is finally described.

• 한국진공학회지
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• 제10권2호
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• pp.207-212
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• 2001

본 연구에서는 솔젤법에 의해 최적의 유전특성을 갖는 $TiO_2$ 박막의 제작조건을 정한다. 이를 위해 최적의 조건으로 합성된 sol을 이용하여 박막을 제작한 후 박막의 유전율을 측정한다. 가수분해에 필요한 물의 양이 화학양론적인 양보다 적은 경우에는 직쇄상 구조를 갖는 투명 sol이 생성되고 많은 경우에는 cluster상 입자를 갖는 현탁 sol이 생성된다. 또한 박막의 유전율은 $120^{\circ}C$ 부근을 시작으로 지수함수적으로 증가하는 것을 알 수 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.79-81
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• 2004

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1148-1151
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• 2002

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.117-120
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• 2008

본 논문은 차량 충돌방지 레이더의 허상방지용 전파흡수체를 유전손실재료인 $TiO_2$을 이용하여 개발하였다. 먼저 전파흡수체 샘플을 유전손실재료인 $TiO_2$ 와 바인더인 CPE를 사용하여 조성비별 제작하고, 네트워크 아날라이저를 이용하여 측정한 5-parameter로부터 1-Port Method를 이용하여 복소비유전율을 계산하였다. 그리고 계산된 복소비유전율을 이용하여 전파흡수체를 설계 및 제작한 결과 조성비 $TiO_2$:CPE=70:30 wt.%, 두께 1.85 mm, 주파수 76-77 GHz에서 20 dB 이상의 전파를 흡수하는 전파흡수체를 개발하였다.