• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.145-145
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• 2000

M-CeO2 (M : noble metal) catalysts have been widely studied as three-way catalysts and methanol synthesis catalysts. Ceria is thought to play a number of roles in these catalysts. The Ce(IV)/Ce(III) redox pair may store/release gases under oxidizing/reducing conditions, extending the operational window. Additionally, metal-ceria interactions lead to several effects, including the dispersion of the active components and promoting the activation of molecules such as CO or NO. Pd is a promising component to current TWC formulations and behaves particularly well when compared with Pt and Rh-based catalysts for low-temperature oxidation of Co and hydrocarbon. However the effect of Pd-ceria interactions on the physicochemical properties of Pd and the redox properties of Ce is not elucidated yet. In order to know exactly about the metal-ceria interactions, the model study are expecting to give a better environment, resulting in the wide use of the surface science tools. The substrate was Si(100) wafer, on which Ta metal was sputtered as a thickness of 100nm. The CeO2 thin film of 30nm was deposited by using the magnetron sputtering. Spin coating and magnetron sputtering methods were used to make the Pd thin film layer. The prepared sample was investigated by in-situ XPS, AES, SEM and AFM analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.415-421
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• 1999

This paper indicate that phase resolved partial discharge patterns are investigated on PET films containing artificial void of varing dimensions. In this study, we measured phase-resolved PD patterns and statistical parameter from PET specimens with IGT(insulation/airgap/insulation) structure by IEC 270 standard. Measurement system is the conventional PD detector using digital signal processing technique. The relationship of diameter and location of artificial void was discussed through the difference of $\pi$-q-n distribution and statistical analysis.

• Journal of the Korean Institute of Gas
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• v.13 no.2
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• pp.23-29
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• 2009

This study investigated sensitivity of the gas sensor to chemical weapons with the sensor material doped with catalysts. The nano-sized SnO2 powder mixed with metal oxides (TiO2) was doped with transition metals(Pt, Pd and In). Thick film of nano-sized SnO2 powder with TiO2 was prepared by screen-printing method onto Al2O3 substrates with platinum electrode and chemical precipitation method. The physical and chemical properties of sensor material were investigated by SEM/EDS, XRD and BET analyzers. The measured sensitivity to simulant toxic gas is defined as the percentage of resistance of value equation, [(Ra-Rg)/$Ra\;{\times}100$)], that of the resistance(Ra) of SnO2 film in air and the resistance(Rg) of SnO2 film in acetonitrile gas. The best sensitivity and selectivity of these thick film were shown with 1wt.% Pd and 1wt.% TiO2 for acetonitile gas at the operating temperature of $250^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.371-372
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• 2012

We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.255-262
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• 2006

Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.399-406
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• 2020

Pd nanogap hydrogen sensors were developed using an elastomeric substrate and operated through an on-off mechanism. A 10 nm thick Pd thin film was formed on a polydimethylsiloxane (PDMS) substrate, and 50% of the physical strain was applied in the longitudinal direction to fabricated uniform nanogaps. The initial concentration of the hydrogen gas for the PDMS/Pd films was controlled, and subsequently, the on-off switching response was measured. We found that the average nanogap was less than 50 nm, and the Pd nanogap hydrogen sensors operated over a wide range of temperatures. In particular, the sensors work properly even at a very low temperature of -40℃ with a fast response time of 2 s. In addition, we have investigated the relative humidity and annealing effects.

• Food Science and Biotechnology
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• v.15 no.5
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• pp.683-687
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• 2006

The respiration rate of Chinese quince was measured at 0, 5, 10, and $20^{\circ}C$ to determine its tolerable range of storage temperatures. Based on the measured respiration rates, plastic films covering a wide range of gas permeabilities were used for packaging and storing individual Chinese quince at 0 and $10^{\circ}C$. Chinese quince can be categorized as low respiration fruit. Higher respiratory quotients were observed at higher temperature suggesting that the tolerable temperature range for storage is $0-10^{\circ}C$. Packages containing Chinese quince wrapped in highly gas-permeable polyolefin film PD 941 attained, with progressive decreases in volume, 9.5-10.2% $O_2$ and 1.3-1.8% $CO_2$ at $0^{\circ}C$, 8.1% $O_2$ and 2.4% $CO_2$ at $10^{\circ}C$. At these levels, PD 941 could preserve the fruit at acceptable quality levels for 152 and 50 days at 0 and $10^{\circ}C$, respectively. Less gas-permeable packages built up high $CO_2$ concentrations (above 15.8%) and low $O_2$ concentrations (less than 1.8%) causing free volume expansion and eventual dark discoloration of the fruit. The storage life realized by packaging with polyolefin film PD 941 could facilitate the availability of Chinese quinces in winter and spring for medicinal or ornamental purposes in the fresh state.

• Applied Microscopy
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• v.47 no.3
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• pp.208-213
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• 2017

The microstructural changes in Co nanoparticles and an Au-10at.%Pd thin film have been investigated using an in situ heating holder with a micro-electro-mechanical system (MEMS). In Co nanoparticles, two phases (face-centered cubic and hexagonal close-packed crystal structures) were found to coexist at room temperature and microstructures at temperatures, higher than $1,000^{\circ}C$, were observed with a quick response time and significant stability. The actual temperature of each specimen was directly estimated from the changes in the lattice spacing (Bragg-peak separation). For the Au-10at.%Pd thin film, at a set temperature of $680^{\circ}C$, the actual temperature of the sample was estimated to be $1,020^{\circ}C{\pm}123^{\circ}C$. Note that the specimen temperature should be carefully evaluated because of the undesired effects, i.e., the temperature non-uniformity due to the sample design of the MEMS chip, and distortion due to thermal expansion.

• Journal of Ginseng Research
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• v.25 no.2
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• pp.94-100
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• 2001

The influence of cultivation condition and harvest time on the storage stability of the fresh ginseng (50g) individually packaged in a soft film bag (ONY/LDPE/L-LDPE; 200$\times$300 mm, 90㎛) was investigated. When the fresh ginsengs were divided into four groups of direct-planted ginseng on the paddy soil(PD), transplanted ginseng on the upland(UT) and each group was stored at 25$\^{C}$ for 40 days, the quality deterioration rate was the highest in PD group while PT, UD and UT groups exhibited similar quality patterns from each other. When each group was stored at 10$\^{C}$, the quality deterioration rate was also the highest in PD group and the other three groups exhibited similar quality patterns from each other till 90 days passed after storage. However, the quality deterioration rate of UT group was 54% which was higher than UD group or PT group 180 days after storage. When the fresh ginseng harvested between September of 1997 and October of 1998 was individually packaged with the soft film and stored at 25$\^{C}$ for 12 days, the quality deterioration rate was the lowest in the group harvested in October while relatively high in the groups harvested between July and September.