• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.597-601
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• 2002

In this study, the structural, dielectric and piezoelectric properties of $Pb[(Ni_{1/3}Nb_{2/3})_x-(Mn_{1/3}Nb_{2/3})_{0.09-x}-(Zn_{0.505}Ti_{0.495)_0.91]O_3$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated to develop the composition ceramics for piezoelectric transformer. All the specimens were sintered at $1250^{\circ}C$ and its physical properties were measured, and the results are as follows : With increasing PNN substitution for PMN-PZT system, dielectric constant was increased and electro-mechanical coupling factor($k_p$) was increased to 0.62 at 5 mol% while mechanical quality factor(Qm) was decreased.

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.714-718
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• 2015

Both lead molybdate ($PbMoO_4$) and chromium substituted lead molybdate ($PbMo_{1-x}Cr_xO_4$) were successfully synthesized using a conventional hydrothermal method and characterized by XRD, DRS, Raman, SEM and PL. We also investigated the photocatalytic activity of these materials for the decomposition of rhodamine B under UV-visible irradiation. The XRD and Raman results revealed the successful synthesis of well-crystallized $PbMoO_4$ crystals with the diameter of 51-59 nm, regardless of the addition of chromium ion. The DRS spectra of $PbMo_{1-x}Cr_xO_4$ catalysts showed new intensive absorption bands in the visible region. The $PbMoO_4$ catalysts showed the lowest photocatalytic activity and the activity increased with an increase of chromium substitution amounts under visible irradiation. PL peaks appeared at about 540-580 nm for all catalysts and excitonic PL signals were proportional to the photocatalytic activity for the decomposition of rhodamine B.

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.127-132
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• 2002

High speed performance of ferroelectric Pb(Zr,Ti)$O_3$ (PZT) based capacitors is reported. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a ($Ti_{0.9}$ /$Al_{0.1}$ )N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures.

• Journal of the Korean Society for Heat Treatment
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• v.15 no.3
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• pp.113-117
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• 2002

Fatigue characteristics of ferroelectric $Pb(Zr,Ti)O_3$ (PZT) based capacitors through donor doping is reported in this paper. La substitution up to 10% were carried out to study systematically the fatigue behaviors of epitaxial ferroelectric capacitors grown on Si using $(Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10% La show sufficient low voltage switched polarization and fatigue free performance. Systematic decrease in the tetragonality of the ferroelectric phase (i.e., c/a ratio) results in the corresponding reduction in coercive voltage, sufficient remnant polarization at 1.5-3V, and good fatigue property.

• Journal of the Korean Applied Science and Technology
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• v.21 no.2
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• pp.164-173
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• 2004

The capacity and long life of gel electrolyte batteries is connected with gas recombination producting $PbO_2$ and Pb electrode. We prepared with sulfuric acid gel electrolyte to know gel characteristics per density to assemble valve regulated lead-acid (VRLA) batteries. We studied on actions of sulphuric acid gel electrolyte by measuring electrolyte dispersion using Brewster-angle microscope (BAM), charge-discharge cycle, and electrode structure using scanning election microscope (SEM). Sulphuric acid density 1.210 showed excellent gel dispersion in sol condition, electrode condition after fifty cycles in this study.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.157-160
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• 2002

The ferroelectric domain variation and electrical performance of $Pb(Zr,Ti)O_{3}$ (PZT) based capacitors through La additions were systematically studied. La substitution up to 10 % was performed to lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10 % La show significantly lower coercive voltage compared to capacitors with 0 % and 3 % La. This is attributed to a systematic microstructure change into $180^{\circ}C$ domain and decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. These capacitors show promise as storage elements in low power memory architectures.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.62-68
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• 1986

$(Pb_{1-x} La_x)(Zr_{0.65} Ti_{0.35})_{1-x/4}O_3$ (PLZT X/65/35) powders were prepared by molten salt synthesis using NaCl-K Cl and conventional calcining of oxides. The effects of molten salt on formation and charactrization of PLZT powder and on dielectric piezolectric and optical properties of PLZT ceramics were studied, The completed PLZT powder formation in the presence of fused salt was attained at 50-10$0^{\circ}C$ lower temperature than that in solid state reaction and the particle size of the powder made by molten salt synthesis was markedly increased with increasing calcining temperature. The substitution of Na and/or K ions in NaCl-KCl for Pb ion in process of molten salt synthesis was increased with increasing La concentration Z. These substituted Na and/or K ions were identified as the origins of decreasing coupl-ing factor and optical transmittance of PLZT ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.257-261
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• 2004

Recently, Pb free solder technologies are developed, and start using for many packaging items. But this technology contains many problems. They are very high re-flow temperature and high cost than normal solder paste. Specially, high re-flow temperature effects heavy damage to packaging and occur many crack to packaging. We developed special ACI (anisotropic conductive ink) that becomes substitution of solder paste. This technology cans adhesive lower temperature such as $120\~150^{\circ}C$. Adhesion time is very short, too. This technology is suitable for mass production.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.