• 제목/요약/키워드: Patterned PVP film

검색결과 5건 처리시간 0.024초

Silver Immobilization on Honeycomb-patterned Polyvinypyrrolidone thin Films via an Electroless Process

  • Kim, Bong-Seong;Kim, Won-Jung;Kim, Young-Do;Huh, Do-Sung
    • Bulletin of the Korean Chemical Society
    • /
    • 제32권12호
    • /
    • pp.4221-4226
    • /
    • 2011
  • Honeycomb-patterned polyvinypyrrolidone (PVP) thin films coated with nanometer-sized silver particles were prepared using honeycomb-patterned polystyrene (PS) template films fabricated by casting a polystyrene solution under humid condition. Silver was first metallized on the patterned PS films via silver nitrate ($AgNO_3$) reduction using tetrathiafulvalene (TTF) and a small amount of PVP as the reductant and dispersing agent, respectively. The effects of $AgNO_3$, TTF, and PVP solution concentrations during the reduction process in acetonitrile were determined to obtain a uniform silver-coated honeycomb-patterned PS film. Second, the silver-metallized patterned porous PS films were filled with high PVP concentration solutions via the spincoating process. Silver-coated patterned PVP films were obtained by peeling off the PVP layer from the template PS film after drying. The results show that the honeycomb-patterned PVP films uniformly coated with silver particles are conveniently obtained using the silver-coated patterned PS template, although the direct fabrication of these films using water droplets under humid conditions was not feasible because of the water solubility of PVP.

넓은 다이내믹 레인지의 유연 촉각센서 적용을 위한 PVP 유전층과 PDMS 접착력 검증 (Verification of Bonding Force between PVP Dielectric Layer and PDMS for Application of Flexible Capacitive-type Touch Sensor with Large Dynamic Range)

  • 원동준;허명;김준원
    • 로봇학회논문지
    • /
    • 제11권3호
    • /
    • pp.140-145
    • /
    • 2016
  • In this paper, we fabricate arrayed-type flexible capacitive touch sensor using liquid metal (LM) droplets (4 mm spatial resolution). Poly-4-vinylphenol (PVP) layer is used as a dielectric layer on the electrode patterned Polyethylene naphthalate (PEN) film. Bonding tests between hydroxyl group (-OH) on the PVP film and polydimethylsiloxane (PDMS) are conducted in a various $O_2$ plasma treatment conditions. Through the tests, we can confirm that non-$O_2$ plasma treated PVP layer and $O_2$ plasma treated PDMS can make a chemical bond. To measure dynamic range of the device, one-cell experiments are conducted and we confirmed that the fabricated device has a large dynamic range (~60 pF).

Dependence of $O_2$ Plasma Treatment of Cross-Linked PVP Insulator on the Electrical Properties of Organic-Inorganic Thin Film Transistors with ZnO Channel Layer

  • Gong, Su-Cheol;Shin, Ik-Sup;Bang, Suk-Hwan;Kim, Hyun-Chul;Ryu, Sang-Ouk;Jeon, Hyeong-Tag;Park, Hyung-Ho;Yu, Chong-Hee;Chang, Ho-Jung
    • 마이크로전자및패키징학회지
    • /
    • 제16권2호
    • /
    • pp.21-25
    • /
    • 2009
  • The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.

  • PDF

잉크젯 방식으로 PVP 뱅크와 TIPS-펜타센 반도체 층을 제작한 유기 박막트랜지스터 (Organic TFTs using PVP Bank and TIPS-Pentacene Semiconductor Layer patterned by Ink Jet Printing)

  • 김세민;박종승;송정근
    • 한국전기전자재료학회논문지
    • /
    • 제22권11호
    • /
    • pp.992-998
    • /
    • 2009
  • We investigated the influence of organic solvents on the droplet properties of 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene), which was used for semiconductor of organic thin film transistors (OTFTs) and deposited by ink jet printing. From the result of the investigation, the conditions of a suitable solvent is that boiling point should be above $200^{\circ}C$ to reduce coffee stain and the surface tension above 32 dyn/cm to decrease the droplet size. Consequently, we selected tetralin which have a high boiling point ($207^{\circ}C$) and high surface tension (34.3 dyn/cm) as the solvent for TIPS-pentacene, and applied it to OTFTs. In fabrication process the conventional bank process employing photolithography and etching process was replaced by ink jet printed bank process, resulting in simplifying the process. Especially, polyvinylphenol was used for the bank, and the high hydrophobicity could improve the confinement of TIPS molecules inside the bank, enhancing the performance over the conventional hydrophilic polyvinylalcohol bank. The mobility was $0.18\;cm^2/Vs$, current on/off ratio $2.09{\times}10^5$, subthreshold slope 0.42 V/dec, and off state current $0.049\;pA/{\mu}m$.

PVP(Poly 4-vinylphenol) 게이트 유전체의 표면에너지 차이를 이용한 유기박막트랜지스터 어레이의 소스/드레인 전극 인쇄공정 (A Printing Process for Source/Drain Electrodes of OTFT Array by using Surface Energy Difference of PVP (Poly 4-vinylphenol) Gate Dielectric)

  • 최재철;송정근
    • 대한전자공학회논문지SD
    • /
    • 제48권3호
    • /
    • pp.7-11
    • /
    • 2011
  • 본 논문에서는 간단하면서도 수율 높은 유기박막트랜지스터(OTFT)의 소스/드레인 전극 형성을 위한 인쇄공정을 제안하였다. 게이트 유전체인 PVP (poly 4-vinylphenol)에 불소계 화합물을 3000 ppm 첨가하여 표면에너지를 56 $mJ/m^2$에서 45 $mJ/m^2$로 줄이고, 소스/드레인 전극이 형성될 영역은 포토리소그라피로 형상화 한 후 산소 플라즈마로 선택적으로 표면처리하여 표면에너지를 87 $mJ/m^2$로 높임으로써 표면에너지 차이를 극대화 하였다. G-PEDOT:PSS 전도성 고분자를 브러쉬 인쇄공정으로 소스/드레인 전극 영역 주변에 도포하여 전극을 성형하였으며, OTFT 어레이 ($16{\times}16$)에서 약 90% 가까운 수율을 나타내었다. 불소계 화합물을 첨가한 PVP와 펜타센 반도체를 사용한 OTFT의 성능은 첨가하지 않은 소자와 비교하여 큰 차이가 없었으며, 이동도는 0.1 $cm^2/V.sec$ 로서 전기영동디스플레이(EPD) 시트를 구동하기에 충분한 성능이었다. OTFT 어레이에 EPD 시트를 부착하여 성공적인 작동을 확인하였다.