• 마이크로전자및패키징학회지
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• 제13권3호
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• pp.13-17
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• 2006

밀도가 높고 주기적인 배열의 기공과 나노패턴이 된 텅스텐 나노점이 실리콘 산화물/실리콘 기판위에 형성이 되었다. 기공의 지름은 25 nm이고 깊이는 40 nm 이었으며 기공과 기공 사이의 거리는 60 nm이었다. nm 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성했다. 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 건식 식각용 마스크를 만들었다. 실리콘 산화막은 불소 기반의 화학반응성 식각법을 이용하여 식각했다. nm크기의 트렌치 안에 선택적으로 증착된 텅스텐 나노점을 만들기 위해서 저압화학기상증착(LPCVD)방법을 이용하였다. 텅스텐 나노점과 실리콘 트렌치의 지름은 26 nm 와 30 nm였다.

• 한국인터넷방송통신학회논문지
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• 제17권5호
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• pp.91-96
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• 2017

본 논문은 저궤도 위성 통신을 위한 미앤더 슬리브 모노폴 안테나를 제안하였다. 안테나는 평면 모노폴과 미앤더 슬리브의 그라운드와 함께 광대역 특성을 갖는다. 안테나의 모노폴 및 그라운드 도체는 동일 평면상에 있으며 동축 케이블을 이용한 공급을 통해 급전하였다. 안테나의 파라미터 변수의 특성을 확인하기 위해 상용 소프트웨어인 HFSS를 사용하였으며, 안테나 제조를 위해 유전상수가 4.4인 FR4를 사용하였다. 안테나의 크기는 $600mm{\times}20mm{\times}1.6mm$이다. 제작된 안테나의 주파수 대역은 130MHz~151MHz이고, 대역폭은 20MHz이다. 안테나의 측정결과, 반사손실은 -10dB 이상의 대역에서의 반사 손실을 얻을 수 있었다. 방사 패턴의 최대 이득은 2.64dBi이다.

• 한국세라믹학회지
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• 제39권8호
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• pp.750-757
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• 2002

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$와 $Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.

• 대한전자공학회논문지
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• 제20권1호
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• pp.22-26
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• 1983

열확산(thermal diffusion)법을 이용하여 면적이 3.36㎠인 P+N 전지와 P+NN+ 전지를 제작하였다. 100mW/㎠의 인공 조명에서 측정한 결과 940℃에서 15분 보론확산(boron Predeposition)을 하고, 800℃에서 20분 열처리(annealing)하여 제작한 P+N전지는 전면적(수광면적) 변환 효율이 13.4%(14.7%)이었다. 뒷면을 1050℃에서 인(Phosphorus)을 확산한 후, 앞면을 940℃에서 15분 보론 확산하고, 800℃에서 50분 열처리하여 만든 P+NN+전지의 전면적(수광면적) 변환 효율은 14.3%(15.6%)이었다. 뒷면의 인 확산으로 게더링(gettering) 작용과 BSF 효과에 의해서 P+NN+ 전지가 P+N전지보다 캐리어 수명이 약 2∼3배 증가되었다. 그리고 효율 개선을 위해 AR로팅, Ag전기도금, 미세한 그리드 패턴, 앞면 불순물 주입량 조절 등을 행하였다.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.62-67
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• 2012

Owing to the rapid growth of mobile and electronic equipment miniaturization technology, the supply of micro mobile computing machine has been fast raised. Accordingly they have performed many researches on energy harvesting technology to provide promising power supply equipment to substitute existing batteries. In this paper, in order to have low resonance frequency for piezoelectric energy harvester, we have tried to make it larger than before by adopting nickel that has much higher density than silicon. We have applied it for our energy harvesting actuator instead of the existing silicon based actuator. Through such new concept and approach, we have designed energy harvesting device and made it personally by making with micromachining process. The energy harvester structure has a cantilever type and has a dimension of $10{\times}2.5{\times}0.1\;mm^3$ for length, width and thickness respectively. Its electrode type is formed by using Au/Ti of interdigitate d33 mode. The pattern size and gap size is 50 ${\mu}m$. Based on the measurement of the nickel-based piezoelectric energy harvester, it is found to have 778 Hz for a resonant frequency with no proof mass. In that resonance frequency we could get a maximum output power of 76 ${\mu}W$ at 4.8 $M{\Omega}$ being applied with 1 g acceleration.

• 한국재료학회지
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• 제25권12호
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• pp.683-689
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• 2015

In this study, the properties of Ag-coated $TiO_2$ nanoparticles were observed, while varying the molar ratio of water and $Ag^+$ for the surfactant and $TiO_2$. According to the XRD results, each nanoparticle showed a distinctive diffraction pattern. The intensity of the respective peaks and the sizes of the nanoparticles increased in the order of AT1($R_1=5$)(33.3 nm), AT2($R_1=10$)(38.1 nm), AT3($R_1=20$)(45.7 nm), AT4($R_1=40$)(48.6 nm) as well as AT5($R_2=0.2$, $R_3=0.5$)(41.4 nm), AT6($R_2=0.3$, $R_3=1$)(45.1 nm), AT7($R_2=0.5$, $R_3=1.5$)(49.3 nm), AT8($R_2=0.7$, $R_3=2$)(57.2 nm), which values were consistent with the results of the UV-Vis. spectrum. The surface resistance of the conductive pastes fabricated using the prepared Ag-coated $TiO_2$ nanoparticles exhibited a range 7.0~9.0($274{\sim}328{\mu}{\Omega}/cm^2$) times that of pure silver paste(ATP)($52{\mu}{\Omega}/cm^2$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• 한국분말재료학회지
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• 제24권6호
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• pp.464-471
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• 2017

A metal mesh TCE film is fabricated using a series of processes such as UV imprinting of a transparent trench pattern (with a width of $2-5{\mu}m$) onto a PET film, filling it with silver paste, wiping of the surface, and heat-curing the silver paste. In this work nanosized (40-50 nm) silver particles are synthesized and mixed with submicron (250-300 nm)-sized silver particles to prepare silver paste for the fabrication of metal mesh-type TCE films. The filling of these silver pastes into the patterned trench layer is examined using a specially designed filling machine and the rheological testing of the silver pastes. The wiping of the trench layer surface to remove any residual silver paste or particles is tested with various mixture solvents, and ethyl cellosolve acetate (ECA):DI water = 90:10 wt% is found to give the best result. The silver paste with 40-50 nm Ag:250-300 nm Ag in a 10:90 wt% mixture gives the highest electrical conductance. The metal mesh TCE film obtained with this silver paste in an optimized process exhibits a light transmittance of 90.4% and haze at 1.2%, which is suitable for TSP application.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.619-619
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• 2009

Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

• 소성∙가공
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• 제17권8호
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• pp.633-642
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• 2008

It's important to measure quantitative properties about thermal-nano behavior of polymer for producing high quality components using Nanoimprint lithography process. Nanoscale indents can be used to make the cells for molecular electronics and drug delivery, slots for integration into nanodevices, and defects for tailoring the structure and properties. In this study, formability of polymethylmetacrylate(PMMA) and polycarbonate(PC) were characterized Polymer has extreme variation in thermo mechanical variation during forming high temperature. Because of heating the polymer, it becomes softer than at room temperature. In this case it is particularly important to study high temperature-induced mechanical properties of polymer. Nanoindenter XP(MTS) was used to measure thermo mechanical properties of PMMA and PC. Polymer was heated by using the heating stage on NanoXP. At CSM(Continuous Stiffness Method) mode test, heating temperature was $110^{\circ}C,120^{\circ}C,130^{\circ}C,140^{\circ}C$ and $150^{\circ}C$ for PMMA, $140^{\circ}C,150^{\circ}C,160^{\circ}C,170^{\circ}C$ and $180^{\circ}C$ for PC, respectively. Maximum indentation depth was 2000nm. At basic mode test, heating temperature was $90^{\circ}C$ and $110^{\circ}C$ for PMMA, $140^{\circ}C,160^{\circ}C$ for PC. Maximum load was 10mN, 20mN and 40mN. Also indented pattern was observed by using SEM and AFM. Mechanical properties of PMMA and PC decreased when temperature increased. Decrease of mechanical properties from PMMA went down rapidly than that of PC.