• Ocean and Polar Research
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• v.39 no.4
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• pp.257-267
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• 2017

Although Pacific mackerel (Scomber japonicus) is an important commercial species in Korea, its recruitment mechanism remains largely unknown. Diel vertical positioning of larvae in the water column, which is affected by their specific gravity and the surrounding water density, may help to provide an understanding on recruitment success through predator avoidance and prey availability. The specific gravity measurement on Pacific mackerel eggs and larvae would seem to be essential information necessary to learn about the transport process from spawning to nursery grounds, and consequently the recruitment success. Eggs were artificially fertilized, and larvae were fed with rotifer when their mouths opened 3-4 days after hatching. We conducted the experiment using a density gradient water column to measure the ontogenetic changes in specific gravity from fertilization to 10 days after hatching. Egg specific gravity was stable during most of the embryonic period, but a sudden increase to $1.0249g\;cm^{-3}$ happened just before hatching. However, the specific gravity of newly hatched larvae was much lighter ($1.0195g\;cm^{-3}$), and specific gravity tended to increase continuously after hatching. Comparison of specific gravity with seawater density reveals that eggs and newly hatched larvae can float in the surface layer of the ocean. For the later period of the experiment, the specific gravity showed a cyclic diel pattern: the highest in the evening while the lowest at dawn. The fullness of larval stomach may be responsible for the observed differences in specific gravity, because stomach fullness was lower (40-60%) at midnight, and higher (80-85%) in evening. The diel pattern of specific gravity might provide clues regarding how larvae match the diel vertical migration of prey organisms.

• Korean Journal of Plant Resources
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• v.20 no.4
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• pp.321-324
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• 2007

This study was conducted to evaluate the effects of silicate fertilizer, soil addition and iron powder on yield and quality of rice. High density plot, cropping pattern of rice showed relatively superior values for all the yield components and yield with 83.2cm in culm length, 21.9cm in panicle length, 8.8 in number of panicles, 65.7% in percentage of productive tillers, 23.15g in weight of 1,000 grain of brown rice, 658.7kg/10a in rough rice yield and 544.7kg/10a in brown rice yield. The results indicate that plot of high density, cropping pattern shows different adaptabilities to a particular cropping pattern and high density plot seems to be the most suitable culture method of rice for high yielding.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.140.1-140.1
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• 2015

Currently, As Plasma application is expanded to the industrial and medical industrial, Low temperature plasma characteristics became important. Especially in Medical industrial, Low temperature plasma directly adapted to human skin, so their plasma parameter is important. One of the plasma parameters is electron density, some kinds of method to measuring electron density are Thomson scattering spectroscopy and Millimeter-wave transmission measurement. But most methods is expensive to composed of experiment system. Heterodyne interferometer system is cheap and simple to setting up, So we tried to measuring electron density by Laser heterodyne interferometer. To measuring electron density at atmospheric pressure, we need to obtain the phase shift signal. And we use a heterodyne interferometer. Our guiding laser is Helium-Neon laser which generated 632 nm laser. We set up to chopper which can make a laser signal like a pulse. Chopper can make a 4 kHz chopping. We used Needle jet as Ne plasma sources. Interference pattern is changed by refractive index of electron density. As this refractive index change, phase shift was occurred. Electron density is changed from Townsend discharge's electron bombardment, so we observed phenomena and calculated phase shift. Finally, we measured electron density by refractive index and electron density relationship. The calculated electron density value is approximately 1015~1016 cm-3. And we studied electron density value with voltage.

• ETRI Journal
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• v.25 no.3
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• pp.187-194
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• 2003

Delay testing has become an area of focus in the field of digital circuits as the speed and density of circuits have greatly improved. This paper proposes a new scan flip-flop and test algorithm to overcome some of the problems in delay testing. In the proposed test algorithm, the second test pattern is generated by scan justification, and the first test pattern is processed by functional justification. In the conventional functional justification, it is hard to generate the proper second test pattern because it uses a combinational circuit for the pattern. The proposed scan justification has the advantage of easily generating the second test pattern by direct justification from the scan. To implement our scheme, we devised a new scan in which the slave latch is bypassed by an additional latch to allow the slave to hold its state while a new pattern is scanned in. Experimental results on ISCAS'89 benchmark circuits show that the number of testable paths can be increased by about 45 % over the conventional functional justification.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.165-166
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• 2006

Surface pattern of tribological applications is an attractive technology of engineered surface. Therefore, friction reduction is considered to be necessary for improved efficiency of machines. This study investigated the effect of friction property fur angles of micro-scale crosshatch grooved surface pattern on bearing steel flat mated with pin-on-disk. We obtain sample which can be fabricated by photolithography process. We discuss friction property depend on an angle of cross-hatch grooved pattern. We can verify the lubrication mechanism as a Stribeck curve, which has a relationship between the friction coefficient and a dimensionless parameter under the lubrication condition. It was found that the friction coefficient was related to angle of crosshatch on surface, even when surface pattern was the same density.

• Design & Manufacturing
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• v.12 no.1
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• Journal of The Korean Association For Science Education
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• v.12 no.2
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• pp.31-42
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• 1992

The purposes of this study were to find out the degree of formation of the concept of density for the junior high students. The changing pattern of concept in acquiring the concept of density and the degree of development of INRC transformation ability related to the concept of density were also analyzed according to cognitive level and teaching method. The results of this study were as follows. 1) The experimental group were more effective than control group in the formation of the concept of density. 2) Even though students had been taught the concept of density, the various types of preconception were remained and persisted. Especially, the students at concrete level had persisted misconceptions and these misconceptions had been changed to the other misconceptions. 3) In the degree of the formation of the transformation ability of INRC group related to the concept of density in solid phase, the experimental group developed much better on both the abilities of Reciprocal transformation, Correlative transformation and the abilities to manipulate two variables such as volume and mass than control group. 4) The correlation coefficient between GALT score and achivement of the concept of density was 0.67. The correlation coefficient between achivement of the concept of density and the formation the transformation of INRC group related to the concept of density was 0.78.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.482-488
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• 2012

To fabricate a precise micro metal mold, the electrochemical etching process has been researched. We investigated the electrochemical etching process numerically and experimentally to determine the etching tendency of the process, focusing on the current density, which is a major parameter of the process. The finite element method, a kind of numerical analysis, was used to determine the current density distribution on the workpiece. Stainless steel(SS304) substrate with various sized square and circular array patterns as an anode and copper(Cu) plate as a cathode were used for the electrochemical experiments. A mixture of $H_2SO_4$, $H_3PO_4$, and DIW was used as an electrolyte. In this paper, comparison of the results from the experiment and the numerical simulation is presented, including the current density distribution and line profile from the simulation, and the etching profile and surface morphology from the experiment. Etching profile and surface morphology were characterized using a 3D-profiler and FE-SEM measurement. From a comparison of the data, it was confirmed that the current density distribution and the line profile of the simulation were similar to the surface morphology and the etching profile of the experiment, respectively. The current density is more concentrated at the vertex of the square pattern and circumference of the circular pattern. And, the depth of the etched area is proportional to the current density.