• Title/Summary/Keyword: Passivation Layer

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Study on Passive Layer Characteristics of Chemically Passivated Duplex Stainless Steel (화학적 부동태 처리에 따른 듀플렉스 스테인리스 강의 피막 특성에 관한 연구)

  • Jang, Heui-Un;Lee, Jung-Hoon;Kim, Yong-Hwan;Chung, Won-Sub
    • Journal of Surface Science and Engineering
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    • v.45 no.6
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    • pp.219-225
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    • 2012
  • The aim of the present study was to investigate the corrosion resistance and characteristics of passive layer between naturally passivated and chemically passivated duplex stainless steel, UNS S31803 (EN 1.4462) using CPT, XPS, and EIS. The treatment of $HNO_3$(II) and $HNO_3$(III) in ASTM A 967 was applied. In case of chemically passivated specimen, CPT of $HNO_3$(II) and $HNO_3$(III) were higher than that of naturally passivated specimen. In addition, from XPS results, the protectiveness index (Cr/(Fe+Cr)) of chemically passivated specimens was also higher than that of naturally passivated specimen. The reason for this result is considered due to post-cleaning treatment in chemical passivation process, that is, immersion in $Na_2Cr_3O_7$ solution. The fact that $HNO_3$(II) passivation treatment showed the highest film resistance and 'n', which is exponent related with constant phase element (CPE) of passivation film, was in good agreement with results of CPS and XPS. The chemical passivation treatment was an effective method to improve corrosion resistance of duplex stainless steel.

A Study on Radiation Hardening of a Infrared Detector (적외선 탐지소자의 내방사선화 연구)

  • Lee, Nam-Ho;Kim, Seung-Ho;Kim, Young-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.11
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    • pp.490-492
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    • 2005
  • A study on radiation hardening of infrared(IR) detector, the chief component of IR camera was performed. The radiation test on IR sensor passivated with the ZnS by Co$^{60}$ gamma-ray over 1 Mrads showed the reduction in Ro by 1/100 which was related to the noise level. This effect that was caused by carrier trapping in the ZnS passivation layer increased the leakage current and resulted in degradation in the device performance. For the radiation hardening of IR devices we suggested the ones with CdTe passivation layer which had a tendency to reluctant to carrier trapping in its layer and developed test patterns. Radiation test to the patterns showed that the our CdTe passivated device could survived over 1 Mrad gamma-ray dose.

The Effect of the Anti-corrosion by$CHF_3$ Treatment after Plasma Etching of Al Alloy Films (Al 합금막의 식각후 $CHF_3$ 처리에 의한 부식억제 효과)

  • 김창일;권광호;윤용선;백규하;남기수;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.517-521
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    • 1998
  • After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS(X-ray pheotoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, $CHF_3$ plasma treatment subsequent to the etch has been carried put. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after $CHF_3$ treatment, and the layer suppresses effectively the corrosion on the surface as the $CHF_3$treatment in the pressure of 300m Torr.

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Atmospheric Corrosion Process for Weathering Steel

  • Nagano, Hiroo;Yamashita, Masato
    • Corrosion Science and Technology
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    • v.7 no.2
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    • pp.119-124
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    • 2008
  • Steel is generally not corrosion resistant to water with formation of non protective rusts on its surface. Rusts are composed of iron oxides such as $Fe_3O_4$, $\alpha-$, $\beta-$, $\gamma-$and ${\delta}-FeOOH$. However, steel, particularly weathering steel containing small amounts of Cu, Ni and Cr etc., shows good corrosion resistance against rural, industrial or marine environment. Its corrosion rate is exceedingly small as compared with that of carbon steel. According to the exposure test results undertaken in outdoor environments, the atmospheric corrosion rate for weathering steel is only 1 mm for a century. Atmospheric corrosion for steels proceeds under alternate dry and wet conditions. Dry condition is encountered on steel surface on fine or cloudy days, and wet condition is on rainy or snowy days. The reason why weathering steel shows superior atmospheric corrosion resistance is due to formation of corrosion protective rusts on its surface under very thin water layer. The protective rusts are usually composed of two layer rusts; the upper layer is ${\gamma}-FeOOH$ termed as lepidocrocite, and inner layer is nano-particle ${\alpha}-FeOOH$ termed as goethite. This paper is aimed at elucidating the atmospheric corrosion mechanism for steel in comparison with corrosion in bulky water environment by use of empirical data.The summary is as follows: 1. No corrosion protective rusts are formed on steel in bulky water. 2. Atmospheric corrosion for steel is the corrosion under wetting and drying conditions. Corrosion and passivation occur alternately on steel surface. Steel, particularly weathering steel with small amounts of alloying elements such as Cu, Ni and Cr etc. enhances forming corrosion protective rusts by passivation.

Polishing Characteristics of passivation layer by abrasive particles and slurry chemical in the Metal CMP process (금속 CMP 공정에서 연마제와 슬러리 케미컬에 의한 passivation layer의 연마특성)

  • Park, Chang-Jun;Seo, Yong-Jin;Lee, Kyoung-Jin;Jeong, So-Young;Kim, Sang-Yong;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.45-48
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    • 2003
  • The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

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Review of the Silicon Oxide and Polysilicon Layer as the Passivated Contacts for TOPCon Solar Cells

  • Mengmeng Chu;Muhammad Quddamah Khokhar;Hasnain Yousuf;Xinyi Fan;Seungyong Han;Youngkuk Kim;Suresh Kumar Dhungel;Junsin Yi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.3
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    • pp.233-240
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    • 2023
  • p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiOx structure. It simultaneously achieves surface passivation and enhances the carriers' selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiOx layer achieves the highest implied open-circuit voltage (iVoc) is 750 mV, and the highest level of edge passivation is 40%. This review presents an overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiOx) and poly-silicon layer (poly-Si), as well as the advancement of the SiOx and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.

Development of OLED Passivation Method for High efficency and life time (고효율 및 장수명의 OLED Passivation 기술 개발)

  • Han, Jin-Woo;Kim, Jong-Hwan;Kim, Young-Hwan;Seo, Dae-Shik;Kim, Yong-Hoon;Moon, Dae-Gyu;Han, Jeong-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.267-268
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    • 2005
  • In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. In this investigation, the SiON and Polyimide(PI) layer showed the most suitable properties. Under these conditions, the WVTR(water vapour transition rate) for PET can be reduced from level of 0.57 g/$m^2$/day (bare subtrate) to $1{\times}10^{-5}$ /$m^2$/day after application of a SiON and Polyimide layer. These results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

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Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical (반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교)

  • Kim, Jae Eun;Lee, Kyung Dong;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.47-53
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    • 2016
  • Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

Characterization of Thin Film Passivation for OLED by PECVD (PECVD에 의한 OLED 소자의 Thin Film Passivation 특성)

  • Kim, KwanDo;Jang, SeokHee;Kim, JongMin;Chang, SangMok
    • Korean Chemical Engineering Research
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    • v.50 no.3
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    • pp.574-581
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    • 2012
  • The relatively short lifetime is a major obstruction for the commercial applications of OLED. One of the reason for the short lifetime is that the organic materials are interacted with water or oxygen in the atmosphere. Protection of water or oxygen from diffusing into the organic material layers are necessary to increase the lifetime of OLED. Although encapsulation of OLED with glass or metal cans has been established, passivation methods of OLED by organic/inorganic thin films are still being developed. In this paper we have developed in-situ passivation system and thin film passivation method using PECVD by which deposition can be performed at room temperature. We have analyzed the characteristics of the passivated OLED device also. The WVTR (Water Vapor Transmission Rate) for the inorganic thin film mono-layer can be reached down to $1{\times}10^{-2}g/m^2{\cdot}day$ and improved lifetime can be obtained. Thin film passivation methods are expected to be applied to flexible display.