• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

• 한국표면공학회지
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• 제45권6호
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• pp.219-225
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• 2012

The aim of the present study was to investigate the corrosion resistance and characteristics of passive layer between naturally passivated and chemically passivated duplex stainless steel, UNS S31803 (EN 1.4462) using CPT, XPS, and EIS. The treatment of $HNO_3$(II) and $HNO_3$(III) in ASTM A 967 was applied. In case of chemically passivated specimen, CPT of $HNO_3$(II) and $HNO_3$(III) were higher than that of naturally passivated specimen. In addition, from XPS results, the protectiveness index (Cr/(Fe+Cr)) of chemically passivated specimens was also higher than that of naturally passivated specimen. The reason for this result is considered due to post-cleaning treatment in chemical passivation process, that is, immersion in $Na_2Cr_3O_7$ solution. The fact that $HNO_3$(II) passivation treatment showed the highest film resistance and 'n', which is exponent related with constant phase element (CPE) of passivation film, was in good agreement with results of CPS and XPS. The chemical passivation treatment was an effective method to improve corrosion resistance of duplex stainless steel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.110.2-110.2
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• 2009

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.40-40
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• 1999

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.111-115
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• 2015

실리콘 태양전지의 효율을 향상하기 위해서는 소수 캐리어의 높은 수명이 필수조건이다. 따라서, 이를 달성하기 위한 실리콘 표면결함을 없애줄 수 있는 부동화(passivation) 기술이 매우 중요하다. 일반적으로 PECVD 법이나 열산화 공정을 통해 얻어진 $SiO_2$ 박막이 부동화 층으로 많이 사용되나 1000도에 이르는 고온 공정과 낮은 열적 안정성이 문제로 여겨진다. 본 연구에서는 원자층 증착법을 이용하여 400도 미만의 저온 공정을 통해 $Al_2O_3$ 부동화 박막을 형성하였다. $Al_2O_3$ 박막은 고유의 음의 고정 전하밀도로 인해 낮은 표면 재결합속도를 보이는 것으로 알려져 있다. 본 연구에서는 질소 도핑을 통해 높은 음의 고정 전하 밀도를 얻고 이를 통해 좀 더 향상된 실리콘 표면 부동화 특성을 얻고자 하였다.

• 대한전자공학회논문지SD
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• 제39권1호
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• pp.25-30
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• 2002

본 논문에서는 PECVD 장비를 이용하여 PHEMT 소자의 passivation 막으로 사용되는 Si₃N₄박막의 특성을 최적화하고, 0.25 ㎛급 PHEMT 제작에 적용하였다. 제작된 PHEMT(60 ㎛×2 fingers)의 소자 특성을 측정한 결과, passivation 후 드레인 포화전류와 최대 전달 컨덕턴스는 passivation 전보다 각각 2.7% 와 3%씩 증가하였으며, 전류이득 차단 주파수는 53 ㎓, 최대 공진 주파수는 105 ㎓ 였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1443-1445
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• 1996

Hydrogen passivation enhances the electrical characteristics of poly-Si TFT(Thin Film Transistor). However, the weak Si-H bonds, generated during hydrogenation, degrade the stability of the device. So, we carried out the passivation treatment with $NH_3$ or $N_2$. We compared the effect of $NH_3$ or $N_2$ passivation treatments with that of hydrogenation in terms of stability. Through the $NH_3$ passivation treatment, we obtained the most improved subthreshold swing of 1.2V/decade from the initial subthreshold swing of 1.56V/decade. When electrical stress was given, the $NH_3$ passivated devices showed best electrical stability.

• 대한화학회지
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• 제57권5호
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• pp.533-539
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• 2013

변전위법과 전기화학 임피던스 측정법을 이용하여 borate 완충용액에서 니켈 회전원판전극의 전기화학적 부식과 부동화를 연구하였다. Tafel 기울기, 임피던스, 회전원판전극의 회전속도, 그리고 부식전위와 부식전류의 pH 의존성으로부터 니켈의 부식과 부동화 반응 메커니즘과 환원반응에서의 수소 발생 반응구조를 제안하였다. EIS data로부터 등가회로를 제안하였으며 산화반응의 영역별로 전기화학적 변수들을 측정하였다. 부동화 반응에 의하여 생성된 $Ni(OH)_2$ 산화피막은 전기장의 영향을 받는 탈수반응에 의해 NiO로 전환되는 것으로 보인다.

• 한국재료학회지
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• 제30권5호
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.456-459
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• 2004

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater