• 마이크로전자및패키징학회지
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• 제31권2호
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• pp.1-8
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• 2024

Bonding wires are composed of conductive metals of Au, Ag & Cu with excellent electrical conductivities for transmitting power and signals to wafer chips. Wire metals do not provide electrical insulation, adhesion promoter and corrosion passivation. Adhesion between metal wires is extremely weak, which is responsible for wire cut failures during thermal cycling. Organic coating for electrical insulation does not satisfy bondability and manufacturability, and it is complex to apply very thin organic coating on metal wires. Automotive packages require enhanced reliability of packages under harsh conditions. LED and power packages are susceptible to wire cut failures. Contrary to conventional OCB behaviors, forming gas was not required for free air ball formation for both Ag and Pd-coated Cu wires with Al₂O₃ passivation.

• 한국분말재료학회지
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• 제9권2호
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• pp.124-132
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• 2002

Nano Cu powders, synthesized by Pulsed Wire Evaporation (PWE) method, have been compacted by Magnetic Pulsed Cojpaction(MPC) method. The microstructure and mechanical properties were analyzed. The optimal condition for proper mechanical properties with nanostructure was found. Both pure nano Cu powders and passivated nano Cu powders were compacted, and the effect of passivated layer on the mechanical properties was investigated. The compacts by MPC, which had ultra-fine and uniform nanostructure, showed higher density of 95% of theoretical density than that of static compaction. The pur and passivated Cu compacted at $300^{\circ}C$ exhibited maximum hardnesses of 248 and 260 Hv, respectively. The wear resistance of those compacts corresponded to the hardness.

• 한국재료학회지
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• 제12권2호
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• pp.103-111
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• 2002

The thermally insulated underground pipelines have been used for district heating system. The sensor wire embedded in the insulation was used for monitoring the insulating resistance between the sensor wire and the pipe. The resistance measurement system detects corrosion of steel pipe under insulation. The corrosion and stress corrosion cracking(SCC) characteristics of sensor wire in synthetic ground water were investigated using the electrochemical methods and constant load SCC tests. The polarization tests were used to study the electrochemical behavior of sensor wire. The sensor wire was passivated at temperatures ranging from 25 to $95^{\circ}C$. However, the applied sensing current larger than passive current resulted in breakdown of passive film. The constant load SCC tests were performed to investigate the effects of applied current and load on the fracture behavior. Stress-corrosion cracks initiated at pits that were produced by sensing current. The growth of the pit involves a tunnelling mechanism, which leads to ductile fracture.

• 한국재료학회지
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• 제12권12호
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• pp.941-946
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• 2002

Both Cu and Cu-oxide nanopowders have great potential as conductive paste, solid lubricant, effective catalysts and super conducting materials because of their unique properties compared with those of commercial micro-sized ones. In this study, Cu and Cu-oxide nanopowders were prepared by Pulsed Wire Evaporation (PWE) method which has been very useful for producing nanometer-sized metal, alloy and ceramic powders. In this process, the metal wire is explosively converted into ultrafine particles under high electric pulse current (between $10^4$ and $10^{ 6}$ $A/mm^2$) within a micro second time. To prevent full oxidations of Cu powder, the surface of powder has been slightly passivated with thin CuO layer. X-ray diffraction analysis has shown that pure Cu nanopowders were obtained at $N_2$ atmosphere. As the oxygen partial pressure increased in $N_2$ atmosphere, the gradual phase transformation occurred from Cu to $Cu_2$O and finally CuO nanopowders. The spherical Cu nanopowders had a uniform size distribution of about 100nm in diameter. The Cu-oxide nanopowders were less than 70nm with sphere-like shape and their mean particle size was 54nm. Smaller size of Cu-oxide nanopowders compared with that of the Cu nanopowders results from the secondary explosion of Cu nanopowders at oxygen atmosphere. Thin passivated oxygen layer on the Cu surface has been proved by XPS and HRPD.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.172-175
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• 2009

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

• 한국분말재료학회지
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• 제9권6호
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• pp.433-440
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• 2002

Synthesis and compaction of Al-base nano powders by pulsed discharge method were investigated. The aluminum based powders with 50 to 200 nm of diameter were produced by pulsed wire evaporation method. The powders were covered with very thin oxide layer. The perspective process for the compaction and sintering of nanostructured metal-based materials stable in a wide temperature range can be seen in the densification of nano-sized metal powders with uniformly distributed hard ceramic particles. The promising approach lies in utilization of natural uniform mixtures of metal and ceramic phases, e.g. partially oxidized metal powders as fabricated in our synthesis method. Their particles consist of metal grains coated with oxide films. To construct a metal-matrix material from such powder, it is necessary to destroy the hard oxide coatings of particles during the compaction process. This goal was realized in our experiments with intensive magnetic pulsed compaction of aluminum nanopowders passivated in air.

• 한국분말재료학회지
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• 제16권4호
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• pp.243-248
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• 2009

Carbon-coated Cu nanopowders with core/shell structure have been successfully fabricated by pulsed wire evaporation (PWE) method, in which a mixed gas of Ar/$CH_4$ (10 vol.%) was used as an ambient gas. The characterization of the samples was carried out using x-ray diffraction (XRD), scanning electron microscope (SEM), and high resolution transmission electron microscope (HRTEM). It was found that the nanoparticles show a spherical morphology with the size ranging of 10-40 nm and are covered with graphite layers of 2-4 nm. When oxygen-passivated Cu nanopowders were annealed under flowing argon gas (600 and 800$^{\circ}C$), the crystallinity of $Cu_2O$ phase and the particle size gradually increased. On the other hand, carbon-coated Cu nanopowders remained similar to as-prepared case with no additional oxide or carbide phases even after the annealing, indicating that the metal nanoparticles are well protected by the carbon-coating layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1092-1095
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• 2001

Steady state thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin with a thickness of 25${\mu}$m. It was assumed that the generated heat which is mainly by the on-state voltage drop, 9V for 12kV diode, is dissipated by way of the conduction through diodes layers to bonding wire and of the convection at the surface of passivating resin. It was predicted by the thermal analysis that the temperature rise of a pn junction of the 12kV diode can reach at the range of 16∼34$^{\circ}C$ under the given boundary conditions. The thickness and thermal conductivity(0.3∼3W/m-K) of the passivating resin did little effect to lower thermal resistance of the diode. As the length of the bonding wire increased, which means the distance of heat conduction path became longer, the thermal resistance increased considerably. The thermal analysis results imply that the generated heat of the diode is dissipated mainly by the conduction through the route of diode-dummy wafer-bonding wire, which suggests to minimize the length of the wire for the lowest thermal resistance.

• Advances in nano research
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• 제2권3호
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of $25{\mu}m$ and $3700{\mu}m$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.