• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.496-496
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• 2012

Sputtering은 박막의 품질(부착력, 밀도, 균일도등)이 우수하고 대면적 증착이 용이하여 반도체, 디스플레이, MEMS기술등과 같은 첨단산업에서 널리 이용되고 있는 증착방법이다. 일반적인 평판형 스퍼터건은 전계와 자계가 직교하는 Target의 일부영역에서만 스퍼터링 현상이 발생하게 되어 증착물질의 사용효율이 20~30% 정도로 좋지 못하고 스퍼터링 되지않는 부분에서는 재증착 현상에 의한 파티클 발생을 유발하여 Substrate에 손상을 입혀 박막의 질을 떨어뜨리게 된다. 본 연구에서는 이러한 문제점들의 물리적 현상의 진단 및 최적화를 위해 Particle-In-Cell (PIC)시뮬레이션을 이용하여 그 특성들을 알아보았다. 인가전압, 압력, 증착물질과 기판사이의 거리를 변화시켜 자기장이 포함된 Paschen curve를 그렸다. 전기장만이 포함된 시스템에서의 Paschen curve는 이미 공식으로 알려져 있으며 마그네트론 스퍼터링의 시스템에서 Paschen curve와 비교하여 보다 낮은 압력에서 플라즈마가 형성할 수 있는 것을 확인하였다. 또한 Target에 충돌하는 아르곤이온의 양, 에너지 분포, 각도의 분포 등을 관찰하였는데, 대부분의 아르곤이온은 압력이 증가할수록 에너지가 큰 경향성을 가지며 입사각도는 Target에 보다 수직으로 충돌하는 경향을 볼 수 있었다. 증착물질과 기판사이의 거리의 변화에 대해서는 이온 특성의 변화는 없었다.

• 전기의세계
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• 제23권4호
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• pp.46-52
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• 1974

Generally, it has been regarded that there are two kinds of the effect of the electrodes, especially of the cathode in the gas discharge, (a) the effect caused by the difference of the cathode meterial and (b) the effect by the change of the cathode surface state even in the same meterials. Thus the two effects must be investigated independently to study the roles of the cathode in gas discharges. This paper measured sparking voltage in Rare gas (Ar, He) for the change of sparking voltage in repeating sparks and for the effect of (a) and (b) mentioned above, under the condition that the desorption of impurities from the cathod can be nigligible, and it is obtained that the correlative relations of the work function, sparking voltage and secondary coefficient are comparatively simple. In addition, the interesting character of the minimum point of the paschen's curves is found. The results were as follows; 1) The value of (pd)min with minimum pint of sparking voltage, (Vs)min, is 0.7-0.9 Torr. cm in Argon, but is 5.6-7.1 Torr. cm in Helium, and Paschen's curve in Helium shows slow curve than in Argon. 2) The minimum point of the Paschen's curve is satisfied actually Townsend's self sustaining criterion in Argon, but non-satisfaction in Helium, and the Townsend's secondary coefficient .gamma. action have compound property (.gamma.$_{i}$, .gamma.$_{p}$, .gamma.$_{m}$) in Helium. 3) The dependenting character of work function in Helium is less than in Argon. 4) The minimum point of sparking voltage increase under oxidized electrode than clear electrode in Au and Ag, but minimum point decrease in Ni and Cu.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.157-160
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• 1990

A dot matrix type DC Plasma Display Panel was fabricated and it's characteristics was investigated. Paschen curve and I-V curve of various gas mixture was given. Optimal gas mixing ratio, pressure and operating point was determined. The priming effect was observed and discharge delay time was measured with varing applied voltage, priming current, priming distance, duty ratio.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.902-907
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• 2003

In this paper, the ITO thin film, which is considered as one of the most currently used material for the high performance transparent conducting films for the PDP cell, was made in a parallel-plate, capacitively coupled DC magnetron sputtering system. Some electrical and optical properties of ITO films were investigated and discussed on the basis of glow discharge characteristics. The optimized thin film fabricating conditions of Ar gas pressure and substrate temperature were derived from the Paschen curve and glow discharge characteristics. The maximum transmittance of 89.61 % in the visible region and optical band gap of 3.89 eV and resistivity of 1.67${\times}$10$\^$-3/ $\Omega$-cm were obtained under the conditions of 300 C of substrate temperature and 10∼15 mtorr of pressure, which corresponds nearly to that of Paschen minimum.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 춘계학술대회 논문집
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• pp.372-375
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• 2009

We have studied on plasma diagnosis, characteristics of the glow discharge at the several different conditions of pressure, discharge current and such. The discharge onset voltage and onset current decreased as pressure increase, the general trend was nearly in agreement with the left regions of Paschen's curve. As normal glow discharge, discharge voltage was constant according to discharge current.

• 한국진공학회지
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• 제17권5호
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• pp.408-418
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• 2008

본 논문에서는 집속이온빔의 플라즈마원을 위한 간단한 직육면체형태의 공진 공동을 설계하고 특성연구를 수행하였다. 공진에 최적인 공동 구조는 HFSS(High Frequency Structure Simulator)를 이용한 전기장 분포를 통해 구체적으로 계산하였다. 공진 공동은 내부 석영관 및 플라즈마 등의 유전체의 영향을 받기 때문에 공동의 한축 길이를 변화시킬 수 있는 구조로 설계되었다. 실험적으로 관찰되는 마이크로웨이브 방전시작전압을 통해 방전에 최적인 공동 길이를 측정하여 HFSS 계산된 값과 비교하였다. 공동은 석영관으로 인한 내부 유효유전율의 변화에 의해 석영관을 고려하지 않았던 길이에 비해 10cm가 감소된 길이에서 최적화됨을 공통적으로 확인할 수 있었다. 또한 압력변화에 따른 방전시작전압은 Paschen Curve와 유사한 결과를 나타내었다. 방전이 발생한 후에는 입력전력에 따라 플라즈마 밀도가 증가하였고 플라즈마의 영향으로 감소한 유효유전율에 의해 10cm가 증가한 길이에서 최적화가 되었다. 하지만 300W이상의 높은 입력 전력에서는 마이크로웨이브가 투과할 수 없는 고밀도 플라즈마 경계층(cut off layer)이 확장하여 더 이상 공동길이 조절을 통한 공동 최적화가 불가능함을 확인하였다. 따라서 고밀도 플라즈마를 만들기 위한 마이크로웨이브 공동의 정확한 설계를 위해 마이크로웨이브가 통과할 수 없는 고밀도 플라즈마 영역을 도체로 가정하고 그 외의 저밀도 플라즈마 영역을 밀도에 고유한 특정 유전율을 가지는 유전체로 설정하여 공동 내부의 전기장 분포를 해석하는 과정이 꼭 필요하다.

• 전기의세계
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• 제28권1호
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• pp.73-82
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• 1979

There are a great number of papers on the Townsend discharge in gases, and many of them are concerned with the effect of the cathode. It has been regarded that there are two kinds of effect of the electrodes, especially of the cathode; (a) the effect caused by the difference of the cathode material and (b) the effect by the change of the cathode surface state even in the same material. Both of them may change the secondary coefficient following after the change of the work function, and the atter may further change the primary ionization coefficient as foreign atoms on the surface may be dseorbed in sparks to decrease the purity of the gas. Thus the two effects must be investigated independently to study the roles of the cathode in gas discharges. In this report the effect of the cathode material on the sparking voltage is described. The experiment is also carried out under the condition that the desorption of impurities from the cathode be negligible. From these the new correlativity between the work function of the cathode and the sparking voltage is obtained. In addition, the interesting character of the minimum point of the Paschen's curve can be found.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.330-331
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• 2006

Recently, plasma display panels (PDPs) are highlighted for the flat type display device. Therefore, much attention has been paid to secondary electron emission coefficient of the electrode protective material of PDPs. As PDPs is developing, the concern about secondary electron emission coefficient ($\gamma$) which is related with PDPs electrode protection material is increasing continually. So the concern about the way to how to measure secondary electron emission coefficient is on the rise. At present, the way to how to measure secondary electron emission coefficient is developed by some research groups, which is giving some research part's advance help. In this research, we have studied how to measure secondary electron emission coefficient which is related with various thin films more conveniently than previous measurement method. We studied the method of measurement of secondary electron emission coefficient (${\gamma}$) of amorphous silicon films by using Paschen's curve.

• 천문학회보
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• 제39권2호
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• pp.76.1-76.1
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• 2014

We present near-infrared spectroscopic and photometric observations of the nova V2468 Cyg taken from 2008 March 14 till 2008 November 11 following its outburst on 2008 March 7. The JHK spectra of the nova have been taken from the Mount Abu Infrared Observatory using the Near-Infrared Imager/Spectrometer. The early spectra are dominated by strong H I lines from the Brackett and Paschen series, Fe II, O I and C I lines, typical of Fe II type novae but after 46 days from outburst there is significant reduction in the strength of the C I lines and the spectra are dominated by He I lines. The FWHM of the Pa-beta and Br-gamma lines change from 2200-2300 km s-1 to 1700-1800 km s-1 after 12 days from outburst. Three additional small amplitude outbursts are seen near 110, 185 and 240 days in the V band light curve after the discovery. The upper limit for the ejecta mass for V2468 Cyg is estimated to be $5.2{\times}10-6Msun$.