• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.7
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• pp.227-233
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• 1983

Noticing that action of gaseous phase in insulating oil concerns to the discharging characteristics, I investigated the smalness pressure effects on quantity of the partial discharge and discharging pulse frequency. Tests are carried out between the niddle points in insulating oil at pressure being changed by gradual charge of inert gas Ar. At pressure as low as of 0.1-0.5 torr pulse frequency and maximum partial discharge reach peak while at pressure haigher than 20 torr no pulse is observed. The fact that pulse frequency has peak value at certain presure, which is changed either by charging Ar or by adding oil, implies that the action of gaseous phase depends on pressure. Test results are that partial discharge pulse are governed by pressure of Ar-charged oil, and less partial discharge pulses correspond to smaller bubbles whereas more partial descharge pulses correspond to larger bubbles.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.23-26
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• 2007

The influence of water partial pressure in Metal-organic Deposition (MOD) method was investigated on the texture and the morphology of $YBa_2Cu_3O_{7-x}$ (YBCO) films grown on the buffered metal tapes. The water partial pressure was varied from 4.2% up to 10.0% with the other process variables, such as annealing temperature and oxygen partial pressure, kept constant. In this work, the fluorine-free Y & Cu precursor solution added with Sm was synthesized and coated by the continuous slot-die coating & calcination step. The next annealing step of the YBCO films was done by the reel-to-reel method with the gas flowed vertically down. From the x-ray diffraction analysis, the un-reacted phase like $BaF_2$ peak was found at the water partial pressure of 4.2%, but $BaF_2$ peak intensity is much reduced as the water partial pressure is increased. However, the higher water partial pressure of about 10% in this experiment leads to the poor crystallinity of YBCO films. The morphologies of the YBCO films were not different from each other when the water partial pressure was varied in this work. The maximum critical current density of 3.8MA/$cm^2$ was obtained at the water partial pressure of 6.2% with the annealing temperature of 780$^{\circ}C$ and oxygen partial pressure of 500ppm.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• Journal of the Korean Society of Safety
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• v.14 no.4
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• pp.100-107
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• 1999

The purpose of the study is to investigate the effect of H$_2$ pressure on partial discharge (PD) activity and aging rate in turbine generator winding insulations. A series of field tests and laboratory tests were peformed to investigate the effect of $H_2$ pressure on PD activity. Field tests were conducted at two unit turbine generators in two conditions, in $H_2$ pressure and in air atmosphere. Obtained results are as follows ; 1) ${\Delta}tan{\delta}$ and maximum partial discharge are reduced with increase of $H_2$ pressure and partial discharge inception voltage. 2) The reduction ratio of ${\Delta}tan{\delta}$ due to $H_2$ pressure is higher than one of PD magnitude. 3) Partial discharge pulses suffer from attenuation and distortion when transmitted along windings, because of the complex L-C network between windings. From the result, partial discharge pulses are subjected to resonance phenomena in a generator winding.

• Journal of the Korean Ceramic Society
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• v.21 no.1
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• pp.51-59
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• 1984

In this paper mechanical properties of reaction-bonded silicon nitride are studied with the variation of initial nitrogen partial pressure. At 1, 25$0^{\circ}C$ the amount of nitridation and the nucleation of nitride increase linearly with the nitrogen partial pressure increase. After the nitridation is completed the density of nitride and modulus of rupture at room temperature are increased with the amount of nitridation. When the partial pressure of nitrogen is 0.5 atm the specimen show the optimum properties that is the highest density of nitride and modulus of rupture. Also the microstructure of $\alpha$-matte is deveoped very well at that pressure of nitrogen which contributes to the strength development of specimen. It is shown that with proper control of initial partial pressure of nitrogen high strength silicon nitride body can be manufactured for dynamic applications.

• Progress in Superconductivity
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• v.10 no.2
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• pp.133-138
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• 2009

The $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$(Nd123) superconductor exhibits high performance in high magnetic field and high temperature. We have studied phase stability for Nd123 under reduced oxygen partial pressure and various heat-treatment conditions. The main phase is Nd123 and some samples contain small amounts of Nd422 depending on the temperature and oxygen partial pressure. The decomposition temperature decreases with decreasing oxygen partial pressure from $1052^{\circ}C(P(O_2)$=150 Torr) to about $845^{\circ}C(P(O_2)$=0.1 Torr). The liquidus line was steeper temperature with decreasing oxygen partial pressure. In same condition of oxygen partial pressure, the region of stable Nd123 phase was formed at slightly higher temperature than the region of stable YBCO phase.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.437-440
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• 1998

We studied phosphorus doping effect on the epitaxial growth of $Si_{1-x}Ge_{x}$ film with high Ge fraction on Si substates at 550.deg. C by LPCVD. In a low $Ph_{3}$ partial pressure region such as below 1.25 mPa, the phosphorus dopant concentration increased linearly with increasing $PH_{3}$ partial pressure while the deposition rate and the Ge fraction were constant. In a higher $PH_{3}$ partial pressure region, the phosphorus dopant concentration and the deposition rate decreased, while the Ge fraction slightly increased. The deposition arate and the Ge fraction increased with increasing $GeH_{4}$ partial pressure while the phophours dopant concentration decreased. But the increasing rate of Ge fraction with incrasing $PH_{3}$ partial pressure was reduced at a high $GeH_{4}$ partial pressure. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_{4}$ adsorption/reasction and the $GeH_{4}$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_{4}$ than on $GeH_{4}$. In a higher $PH_{3}$ partial pressure region, the epitaxial growth is largely controlled by surface coverage effect of phosphorus atoms. The phosphorus surface coverage was slimited at a high $GeH_{4}$ partial pressure because adsorbed Ge atoms effectively suppresses the adsorption of phosphorus atoms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.846-851
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• 2004

Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.841-850
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• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.