• Journal of Advanced Navigation Technology
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• v.15 no.4
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• pp.596-601
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• 2011

This paper has presented research results for the switching mode class E frequency multiplier that has simple circuit structure and high efficiency. Frequency multiplication is coming from the nonlinearity of the active component, and this paper models the FET active component as a simple switch and some parasitics to analyze the characteristics. The matching component parameters for the class E frequency doubler have been derived with modeling the FET as a input controlled switch and some parasitics. A circuit simulator, ADS, is used to simulate the output voltage and current waveform and efficiency with the variation of the parasitic values. With 2.9GHz input and 2V bias, the drain efficiency has been decreased from 98% to 28% with changing the parasitic capacitance from 0pF to 1pF at 5.8GHz output, which shows that the parasitic capacitance CP has the most significant effect on the efficiency among the parasitics of FET.

• ETRI Journal
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• v.15 no.3
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.367-372
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• 1999

In this paper, an inverter fed induction motor drive system is analyed in order to predict the conducted interference. High frequency model for inverter, motor and system parasitic components are proposed. High frequency component allows time and frequency domain analysis to be performed with standard PSpice tool. The overall high frequency component and model are verified by comparing simulation and experimental result.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1664-1671
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• 2016

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

• Journal of Power Electronics
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• v.19 no.2
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• pp.591-601
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• 2019

With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.5
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• pp.359-366
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• 2008

A two-dimensional thermal model of proton exchange membrane fuel cell with large active area is developed to investigate the performance of fuel cell with large active area over various thermal management conditions. The core sub-models of the two-dimensional thermal model are one-dimensional agglomerate structure electrochemical reaction model, one-dimensional water transport model, and a two-dimensional heat transfer model. Prior to carrying out the simulation, this study is contributed to set up the operating temperature of the fuel cell with large active area which is a maximum temperature inside the fuel cell considering durability of membrane electrolyte. The simulation results show that the operating temperature of the fuel cell and temperature distribution inside the fuel cell can affect significantly the total net power at extreme conditions. Results also show that the parasitic losses of balance of plant component should be precisely controlled to produce the maximum system power with minimum parasitic loss of thermal management system.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.2
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• pp.85-91
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• 2016

The Positive Temperature Coefficient (PTC) is used for cabin air heating of a battery electric vehicle, which is different from conventional vehicles. Since the PTC heater consumes a large quantity of power in a parasitic manner, many valuable studies have been reported in the field of alternative heat pumps. In this study, a model for an R134a heat pump taking into account the thermal environment of the cabin was developed for a MATLAB/SIMULINK(R) platform. Component and cabin models are validated with reference values. Results show that the heat pump is more competitive for parasitic power consumption over all ambient temperature conditions. Additionally, the method of waste heat recovery to overcome disadvantages when temperatures are below zero is applied to efficiently operate the heat pump.