• Nuclear Engineering and Technology
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• v.53 no.11
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• pp.3643-3652
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• 2021

Sizing the tube inlet orifice of a Once-Through Steam Generator (OTSG) is important to protect the integrity of the tubes from thermal cycling and vibration wear. In this study, a new sizing criterion is proposed for the tube inlet orifice to suppress the parallel channel instability in an OTSG. A perturbation method is used to capture the essential parts of the thermal-hydraulic phenomena of the parallel channel instability. The perturbation model of the heat transfer regime boundaries is identified as a missing part in existing models for sizing the OTSG tube inlet orifice. Limitations and deficiency of the existing models are identified and the reasons for the limitations are explained. The newly proposed model can be utilized to size the tube inlet orifice to suppress the parallel channel instability without excessive engineering margin.

• Advances in aircraft and spacecraft science
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• v.6 no.1
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• pp.19-30
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• 2019

Two- and three-dimensional turbulent airflows in a 9-degrees-bent channel are studied numerically. The inner surfaces of upper and lower walls are parallel to each other upstream and downstream of the bend section. The free stream is supersonic, whereas the flow at the channel exit is either supersonic or subsonic depending on the given backpressure. Solutions of the Reynolds-averaged Navier-Stokes equations are obtained with a finite-volume solver ANSYS CFX. The solutions reveal instability of formed shock waves and a flow hysteresis in considerable bands of the free-stream Mach number at zero and negative angles of attack. The instability is caused by an interaction of shocks with the expansion flow formed over the convex bend of lower wall.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.2
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• pp.187-196
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• 2013

A numerical model was developed to predict the density wave oscillation (DWO) in the furnace wall tubes of a fossil-fired once-through boiler. The transient flow fields in the tubes were obtained using a 1D finite volume method in the time domain. A header model was also implemented to simulate the parallel tube connection of the wall tubes. The inlet and outlet mass flow variation in one of the parallel tubes was examined after a heat perturbation to find the DWO. After successful verification with experimental results reported in literature, the developed model was applied to the wall tubes of a 700-MW boiler furnace. In contrast to the simulation of Takitani's experiment, in which the unstable power thresholds tended to rise in the reduced bypass channel flow, no remarkable changes were observed in the power thresholds in the parallel channel modeling of the wall tubes of the boiler furnace.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.