• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.215-219
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• 2020

After the specimen of A-site defect double Perovskite La1/3TaO3 single crystal was manufactured, the dielectric properties have been studied between the temperature range of 10 and 800 K. Under 500 K, a paraelectric behavior has been shown, and above 550 K, a dielectric anomaly and a thermal history of dielectric constant has been shown. An activation energy by measurement of ac-conductivity has been the largest with 1.83 eV in the areas below 560 K, 0.35 eV in the areas of 560~690 K, and 0.28 eV in the areas of high temperature above 690 K. From these results, it is assumed that in the areas below 500 K, La3+-ion and vacancy-site are arranged in disorder to maintain a paraelectric phase. And in the areas near 560 K with the highest activation energy, a dielectric anomaly is attributes to rearrangement of La3+-ion due to conduction to vacancy-site or jumping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.841-848
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• 1994

The sintering behavior of La-modified PbTiO3 ceramics was investigated in order to improve the poor sinterability of PbTiO3. Addition of La improved the sinterability. It was confirmed that this improvement was due to the decrease in tetragonality ratio c/a of crystal lattice. The variations of dielectric constant and pyroelectric coefficient were measured with temperature. It was observed that with the increase of La content, Curie temperature decreased and dielectric constant at room temperature increased. La-modified PbTiO3 ceramics had smaller pyroelectric figure of merits than those of pyroelectric materials in use. The effects of grain size on dielectric and pyroelectric properties were also investigated. The change of grain size had effect on maximum dielectric constant and pyroelectric coefficient, but is had little effect on pyroelectric figure of merit at room temperature. The closer examination near ferro-paraelectric phase transition temperature revealed that the behavior of phase transition approached a more relaxor character with the increase of La content and the decrease of grain size.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.512-520
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• 1998

PLZT(7.5/70/30) was initially a cubic phase having diffuse phase transition at high temperatures. Sn-sub-stitution for PLZT(7.5/70/30) underwent an irreversible phase transition from cubic to rhom-bohedral structure. However PLZTS(7.5/70/30/y=5 & 10) could be reversibly switched from paraelectric to ferroelectric phase under electric field without showing a significant change in crystal structure. With in-creasing the amount of Sn-substitution the P-E behaviors of the PLZTS became more antiferroelectric which was similar to the effect of La-substitution of PLZT. Our study may suggest that Sn-substitution ef-fectively weakens a formation of long-range order between polar Ti-or Zr- containing octahedra which greatly affects strain properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.48-51
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• 1997

(Pb. La)TiO$_3$ thin films were fabricated by sol-gel Processing and spin-coated on the Pt substrate. The spin-coated PLT films were sintered at 75$0^{\circ}C$ for 5min by rapid thermal ann La content dependence of the electrical properties of the PLT thin films are discussed. Wit La mole% from 20 to 36mo1e%. the dielectric constant of the PLT thin films decreased f 570. P-E hysteresis loops changed from ferroelectric to paraelectric. and the charge storage charging time decreased. The Curie Point decreased with increasing La content. The leak density also decreased and La 36mo1% species shows mood characteristics less than 10- electric field 500 (KV/cm) Because of the broad range of composition-controlled ferroelectric PLT thin films are suitable for memory application.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.29-32
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• 2016

Using the various exchange-correlation functionals, such as LDA, GGA-PBE, GGA-PBEsol and GGA-AM05 functionals, first principle studies were conducted to determine the structures of paraelectric and ferroelectric PbTiO₃. Based on the structures determined by the various functionals, the piezoelectric properties of PbTiO₃ are predicted under the density-functional perturbation theory (DFPT). The present prediction with the various GGA functionals are closer to the experimental findings compared to the LDA values. The present DFT calculations using the GGA-PBEsol functional estimate the experimental data more reasonably than the conventional LDA and GGA fucntionals. The GGA-AM05 functional also predicts the experimental data as well as the GGA-PBEsol. The piezoelectric tensor calculated with PBEsol is relatively insensitive to pressure.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1178-1188
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• 1995

Bi4Ti3O12 (BIT) and its rare earth (Y, Nd, Sm, Gd)-substituted derivatives were synthesized using a sol-gel method to investigate their microstructures, cystal structures and electrical properties depending on the subsituted elemetns. Nd- or Sm-substitution into BIT appeared to be favorable, while Y- or Gd-substitution occurred with a pyrochlore phase. This suggests that a smaller trivalent rare earth ion may not be favorable in the structure of BIT. The rare earth derivatives showed that their particle sizes and shapes were considerably different depending on the kinds of substituted elements. Y-substitution resulted in developing a relatively even particle size and a dense microstructure. In structure, they may be similar to the pseudo-orthorhombic BIT but close to a paraelectric tetragonal phase. Their a (or b) axes were shortened, compared to the one of BIT. Such a distortion may result a decrease in the tilting of TiO6. BIT and the derivatives showed that their dielectric constants and losses were 40~120 and less than 0.03, respectively in the frequency range of 1~10 MHz. The dielectric loss of Y-substituted derivative was the lowest one and changed a little to frequency. Curie points were observed in all the derivatives like BIT to suggest that they would be ferroelectric. The temperature stability of the delectric properties of the derivatives below the Curie points were relatively better than the one of BIT.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.3-4
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• 2006

${Li_2}{CO_3}$ and MgO doped paraelectric ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$, materials were prepared and compared for LTCC applications. In these days LTCC (Low Temperature Co-fired Ceramics) technology has been widely employed for electronic modules for the communication systems such as front-end modules, antenna modules, and switching modules. In this paper, 1 ${\sim}$ 5 wt % of ${Li_2}{CO_3}$, and 30 wt % of MgO were added to ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$, respectively. The crystalline properties and electrical properties will be compared and discussed.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.130-133
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• 1999

Paraelectric ZrTiO4 thin films were synthesized on a Si(100) substrate using DC magnetron reactive sputtering. Films deposited above-400$^{\circ}C$ exhibited crystalline characteristics. The dielectric constants ($\varepsilon$) and dielectric losses (tan$\delta$) of as-deposited and annealed films were measured in the 1 MHz range using a Pt upper electrode and a phosphorous-doped si bottom electrode. Preliminary data showed that as the deposition temperature increased, the dielectric losses decreased while the dielectric constants did not change significantly. similar trends for dielectric losses were observed when the as-deposited samples were annealed at 800$^{\circ}C$. The reduction of dielectric losses at high-deposition temperatures and post annealing correlated well with the x-ray diffraction peak widths.