• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.247-253
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• 2003

In this study, a numerical analysis of the deposition of gallium arsenide from TMGa and arsine in a horizontal MOCVD reactor is performed to investigate the effect of inlet diffuser shape of reactor on the flow and deposition characteristics. The effects of two geometric parameters (diffuser angle, diffuser shape) on the growth rate, growth rate uniformity, flow uniformity and pressure loss are presented. As a results, it is found that the optimum linear diffuser angle is in the range of $50^{\circ}$∼$55^{\circ}$ and parabolic diffuser in the range of $40^{\circ}$∼$45^{\circ}$ from the viewpoint of growth rate uniformity, flow uniformity and average growth rate. It is also found that variation of diffuser angle has greater impact on growth rate uniformity than average growth rate particularly in parabolic diffuser.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.31-35
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• 2002

Abstract Spinel powder having a particle size of 0.9$\mu$m was calcined for 30 min at $1300^{\circ}C$, followed by ball milling for 4h, to obtain the spinel particle size of 3.29$\mu$m. The die-pressed spinel was presintered at $1100^{\circ}C$ for 2h and then lanthanum aluminosilicate glass was infiltrated at $1080^{\circ}C$ for 0~2 h to investigate the penetration kinetics in glass-spinel composite. The infiltration distance is parabolic in time due to capillarity. The strength and the fracture toughness of glassspinel composites were 317 MPa and 3.56 MPa $m^{1/2}$ respectively and dual microstructure of column (needle) and polygonal shapes as a result of recrystallization was observed due to the high calcination temperature.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.449-452
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• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Communications of the Korean Mathematical Society
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• v.37 no.2
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• pp.455-472
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• 2022

For j = 0, 1, 2,…, k - 1; k ≥ 2; and - 1 ≤ B < A ≤ 1, we have introduced the functions classes denoted by ST_[j,k](A, B) and K_[j,k](A, B), respectively, called the generalized (j, k)-symmetric starlike and convex functions. We first proved the sharp bounds on |f(z)| and |f'(z)|. Various radii related problems, such as radius of (j, k)-symmetric starlikeness, convexity, strongly starlikeness and parabolic starlikeness are determined. The quantity |a²₃ - a₅|, which provide the initial bound on Zalcman functional is obtained for the functions in the family ST_[j,k]. Furthermore, the sharp pre-Schwarzian norm is also established for the case when f is a member of K_[j,k](α) for all 0 ≤ α < 1.

• Journal of Welding and Joining
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• v.15 no.3
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• pp.128-135
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• 1997

Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.556-563
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• 1999

The corrosion behavior of heat-resistant alloys, More 1 and Super 22H in molten salts of LiCl and $LiCl-Li_2$O was investigated in the temperature range of $650~850^{\circ}C$. In a molten salt of LiCl, a dense protective oxide scale of $LiCrO_2$ was formed, following growth of oxide scale with parabolic kinetics. But in a mixed molten salt of LiCl, a dense protective oxide scale of $LiCrO_2$ was formed, following growth of oxide scale with parabolic kinetics. But in a mixed molten salt of $LiCl-Li_2$O, a porous non-protective scale of Li\ulcorner(Cr, Ni, Fe)\ulcornerO$_2$was formed, following growth of oxide scale with linear kinetics. The corrosion rate increased slowly with the increase of temperature up to $750^{\circ}C$, but above $750^{\circ}C$ rapid increase in corrosion rate observed. The corrosion behavior of Super 22H alloy was similar to that of More 1 alloy, but Super 22H showed higher corrosion resistance than More 1.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.114-119
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• 1993

We constructed a laser-heated pedestal growth station using a 25 W $CO_2$ laser to grow various single crystal fibers. The LHPG system consists of the optical system which includes a reflaxicon, an elliptic mirror and a parabolic mirror with their centers drilled, and the translation system to move a source and a seed independently. To test the system, we pulled a few ruby fibers with diameter of 600 ${\mu}m$ and length of 2 cm, and studied characteristics of their photoluminescence.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.15-20
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• 2007

Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and $165^{\circ}C$ for 300h. In result, $Cu_6Sn_5\;and\;Cu_3Sn$ were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and $Cu_3Sn$ as well as within the $Cu_3Sn$ layer and propagated with increasing time. $(Cu,Ni)_6Sn_5$ formed at interface between SnPb and Ni(P) after reflow and thickness change of $(Cu,Ni)_6Sn_5$ didn't observe with aging time. The apparent activation energies for growth of total $(Cu_6Sn_5+Cu_3Sn),\;Cu_6Sn_5\;and\;Cu_3Sn$ intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1080-1086
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• 2005

We have studied the Ge redistribution after dry oxidation and the oxide growth rate of $Si_{1-x}Ge_x$ epitaxial layer. Oxidation were performed at 700, 800, 900, and $1,000\;^{\circ}C$. After the oxidation, the results of RBS (Rutherford Back Scattering) & AES(Auger Electron Spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $Si_{1-x}Ge_x$ interface. It is shown that the presence of Ge at the $Si_{1-x}Ge_x$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700 and 800$^{\circ}C$, while it was decreased at both 900 and $1,000^{\circ}C$ as the Ge mole fraction was increased. The dry of idation rates were reduced for heavy Ge concentration, and large oxiidation time. In the parabolic growth region of $Si_{1-x}Ge_x$ oxidation, the parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the $1,000^{\circ}C$, AES showed that Ge peak distribution at the $Si_{1-x}Ge_x$ interface reduced by interdiffusion of silicon and germanium.