Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Ge Redistribution and Interdiffusion during Si1-xGex Layer Dry Oxidation

Si1-xGex 층의 건식산화 동안 Ge 재 분포와 상호 확산의 영향

  • Published : 2005.12.01
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Abstract

We have studied the Ge redistribution after dry oxidation and the oxide growth rate of $Si_{1-x}Ge_x$ epitaxial layer. Oxidation were performed at 700, 800, 900, and $1,000\;^{\circ}C$. After the oxidation, the results of RBS (Rutherford Back Scattering) & AES(Auger Electron Spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $Si_{1-x}Ge_x$ interface. It is shown that the presence of Ge at the $Si_{1-x}Ge_x$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700 and 800$^{\circ}C$, while it was decreased at both 900 and $1,000^{\circ}C$ as the Ge mole fraction was increased. The dry of idation rates were reduced for heavy Ge concentration, and large oxiidation time. In the parabolic growth region of $Si_{1-x}Ge_x$ oxidation, the parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the $1,000^{\circ}C$, AES showed that Ge peak distribution at the $Si_{1-x}Ge_x$ interface reduced by interdiffusion of silicon and germanium.

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References

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