• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.366-367
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• 2005

The effect of benzotriazole (BTA) on the adhesion force of silica and pad particle on Cu/TEOS wafer surfaces was investigated with and without the addition of BTA. Cu-BTA had the isoelectric point (IEP) at around pH 4$\sim$8. Pad particles were more positive zeta potentials than silica. The adhesion force initially decreased of silica and pad particle on Cu surfaces when BTA was added. However, the more BTA was added, the more adhesion force gradually increased with the increase of BTA concentrations. Then the adhesion force of pad particle was higher than silica. And TEOS didn't resulted increasing adhesion force like Cu when BTA was added in DI water.

• 한국입자에어로졸학회지
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• 제19권2호
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• pp.31-42
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• 2023

The charge and magnetic characteristics of LM (Low-metallic) and NAO (Non-asbestos-organic) brake wear particles were analyzed. The ratio of charged particles from total particles is about 86% of the LM pad and about 92% of the NAO pad. Number of charge per particle from the NAO pad is also higher than that of the LM pad. The ratio of magnetic particles from total particles increases with the particle size. The ratio of magnetic particles from the LM pad is about 15% for the particles with the size of 1 ㎛, and about 74% for ones with 5 ㎛. The ratio from the NAO pad is about 5% for the particles with the size from 0.5 ㎛ to 2 ㎛, and about 80% for the particles with 5 ㎛. Through the analysis of the components of the two pads with SEM-EDS (Scanning Electron Microscopy - Energy Dispersive X-ray Spectroscopy), it was found that the LM pad was occupied with more iron fraction than the NAO pad and that PM_2.5-10 was occupied with more iron fraction than PM_2.5. The particles smaller than 10 ㎛ (i.e. PM₁₀) from the LM pad contained about 83% of charged particles, about 43% of magnetic particles, and about 93% of charged or magnetic particles. PM₁₀ from the NAO pad contained about 88% of charged particles, about 15% of magnetic particles, and about 89% of charged or magnetic particles.

• 한국정밀공학회지
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• 제23권5호
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• pp.59-67
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• 2006

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some previous works show that RR is determined by production of pressure and velocity and NU is also largely affected by velocity of flowfield during CMP. This study is about the direct measurement of velocity of slurry during CMP and whole flowfield upon the non-groove pad by Particle Image Velocimetry(PIV). Typical PIV system is modified adequately for inspecting CMP and slurry flowfield is measured by changing both pad rpm and carrier rpm. We performed measurement with giving some variation in the kinds of pad. The results show that the flowfield is majorly determined not by Carrier but by Pad in the case of non-groove pad.

• 한국정밀공학회지
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• 제20권4호
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• pp.183-188
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• 2003

Particulate contamination is known to be a significant cause of failures of removable storage media. In this work, the effect of particles on the surface damage of removable hard disk media was investigated. The particles of different materials and size were introduced to the Head Disk Interface (HDI) using a particle injection system. It was round that the particles of particulate size and property serious damaged the media. This study showed that cleaning pad is effective for reducing particle contamination, except fer the particles of specific size and property. As a means to remove the particles of specific sire. the concept of using a stepped taper at the leading edge of the slider is proposed.

• Tribology and Lubricants
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• 제28권1호
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• pp.7-11
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• 2012

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.946-949
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• 2002

Particulate contamination is known to be a significant cause of failures of removable storage media. In this work, The effect of particles on the surface damage of removable hard disk media was investigated. The particles of different materials and size were introduced to the head-disk interface using a particle injection system. It was found that the particles of particulate size and property serious damaged the media. This study showed that cleaning pad is effective for reducing particle contamination, except for the particles of specific size and property. As a means to removed the particles of specific size, the concept of using a stepped taper at the leading edge of the slider is proposed.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.445-446
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• 2002

The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, th ε groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.

• 한국유체기계학회 논문집
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• 제6권4호
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• pp.21-28
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• 2003

CMP (Chemical Mechanical Polishing) is to achieve adequate local and global planarization for future sub-micrometer VLSI requirements. In designing CMP, numerical computation is quite helpful in terms of reducing the amount of experimental works. Stresses on pad, concentration of particles and particle tracking are studied for design. In this research, the optimization of grooved pad shape of CMP is performed through numerical investigation of slurry flow in CMP process. The result indicates that the combination of sinusoidal groove and skewed pad is the most optimal shape among the twenty candidates. Useful information can be obtained in velocity, pressure, stress, concentration of particles and particles trajectories, etc.

• 정보저장시스템학회논문집
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• 제7권2호
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• pp.60-64
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• 2011

Chemical mechanical planarization is one of the core processes in fabrication of semiconductors, which are increasingly used for information storage devices like solid state drives. For higher data capacity in storage devices, CMP process is required to show ultimate precision and accuracy. In this work, 2-dimensional finite element models were developed to investigate the effects of the slurry particle impact on microscratch generation and the phenomena generated at pad-particle-wafer contact interface. The results revealed that no plastic deformation and corresponding material removal could be generated by simple impact of slurry particles under real CMP conditions. From the results of finite element simulations, it could be concluded that the pad-particle mixture formed in CMP process would be one of major factors leading to microscratch generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.352-353
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of do-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.