• 제목/요약/키워드: Package module

검색결과 254건 처리시간 0.037초

Efficient Decoupling Capacitor Optimization for Subsystem Module Package

  • Lim, HoJeong;Fuentes, Ruben
    • 마이크로전자및패키징학회지
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    • 제29권1호
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    • pp.1-6
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    • 2022
  • The mobile device industry demands much higher levels of integration and lower costs coupled with a growing awareness of the complete system's configuration. A subsystem module package is similar to a board-level circuit that integrates a system function in a package beyond a System-in-Package (SiP) design. It is an advanced IC packaging solution to enhance the PDN and achieve a smaller form factor. Unlike a system-level design with a decoupling capacitor, a subsystem module package system needs to redefine the role of the capacitor and its configuration for PDN performance. Specifically, the design of package's form factor should include careful consideration of optimal PDN performance and the number of components, which need to define the decoupling capacitor's value and the placement strategy for a low impedance profile with associated cost benefits. This paper will focus on both the static case that addresses the voltage (IR) drop and AC analysis in the frequency domain with three specific topics. First, it will highlight the role of simulation in the subsystem module design for the PDN. Second, it will compare the performance of double-sided component placement (DSCP) motherboards with the subsystem module package and then prove the advantage of the subsystem module package. Finally, it will introduce three-terminal decoupling capacitor (decap) configurations of capacitor size, count and value for the subsystem module package to determine the optimum performance and package density based on the cost-effective model.

Development of the SAR Data Processing Package

  • Kim Kwang-Yong;Jeong Soo;Kim Kyoung-Ok
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2004년도 Proceedings of ISRS 2004
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    • pp.526-528
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    • 2004
  • This paper describes the SAR data processing S/W package it will be able to process the SAR image. This package constructs the several modules: SAR Image processing module, measuring module of surface displacement using differential interferometric SAR method, classification module using the POLSAR data, SAR Focusing module. In this paper, briefly describe the algorithm that is adopted to the functions, and module architecture.

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송전망 축약을 위한 교육용 프로그램 개발 (An Educational Program for Reduction of Transmission Network)

  • 송형용;정윤원;원종집;박종배;신중린
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.153-154
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    • 2008
  • This paper presents a window-based software package for the education and training for the reduction of power system by using locational marginal price (LMP), clustering, and similarity indices of each bus. The developed package consists of three modules: 1) the LMP module, 2) the Clustering module and 3) the Reduction module. Each module has a separated and interactive interface window. First of all, LMPs are created in the LMP module, and then the Clustering module carries out clustering based on the results of the LMP module. Finally, groups created in this Clustering module are reduced by using the similarity indices of each bus. The developed package displays a variety of tables for results of the LMPs of base network, voltages, phases and power flow of reduced network so that the user can easily understand the reduction of network. To demonstrate the performance of the developed package, it is tested for the IEEE 39-bus power system.

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객체지향기법을 이용한 전력계통 해석을 위한 그래픽 소프트웨어 개발 (The Development of Graphics Package for Power System Analysis using Object-Oriented Programming)

  • 김재현
    • 대한전기학회논문지:전력기술부문A
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    • 제55권10호
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    • pp.418-425
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    • 2006
  • This paper describes a simulation package for a power system using objected-oriented programming. The package includes four parts which are a power flow, a short circuit calculation, a transient simulation program, and an economic dispatch. The graphical user interface(GUI) is designed as a common platform which allows the user to create one-line diagrams of systems, specify components of power systems as well as simulation parameters, and view the output produced by the chosen application. The paper presents the data structure of the functional modules such as the draw module, power system data module, the power system simulation module, and the utility module using the object oriented programming. This package may be useful for educational and research purposes.

A Cost-Effective 40-Gb/s ROSA Module Employing Compact TO-CAN Package

  • Kang, Sae-Kyoung;Lee, Joon Ki;Huh, Joon Young;Lee, Jyung Chan;Kim, Kwangjoon;Lee, Jonghyun
    • ETRI Journal
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    • 제35권1호
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    • pp.1-6
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    • 2013
  • In this paper, we present an implemented serial 40-Gb/s receiver optical subassembly (ROSA) module by employing a proposed TO-CAN package and flexible printed circuit board (FPCB). The TO-CAN package employs an L-shaped metal support to provide a straight line signal path between the TO-CAN package and the FPCB. In addition, the FPCB incorporates a signal line with an open stub to alleviate signal distortion owing to an impedance mismatch generated from the soldering pad attached to the main circuit board. The receiver sensitivity of the ROSA module measures below -9 dBm for 40 Gb/s at an extinction ratio of 7 dB and a bit error rate of $10^{-12}$.

광모듈 패키지용 Window 의 Metallization Pattern 제작 및 특성 평가 (Fabrication and Characterization of Window Metallization Pattern for Optical Module Package)

  • 조현민;단성백;류헌위;강남기
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.239-242
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    • 2003
  • Optical module package is a hermetic metal-ceramic package for carrying optical IC. In case of LD(laser diode) module, window is used for both the path of optical signal and hermetic sealing of package. So, window has the metallization pattern on the surface for brazing process with package wall. In this study, several method were investigated for metallization. Thin film, thick film and mixed method were used for fabrication of metallization pattern. After brazing process, hermeticity and adhesion strength were tested for characterization of metallization pattern.

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단일 패키지의 특성 분석을 통한 고출력 발광 다이오드 모듈의 접합 온도 측정 (Measurement of Junction Temperature in High Power LED Module with Property Analysis of Single Package)

  • 이세일;김우영;정영기;양종경;박대희
    • 한국전기전자재료학회논문지
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    • 제23권12호
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    • pp.973-977
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    • 2010
  • The temperature of junction in LED affects the life time and performance. however, the measurement of junction temperature in module is very difficult. In this paper, to measure the junction temperature in LED module, optical and electrical properties is measured in single package in temperature from 25 [$^{\circ}C$] to 85 [$^{\circ}C$], and then junction temperature can is estimated in module with measuring the average voltage of single package. As results, the junction temperature of single package is measured the temperature of 61.2 [$^{\circ}C$] in ambient temperature, also, the junction temperature of LED module is measured the temperature of 72.5 [$^{\circ}C$] in ambient temperature.

TO 패키지를 사용한 10Gbps 광수신기 모듈 (10Gbps Optical Receiver Module using a novel TO Package)

  • 구자남;조성문;송일종;장동훈;윤응률;원종화
    • 한국광학회:학술대회논문집
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    • 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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    • pp.184-185
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    • 2002
  • We discussed the main issues of 10GHz Receiver packaging. High frequency structure simulations and circuit simulations for TO-CANs led to a new design for 10GHz optical receiver module packaging. The simulation results were compared to the measured laboratory data. The proposed package has low cost and easy manufacture process far mass production. Using this package, we had a good optical to electrical conversion (OE) characteristic at a data rate of 10Gbps.

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차세대 전력반도체 소자 및 패키지 접합 기술 (Recent Overview on Power Semiconductor Devices and Package Module Technology)

  • 김경호;좌성훈
    • 마이크로전자및패키징학회지
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    • 제26권3호
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    • pp.15-22
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    • 2019
  • In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

A Wafer Level Packaged Limiting Amplifier for 10Gbps Optical Transmission System

  • Ju, Chul-Won;Min, Byoung-Gue;Kim, Seong-Il;Lee, Kyung-Ho;Lee, Jong-Min;Kang, Young-Il
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권3호
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    • pp.189-195
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    • 2004
  • A 10 Gb/s limiting amplifier IC with the emitter area of $1.5{\times}10{\mu}m^2$ for optical transmission system was designed and fabricated with a AIGaAs/GaAs HBTs technology. In this stud)', we evaluated fine pitch bump using WL-CSP (Wafer Level-Chip Scale Packaging) instead of conventional wire bonding for interconnection. For this we developed WL-CSP process and formed fine pitch solder bump with the $40{\mu}m$ diameter and $100{\mu}m$ pitch on bonding pad. To study the effect of WL-CSP, electrical performance was measured and analyzed in wafer and package module using WL-CSP. In a package module, clear and wide eye diagram openings were observed and the riselfall times were about 100ps, and the output" oltage swing was limited to $600mV_{p-p}$ with input voltage ranging from 50 to 500m V. The Small signal gains in wafer and package module were 15.56dB and 14.99dB respectively. It was found that the difference of small signal gain in wafer and package module was less then 0.57dB up to 10GHz and the characteristics of return loss was improved by 5dB in package module. This is due to the short interconnection length by WL-CSP. So, WL-CSP process can be used for millimeter wave GaAs MMIC with the fine pitch pad.