• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.123-124
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• 2006

The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

• 한국결정성장학회지
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• 제6권2호
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• pp.177-184
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• 1996

본연구에서는 금속타겟을 이용한 반응성 스퍼터링법을 이용하여 PZT 박막의 전극 및 계면 특성의 개선을 위해, $Pt/SiO_{2}/Si$과 $Ir/SiO_{2}/Si$기판을 각각 사용하였으며, buffer layer로는 $PbTiO_{3}$을 이용하였다. Pt하부전극을 이용하여 PZT 박막제조시 randomly oriented PZT 박막이 얻어졌으나, buffer layer를 이용한 경우 (100)으로 배향된 결정성이 좋은 PZT 박막을 얻을 수 있었다. Ir하부전극을 이용한 경우, buffer layer증착에 따른 PZT 박막의 상형성이 다소 증진되었으며, Pt하부전극의 경우에 비해 잔류분극의 증가와 항전계의 감소를 관찰할 수 있었다. PZT 박막제조시 buffer layer의 이용에 따라 유전율이 증가함을 알 수 있었으며, 또한 Ir하부전극의 경우가 Pt하부전극의 경우보다 더 좋은 유전특성이 얻어졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.142-145
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• 1996

In this study, dielectric and piezoelectric properties of 0.5PNN-(0.5-x)PZN-xPZT system ceramics with PZT mole ratio were investigated. As the amount of PZT increases, curie temperature was increased. The maximum of dielectric and piezoelectric constant was shoun at 0.3 mole of PZT amount. As a results, we have found that the structure of ceramics with PZT 0.3 mole was morphotropic phase boundary.

• Composites Research
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• 제35권3호
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• pp.134-138
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• 2022

본 연구에서는 기존 폴리머 콘크리트의 진동 감쇠 효과를 향상시키기 위해 압전 재료 중 하나인 PZT 파우더를 첨가하여 티타늄 파우더/폴리머 콘크리트 복합재료를 제작하였다. 티타늄 파우더는 압전 효과를 이용한 진동특성 변화를 극대화하기 위해 일정한 비율로 유지하였고, PZT 파우더를 첨가하지 않은 시편, PZT 파우더를 2.5 wt%, 5 wt% 첨가한 세 가지 종류의 복합재료 시편을 제작하였으며, 모든 시편에 대해 진동 특성 및 압축 물성 분석을 진행하였다. 그 결과, PZT 파우더 첨가 비율이 높아질수록 티타늄 파우더/폴리머 콘크리트에서 발생한 진동이 전달될 때 압전 효과로 인해 공진주파수에서 전달 함수 Inertance 값이 작아지는 것을 확인하였고, 특히 PZT 파우더 5 wt% 첨가 시편의 경우, 공진주파수에서 Inertance 값은 PZT가 첨가되지 않은 시편에 비해 약 19.3% 감소하는 것으로 나타났다. 시간에 따른 가속도 변화 폭 역시 PZT 파우더가 첨가됨에 따라 크게 감소하는 것으로 나타나 PZT 첨가에 따른 효과를 확인할 수 있었다. 또한, 압축강도 시험을 통해 5 wt%까지의 PZT 첨가에 의한 압축 물성 저하 정도는 미미한 것으로 나타났고, 시편 단면 분석을 통해 파우더가 고르게 분산된 것을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1199-1201
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• 1995

PZT powders were prepared by the molten salt synthesis method. The porous PZT was preapred from the mixture of PZT and PVA powders by BURPS(BURnout plastic Sphere) technique. The acoustic properties with various plastic sphere wt.% were studied. The acoustic impedance of porous PZT was smaller than that of single phase PZT ceramics. And the pulse-reponse of porous PZT maded transducer was significantly advanced to that of solid PZT maded transducer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.997-1000
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• 2001

Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$(PZT) thin films have been prepared by rf-magnetron sputtering methods and investigated the structural and electrical properties. In order to investigate the effects of sputtering conditions, input power was controlled during deposition. Crystallization process and microstructure of PZT thin films were largely affected by input power. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt/Ti bottom electrode. The dielectric constants and polarization of PZT thin films were increased with increasing input power, and the coercive electric field was decreased with increasing input power . The dielectric constant of PZT thin films with input power 150 W was 966 at 1 kHz. we, authors, proposed that preferred orientation of PZT thin films were controlled by input power in sputtering methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• 전기학회논문지P
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• 제51권2호
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.183-186
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• 1994

Porous piezoelectric ceramics of P7T have been newly developed to apply for transducers in an echo sounder PZT powders were prepared by the molten salt synthesis method. The porous PZT was prepared from a mixture of PZT and polyvinylalcohol(PVA) powders by BURPS(Burnout Plastic Sphere) technique. The piezoelectric and acoustic properties with various PVA wt.% have studied. The density of porous PZT ceramics was decreased linearly with increasing the PVA sphere wt.%. Piezoelectric coefficient d$\_$33/ of porous PZT ceramics was almost same to that of single phase PZT ceramics. The thickness mode coupling factor k$\_$t/ was ranged over 0.53∼0.59 comparable with the single phase PZT ceramics(k$\_$t/=0.7).