• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1092-1098
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.

• 한국결정학회지
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• 제8권2호
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• pp.97-104
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• 1997

수열합성법에 의한 Pb(TixZr1-x)O3분말 합성에 대하여 연구하였다. 합성원료로는 Lead-acetate trihydrate와 Titanium isoproprxide, Zirconium propoxide를 isopropanol로 희석시킨후 가수분해 시켜 얻은 Ti/Zr 젤을 사용하였고, 광화제로서 KOH(0.5m, 1m, 2m)를 사용하였으며 140℃, 150℃, 160℃의 반응온도에서 합성하였다. 합성된 Pb(TixZr1-x)O3분말은 입방체의 형태를 띄고 있었으며 응집된 형태로 나타났다. 1m과 2m의 KOH에서는 PZT 합성이 잘 이루어졌으며 1m의 경우 8시간, 2m의 경우 1시간 이상의 반응이 필요하였고 0.5m KOH에선 5일의 반응시간에도 순수한 PZT분말만이 합성되지 않았다. 낮은 반응온도와 짧은 반응시간의 실험조건에선 합성된 분말이 대부분 PZT분말이었으나 미반응 Ti/Zr 젤이 상당량 존재하였다. 합성된 PZT분말의 크기는 KOH농의 증가에 따라 증가하였다. 중간생성물로서 PbO고용체가 생성되었으며 이는 Ti고용량이 10% 정도의 큰것과 3%정도의 작은 것으로 크게 나눌 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제2권1호
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• pp.14-24
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• 1989

본 연구에서는 1-3형 PZT/Epoxy 압전복합재료를 제조하고 이에 대한 D-E 곡선, 펄스응답특성 및 유중발생전압특성 등을 조사하였다. 압전복합재료의 음향임피던스는 PZT체적비가 증가함에 따라 비례적으로 증가하였다. 그리고 펄스응답특성은 단일상 PZT의 특성에 비하여 아주 양호하게 나타났으며 PZT 체적비가 40% 이상에서는 펄스응답특성이 거의 일정하게 되었다. 유중에서의 발생전압은 PZT체적비, 시편두께 그리고 유중압력이 증가함에 따란 비례적으로 증가하였다. 이들의 결과는 초음파 트랜스듀서 제작에 좋은 자료가 될 것으로 생각한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.56-59
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• 2000

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

• 한국인쇄학회지
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• 제14권1호
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• pp.1-15
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• 1996

In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.

• E2M - 전기 전자와 첨단 소재
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• 제6권5호
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• pp.436-445
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• 1993

2단계하소법에 의해 낮은 하소온도에서 미세하고도 균일한 PZT분말을 합성하였다. 우선 Zr $O_{2}$와 Ti $O_{2}$ 혼합분말을 1차하소하여 (Z $r_{0.53}$ $Ti_{0.47}$) $O_{3}$(ZTO) 분말을 합성하고 이 ZTO 고용분말에 PbO와 N $b_{2}$ $O_{5}$을 혼합한 후 650-800.deg.C에서 2시간 하소하여 PZT 분말을 합성하였는데 얻어진 분말은 고상반응법에 비해 미세할 뿐만 아니라 XRD 분석결과 710.deg.C의 낮은 하소온도에서도 PZT 단일상을 나타내었다. 2단계하소법에 의해 하소온도를 낮출 수 있는 주된 이유로는 고상반응법에서는 중간생성물인 PbTi $O_{3}$상의 생성이 수반됨으로 850.deg.C 이상 되어야만 안전한 PZT가 생성될 수 있는 점을 들 수 있다. 또 2단계하소법에 의하면 950.deg.C이하의 낮은 소결온도에서도 치밀화가 미루어지는 소결이 가능함을 알 수 있었는데 이와같이 소결온도를 낮출 수 있는 것은 고상반응법에 비해 미세한 PZT 분말을 사용하였기 때문이라 풀이된다.이된다.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2004년도 춘계학술대회논문집
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• pp.888-893
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• 2004

This paper proposed a dual actuator using bimorph PZT for information storage device based on prove array NSOM(Near-field Scanning Optical Microscopy). The gap between the media and the optical head should be maintained within the optical tolerance. Therefore, a new actuator having high sensitivity is required. Bimorph PZT, which has fast access time and high sensitivity characteristic, is suitable for this precise actuating system. This paper is focused on derivation of mathematical model of dual bimorph PZT actuator and control algorithm. Hamilton's principle was used for mathematical model. The model is verified by FEA(Finite Element Analysis), and compared with experimental results. Different control algorithms were used f3r two bimorph PZT actuating same direction and opposite direction. The gap between recording media and optical head was controlled within 20nm in experiment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1508-1511
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• 1996

In the fields of the optics, precise machine, semiconducting processing, the micro-positioning actuators are required for the control of position in submicron range. In this study, dielectric properties of 0.5PNN-(0.5-x)PZN-xPZT system ceramics with different PZT mole ratio were investigated. As the amount of PZT incerases, curie temperature was increased. The maximum of dielectric and piezoelectric constant was shown at 0.3 mole ratio of PZT amount. As a results, we have found that the structrue of ceramics with PZT 0.3 mole was morphotropic phase boundary.