• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.865-869
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• 2002

The structural and electrical properties of PZT (lead zirconate titante) thin films grown on Pt (platinum) and Ru/Ru $O_2$(ruthenium/ruthenium oxide) electrodes were investigated. Thin films of PZT were deposited on a variety of electrodes using the rf-magnetron sputtering process. PZT films exhibited polycrystalline structure with strong PZT (100) plane and weak (211) plane for an optimizied Pt electrode and (100), (101), (111), (200), (210), (211) planes for Ru/Ru $O_2$. Switching polarization versus fatigue characteristic of Pt/Ti electrodes showed 20% degradation up to 1 $\times$ 10$_{9}$ cycles. No significant fatigue was observed in the films on Ru/Ru $O_2$ electrodes up to Ix109 test cycles. The results show that the new Ru/Ru $O_2$ bottom electrodes are expected to reduce the degradation of ferroelectric fatigue.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.24-27
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• 1994

Variations with structural and electrical properties of Yttrium added PZT thin films were observed and measured respectively. Area of rosette was increased by Yttrium added and shapes of hysteresis curves were changed to slim type. $Y^{3+}$ ion substituted $Pb^{2+}$ ion and played the role of doner. Because the creation of space charges was restricted by Yttrium, degradation of remanent polarizations by cumutation of polarization reversals of PZT was protected. But coercive field was increased because of vacancies generated Yttrium added.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.327-329
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• 2005

Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃(PZT) thin films were deposited by using a pulsed laser deposition method on a Pt/Ti/SiO₂/Si substrate with (Pb/sub 0.72/La/sub 0.28/)Ti/sub 0.93/O₃ (PLT) buffer and on a Pt/Ti/SiO₂/Si substrate without buffer. These films were annealed in H₂-contained ambient for 30 minutes at the substrate temperature of 400。C to evaluate the forming gas annealing effects. The comparative studies on the ferroelectric properties of these two films were carried out, which are shown that ferroelectric properties, such as remanent polarization didn't change in the case of PLT buffered PZT film while remanent polarization value of PZT film degraded from 20.8 C/㎠ to 7.3 C/㎠. The leakage current became higher in both cases, but that of the more-oriented PZT film had the moderate value of the 10/sup -6/ order of A/㎠. This is mainly because the hydrogen atoms which make the degradation of PZT films cannot infiltrate into the more -oriented PZT film as well as the less-oriented PZT film.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.6-9
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• 2005

Aging characteristics of 0.2PMN-0.8PZT multilayer ceramic actuators (MCA) has been investigated by applying both triangular wave function for unpoled and unipolar wave for poling. P-E hysteresis loops of the MCA had been distorted after about 90 million cycles running in triangular wave function. Effective electromechanical coupling coefficient was calculated in resonant and anti resonant frequencies. And pseudo-piezoelectric constant $d_{33}$ was also estimated from the strain versus electric field characteristics. The crack growth of MCA was clearly observed along to the boundary between electrode and inactive area. That results were thought due to the internal tensile stress came from both actuation of $d_{33}$ mode and motion of Poisson ratio.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• Smart Structures and Systems
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• v.16 no.5
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• pp.835-851
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• 2015

This paper presents theoretical and experimental evaluation of the structural health monitoring (SHM) capability of piezoelectric wafer active sensors (PWAS) at elevated temperatures. This is important because the technologies for structural sensing and monitoring need to account for the thermal effect and compensate for it. Permanently installed PWAS transducers have been One of the extensively employed sensor technologies for in-situ continuous SHM. In this paper, the electro-mechanical impedance spectroscopy (EMIS) method has been utilized as a dynamic descriptor of PWAS behavior and as a high frequency standing wave local modal technique. Another SHM technology utilizes PWAS as far-field transient transducers to excite and detect guided waves propagating through the structure. This paper first presents how the EMIS method is used to qualify and quantify circular PWAS resonators in an increasing temperature environment up to 230 deg C. The piezoelectric material degradation with temperature was investigated and trends of variation with temperature were deduced from experimental measurements. These effects were introduced in a wave propagation simulation software called Wave Form Revealer (WFR). The thermal effects on the substrate material were also considered. Thus, the changes in the propagating guided wave signal at various temperatures could be simulated. The paper ends with summary and conclusions followed by suggestions for further work.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.249-252
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• 2011

We investigated the low firing of $Li_2CO_3$ added $0.2Pb(Mg_{1/3}Nb_{2/3})O_3$ - 0.3Pb($Fe_{1/2}Nb_{1/2}$) - $0.5Pb(Zr_{0.475}Ti_{0.525})O_3$ (PMN-PFN-PZT) ceramics and multilayer actuators (MLAs) using Ag inner electrodes. It was found that 0.1 wt% $Li_2CO_3$ was quite effective in lowering the sintering temperature of PMN-PFN-PZT ceramics from $1,100^{\circ}C$ down to $900^{\circ}C$ without deteriorating their piezoelectric ceramics ($d_{33}$ = 425 pC/N and $k_p$ = 61.9%). However, excess $Li_2CO_3$ up to 0.3 wt% brings about unwanted problems such as the formation of a $LiPbO_2$ secondary phase and subsequent degradation in the piezoelectric properties. Using 0.1 wt% $Li_2CO_3$ added PMN-PFN-PZT ceramics, MLAs with Ag inner electrodes were successfully fabricated, resulting in a normalized strain of 580 pm/V at an electric field of 1.5 kV/mm.