Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of $Y^{3+}$ Impurity Addition on the Structural and Electrical Properties of PZT (65/35) Thin Film

$Y^{3+}$ 불순물 첨가가 PZT (65/35) 박막의 구조적, 전기적 특성에 미치는 영향

  • 이규선 (연세대학교 전기공학과) ;
  • 김준한 (연세대학교 전기공학과) ;
  • 윤현상 (연세대학교 전기공학과) ;
  • 이두희 (연세대학교 전기공학과) ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1994.11.01

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Abstract

Variations with structural and electrical properties of Yttrium added PZT thin films were observed and measured respectively. Area of rosette was increased by Yttrium added and shapes of hysteresis curves were changed to slim type. $Y^{3+}$ ion substituted $Pb^{2+}$ ion and played the role of doner. Because the creation of space charges was restricted by Yttrium, degradation of remanent polarizations by cumutation of polarization reversals of PZT was protected. But coercive field was increased because of vacancies generated Yttrium added.

Keywords