• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.103-104
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• 2006

In this paper. we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interlace. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then. we compared the structural characteristics before and alter CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.370-375
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• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.251-254
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• 2000

This paper was to measure the structure, electric characteristics of 0.05Pb($(Al_{0.5}Nb_{0.5})$) - 0.95Pb$(Zr_{0.52}Ti_{0.48})O_3$ ceramics dopped with Cr+Fe. The results of this paper were gotten such as follows; The dielectric constants were decreased with Cr+Fe. The dielectric loss was minimum value of 1.008[%], dopped with Cr+Fe O.9[wt%] at 1200[$^{\circ}C$], In case of sintering at 1150[$^{\circ}C$], electromechanical factodkp) was maximum value of kp 42.73[%], at Cr+Fe 0.9[wt%]. The mechanical quality factor(Qm) was maximum value at Cr+Fe 1.2 [wt%], Also, in case of dopped with Cr+Fe, it make a improvement in temperature coefficient of resonant frequency at 0.3[wt%], 1150[$^{\circ}C$].

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.127-132
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• 2008

The effect of $CeO_2$ as a sintering additive on the microstructure and the piezoelectric property of yPb$(Sb_{0.5}Nb_{0.5})O_3$-(1-y)Pb$(Zr_{0.52}Ti_{0.48})O_3$ ($0{\leq}y{\leq}0.1$, PSN-PZT) for a hypersonic sound speaker (HSS) application was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the samples were examined using XRD and FE-SEM, respectively. Study on the influence of $CeO_2$ additives on the dielectric and piezoelectric properties indicated that the $CeO_2$-added PSN-PZT system had a high piezoelectric properties. The optimized results of ${\varepsilon}_r=1209$, $K_p$=52% $d_{33}$=351(pC/N) and $Q_m$=1230.16 were obtained at 0.4 wt.% $CeO_2$-added PSN-PZT.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1368-1369
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• 2006

In this thesis, the minuteness structure, piezoelectric, and dielectric characteristics of Pb[(Co0.5 W0.5) 0.03 (Ni1/3 Nb2/3) 0.07(Zr0.52 Ti0.48)0.9]O3+0.5Wt% MnO2 ceramics has been systematically investigated as a function of the sintering temperature after manufacturing the specimens with a general method. The electromechanical coupling coefficient (Kp) showed its maximum of 31.116[%] in the sintered specimens at $1050[^{\circ}C]$, and its minimum of 20.220[%] in the sintered specimens at $1150[^{\circ}C]$. The mechanical quality coefficient (Qm) marked the maximum of 139.526 at the sintering temperature of $1150[^{\circ}C]$.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.109-112
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• 2004

In this study, in order to develop the low temperature sintering ceramics for ultrasonic vibrator, Pb(Sb$\_$$\frac{1}{2}$/Nb$\_$$\frac{1}{2}$/) O$_3$-Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-Pb(Zr$\_$0.48/Ti$\_$0.52/)O$_3$ ceramics were manufactured as a function of the amount of CuO addition, and their dielectric and piezoelectric characteristics were investigated. With increasing CuO addition, the grain size and density increased up to 0.3 wt% CuO addition. Taking into consideration electromechanical coupling factor(k$\_$p/) of 0.53, mechanical quality factor(Q$\_$m/) of 423, dielectric constant($\varepsilon$$\_$r/) of 1,759 and piezoelectric constant(d$\_$33/) of 362pC/N, it could be concluded that 0.5 wt% CuO added composition ceramic sintered at 920$^{\circ}C$ was suitable for ultrasonic vibrator application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.107-108
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• 2005

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.321-322
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• 2007

In this thesis, the sintering properties and piezoelectric properties of $Pb[(Co_{0.5}W_{0.5})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.07}(Zr_{0.52}Ti_{0.48})_{0.9}]O_3+0.5[wt%]MnO_2$ ceramics has been systematically investigated as a function of the sintering temperature after manufacturing the specimens with a general method. The lattice constant from the analysis of crystal structure showed that the pychlore structure was decreased with the increase of the sintering temperature. Density was decreased by increasing $B_2O_3$. TCFr was showed its minimum variation rate of 0.35~-0.52[%] in the sintered temperature 950[$^{\circ}C$], $B_2O_3$ 3[wt%]. The electromechanical coupling coefficient (Kp) showed its maximum of 31.116[%] in the sintered temperature 1050[$^{\circ}C$], and its minimum of 20.220[%] in the sintered temperature 1150[$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.20-20
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• 2010

The effect of excimer laser annealing on the structural and dielectric behaviors of $PbZr_{0.52}Ti_{0.48}O_3$ (PZT) thin films has been investigated. The amorphous PZT thin films were prepared on Pt/Ti/$SiO_2$/Si substrates by a sol-gel method. The PZT precursor was prepared from lead acetate, zirconium acetylacetonate, and titanium isopropoxide. The starting materials were dissolved in n-propanol and 1,3-propanediol. After, the amorphous PZT thin films were laser-annealed (using KrF excimer laser) as a function of the laser energy density and the number of laser pulse. Structural properties of PZT thin films are characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric characterization was done on a RT66A test system and a Agilent 4294A impedance analyzer. The PZT thin films show that excimer laser irradiation drastically improved the crystallization and dielectric properties of the PZT thin films, depending on the energy density and the pulse number.