• Title/Summary/Keyword: PZT(Pb〔Zr,Ti〕O$_3$)

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The Electrical Properties and Resonant Frequency of Pt/Pb(Zr,Ti)$O_3$/Pt Films (Pt/Pb(Zr,Ti)$O_3$/Pt 박막의 전기적 특성과 공진주파수에 관한 연구)

  • Park, Young;Lee, Ki-Won;Jang, Dong-Uk;Park, Hyun-June;Park, Gi-Yub;Choi, Won-Seok;Song, Joon-Tae
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1552-1554
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    • 2004
  • The modeled resonant frequency and electrical properties of Pb(Zr, Ti)$O_3$ (PZT) film with various thicknesses have been investigated in film bulk acoustic wave resonators (FBARs). PZT films and Pt electrodes were fabricated by rf-magnetron sputtering. Fabrication process of electrodes and PZT were patterned by simple lift-off process and then back side of silicon was etched by 45wt% KOH. The crystal structure of PZT films with 0.5, 1 and 2 ${\mu}m$ thickness was investigated by x-ray deflection (XRD) and scanning electron microscopy (SEM). The dielectric constant and performance characteristics of PZT FBAR strongly depended on the film thickness. The resonant frequency of PZT films decreased with increasing film thickness. These sputtered PZT FBAR with simple lift-off process enable us to fabricate high Q values with resonant frequencies. (0.71 - 1.48 GHz).

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Piezoelectric and Electrical Characteristics of PMN-PZT Ceramics With Addition of Cr (Cr이 첨가된 PMN-PZT 세라믹스의 압전 및 전기적특성)

  • 장낙원;이두희;백동수;이개명;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1991.10a
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    • pp.20-23
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    • 1991
  • In this study, 0.05Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$+ 0.95Pb(Zr/Ti)O$_3$+x[wt%]Cr$_2$O$_3$piezoelectric ceramics were fabricated by Hot-press method, and its structural, dielectrical, piezoelectrical properties, temperature stability and aging characteristics were investigated. Among the MPB and tetragonal compositions, the specimens with 0.2, 0.3 and 0.4 [wt%] Cr$_2$O$_3$ additive amount had the poisson ratio more than 1/3. At tetragonal phase, the aging was small, and the temperature stability was improved by Cr addition. The specimen most suitable to the HF device substrate was the one with the composition of 47/53 (Zr/Ti) an 0.4 [wt%] Cr$_2$O$_3$addition.

Effects of Excess PbO and Ball-Milling on the Microstructure, Sintering Behavior and Mechanical Properties of PZT Ceramics (과잉 PbO 첨가 및 미분쇄에 의한 PZT 압전세라믹스의 미세구조제어와 소결특성 및 기계적 성질)

  • 전봉관;남효덕;김상태
    • Journal of the Korean Ceramic Society
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    • v.32 no.6
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    • pp.726-734
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    • 1995
  • Pb(Zr0.53Ti0.47)O3 (PZT) ceramics having different microstructures were fabricated at low temperatures using calcined PZT powders with addition of excess PbO powder and/or ball milling. The effects of excess PbO and ball milling time on the microstructure, the sintering characteristic, and the mechanical properties of these ceramics were studied. Fine powders with average particle size of 0.38㎛ could be obtained by ball milling with 2.5 mm Ф zirconia balls for 120 hours. By the addition of 2mol% of excess PbO to these powders, it was possible to obtain well-densitified PZT ceramics at low sintering temperature of 980℃. Densification behavior of PZT was affected by the addition of excess PbO powder, while, grain growth was hardly affected by PbO addition. It was observed that Vicker's hardness decreased and fracture toughness increased with the increasing amount of PbO. At 1mol% excess PbO, it was shown that the minimum values of hardness and maximum fracture toughness were achieved. In addition, with increasing sintering time, the fracture toughness decreased and the hardness increased.

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Electric aging phenomena of $0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ Multilayer Ceramic Actuators ($0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ 적층형 세라믹 액츄에이터의 전기적 열화 특성)

  • Koh, Jung-Hyuk;Jeong, Soon-Jong;Ha, Moon-Su;Lee, Dong-Man;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.219-222
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    • 2003
  • $0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ 조성을 이용하여 $5{\times}5{\times}5mm^3$의 적층형 세라믹 액츄에이터 소자를 tape casting 방법으로 제작하였다. 전극재로서는 Ag-Pd를 이용하여 총 50층의 layer를 적층하였으며, 적층된 액츄에이터를 $1100^{\circ}C$의 온도에서 소결하였다. X-ray diffractometer를 이용하여 제작된 소자와 열화된 소자의 구조적인 특성을 분석하였다. 제작된 소자의 열화 특성을 알아보기 위하여 60 Hz 의 triangular wave를 인가하여 열화전과 후의 p-E hystcresis loop의 변화를 살펴보았으며, 인가된 전압의 변화에 따라서 소자에서 발생되는 양의 열을 측정하였다. 파괴된 소자의 파단면에 대한 SEM 분석을 통하여 소자의 파괴 메카니즘을 알아보도록 하였다. 이로부터 전기적 기계적 열화가 소자의 동작에 미치는 영향에 대해서 알아 보았다.

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The Electric and Ferroelectric of Pb(Zr0.52Ti0.48)O3 Thin Films Deposited on Ruthenium Electrodes (루테늄 전극위에 증착된 PZT 박막의 전기적 및 강유전 특성)

  • Hwang, Hyun Suk;Yu, Yougn Sik;Lim, Yun-Sik;Kang, Hyun-Il
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.63 no.1
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    • pp.46-49
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    • 2014
  • $Pb(Zr_{0.52}Ti_{0.48})O_3(PZT)$ thin films deposited on $Ru/RuO_2$ bottom electrode that grown for in-situ progress used rf magnetron sputtering method. We investigated the dependence of the crystalline and electrical properties in the way of capacitors PZT thin films. Our results show that all PZT films indicated polycrystalline perovskite structure with preferred orientation (110) and no pyrochlore phase is observed. The electric properties of the Ru improved with increasing Ru thin films thickness. A well-fabricated Ru/PZT/Ru (100 nm) /$RuO_2$ capacitor showed a leakage current density in the order of $2.03{\times}10^{-7}$ $A/cm^2$ as a 50 kV/cm, a remnant polarization (Pr) of 9.22 ${\mu}C/cm^2$, and a coercive field (-EC) of -32.22 kV/cm. The results show that $Ru/Ru/RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

LTCC 기판에 성장시킨 PZT 박막의 열처리 조건에 따른 특성

  • Lee, Gyeong-Cheon;Hwang, Hyeon-Seok;Lee, Tae-Yong;Heo, Won-Yeong;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.14-14
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    • 2010
  • Recently, low temperature co-fired ceramic (LTCC) technology has gained a remarkable application potential in sensors, actuators and micro systems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of annealing treatment on the electrical properties of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. PZT thin films were deposited on Au / LTCC substrates by RF magnetron sputtering method. Then, the change of the crystallization of the films were investigated under various annealing temperatures and times. The results showed that the crystallization of the films were enhanced as increasing annealing temperatures. The film, annealed at $700^{\circ}C$, 3min, was well crystallized in the perovskite structure.

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Ultrasonic Sensors for Steel Structure Inspection (강구조물(鋼構造物) 진단(診斷)을 위한 초음파(超音波) 센서)

  • Shin, Byoung-Churl
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.2 no.2
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    • pp.170-176
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    • 1998
  • The team mixed PbO, $ZrO_2$, $TiO_2$, $Nb_2O_5$ and $MnCO_3$, to make $Pb[(Zr_{0.54}\;Ti_{0.46})\;Nb_{0.005}]O_3+4%MnCO_3$. The electroded PZT ceramics were poled by 3 kV/mm at $110^{\circ}C$ for 600 s. We assembled the 0.4mm thick PZT slices into ultrasonic transducers. Central frequency of the probe is 5 MHz, which is proper to the thickness gauge for steel pipes and for flaw detector. The probe can detect a disk shape defect of 1mm diameter at 15cm deep in steel block. The new probe's Fresnel zone that the ultrasonic beam do not broaden is 13mm. Over the Fresnel zone, the ultrasonic beam spreads. Half of the beam spread angle of the probe is $4.3^{\circ}-4.6^{\circ}$. This probe can be used for the ultrasonic transducers for non-destructive testing of steel bridges.

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Ferroelectric Properties of Sol-Gel Derived pb(Zr,Ti)$\textrm{O}_3$Thin Films (SoI-Gel법에 의한 Pb(Zr, Ti)$\textrm{O}_3$박막의 강유전체 특성)

  • Go, Ga-Yeon;Lee, Eun-Gu;Park, Jin-Seong;Lee, Jong-Guk;Lee, U-Seon;Lee, Jae-Gap
    • Korean Journal of Materials Research
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    • v.7 no.6
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    • pp.479-483
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    • 1997
  • Sol-gel법으로 제작한 여러 종류의 Zr/Ti비율을 갖고 있는 PZT박막의 전지적 특성과 신뢰성 특성을 상부 백금 전극을 sputtering으로 증착하고 Ar 기체로 반응성 이온 식각(RIE)방법으로 패턴을 형성한 후 열처리온도의 변화에 따라 조사하였다. Hysteresis loop특성을 되찾게 하였다. Zr/Ti 비율이 감소함에 따라 voltage shift가 증가하였으며 internal field가 없어지는 열처리 온도가 증가하였다. Zr/Ti비율이 감소함에 따라 초기 잔류 분극은 증가하였으나 switching 횟수가 증가됨에 따라 잔류 분극이 급속히 감소하였다.

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Structural and Dielectric Properties of Pb(zr0.2Ti0.8)O3 Thick Films Fabricated using a Screen Printing Technologies

  • Lee, Sung-Gap;Shim, Young-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.6
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    • pp.550-553
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    • 2005
  • [ $Pb(Zr_{0.2}Ti_{0.8})O_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/alumina substrates. The structural and dielectric properties were examined as a function of sintering temperature. The particle size distribution of the powder is bimodal with the mean particle size of about $1.2\;{\mu}m$. The average grain size of the PZT thick films sintered above $1000^{\circ}C$ was about $3.1\;{\mu}m$ and the thickness of the specimens was approximately $41\;{\mu}m$. The relative dielectric constant and dielectric loss of the thick films sintered at $1050^{\circ}C$ were 337 and $1.24\%$, respectively.