• 한국세라믹학회지
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• 제22권5호
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• pp.29-34
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• 1985

The PTCR characteristics of the $BaTiO_3$ as a function of the molten KCl and dopant $Sb_2O_3$ were investitated. When the weight ratio of KCl to raw materials was above 0.1, $BaTiO_3$ was synthesized by calcining at 80$0^{\circ}C$ for 6 hrs. As the amount of the KCl increased the resistivity of the $BaTiO_3$ at room temperature incr-eased. This can be explained by charge compensation effect between electrons and holes and with microstruc-tures change of the specimens. The resistivity of the $BaTiO_3$ decreased with increasing amount of $Sb_2O_3$. In the time-current characteristics initial current decreased with increasing the ratio of KCl to raw materials but initial current increased and then decreased with the increase of the dopant $Sb_2O_3$. These results of the time-current characteristics can be explained by the resistivity-temperature characteristics.

• 한국세라믹학회지
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• 제40권10호
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• pp.921-924
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• 2003

A current-voltage relation for Positive Temperature Coefficient of Resistance (PTCR) ceramic was derived and compared with the experimental data. The new current-voltage relation was developed based on Heywangs double Schottky barrier model and a bias distribution across the grain boundary. The voltage limitation V < 4${\Phi}$$\sub$b/ suggested by Heywang is no longer necessary in the new expression for the voltage dependence of the resistance. The pulsed voltages were applied to the PTCR ceramic specimen in order to avoid possible temperature variation during the measurement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.61-63
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• 2004

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength was lowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• 한국세라믹학회지
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• 제22권3호
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• pp.46-52
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• 1985

(Ba0.8. Sr0.2) $TiO_3$ semiconducting ceramic with and without Ti-excess composition were prepared by various sintering temperature. The effects of Ti compositions on the samples were discussed in terms of color micro-structure resistivity at room temperature and the positive temperature coefficient resistivity(PTCR). The 1.02mol Ti-excess composition provides better PTCR properties and has uniform micrositructures with 5-7${\mu}{\textrm}{m}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.35-38
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• 2005

The effect of reduction and re-oxidation firing on the PTCR properties of Sm-doped Barium Titanate ceramics was investigated for the application of multilayered PTC thermistor. The lattice parameter a, c decreases monotonically with increasing oxygen concentration in the reoxidation atmosphere, which seems to be related with the electrostatic Coulomb interaction between oxygen vancancy and nearest other atoms. With increasing oxygen concentration, the resistivity at room temperature and the magnitude of resistivity jump as a function of temperature increased in the region of oxygen concentration of 0 $\sim$ 10%. However, the resistivity at room temperature and the magnitude of resistivity jump is nearly constant and saturated in the region of oxygen concentration of 10 $\sim$ 20%. These phenomena is considered to be related with the variation of oxygen and barium-vancany concentration near the grain boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.181-181
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• 2007

PTCR 세라믹스를 적층형 부품으로 제조할 경우 소형화, 저 저항화 및 과전류 유입 시 빠른 응답특성을 갖는다는 장점을 가지고 있으며, 이러한 적층형 부품제조시에는 내부전극재가 부품소자의 물성에 중요한 영향을 미친다. 특히 우수한 옴성 접촉(Ohmic Contact)을 갖는 Zn, Fe, Sn, Ni 등의 적층 PTC용 전극재는 높은 산화특성으로 인해 재산화 과정에서의 비옴성 접촉(Non-ohmic contact)을 갖게 되어 PTC 특성을 저하시킬 우려가 있다. 따라서 본 연구에서는 적층형 PTCR 세라믹스의 내부전극재와 반도체 세라믹층의 동시소성거동 및 적층 PTCR 세라믹스의 전기적 특성을 평가하였다. 본 연구에 적용된 내부전극재로는 Ni 전극을 사용하였고, Ni 전극용 paste로는 무공제 paste, 반도체 세라믹공제 paste, $BaTiO_3$ 공제 paste의 3종 전극재가 이용되었다. 적층형 PTCR 세라믹스의 제조공정은 테이프 캐스팅(Tape casting), 내부전극인쇄, 적층 및 동시소성을 포함하는 적층화공정을 적용하였다. 각각의 전극 paste를 적용하여 제조된 chip은 미세구조관찰, I-V특성, R-T특성 등을 평가하여 내부전극내 세라믹공제의 영향을 고찰하였다.

• 한국세라믹학회지
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• 제24권1호
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• pp.63-69
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• 1987

Effect of MoO3 additiion on the semiconductive BaTiO3 ceramics doped with 0.2 mole% Nb2O5 and their frequency characteristics have been investigated on the view of intergranular barrier layer model through the observation of changes in their electrical properties. The resistivity increases with the increase of MoO3 addition, but the capacitance, the frequency dependence of capacitance and the effect of positive temperature coefficient of resistivity (PTCR) decrease. It is explained by the possible increase in the thickness of potential barrier due to the formation of insulating layer and thus decrease in the degree of energy band bending. Both the PTCR effect and resistivity decrease with the increase of frequency due to the possible elimination of barrier layer at the grain boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.288-288
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• 2007

본 연구에서 내환원성 $BaTiO_3$의 PTCR(Positive Temperation Coefficient Resistance) 특성 및 미세구조에 대한 분쇄 및 출발 원료들의 하소 조건의 영향을 연구하였다. $BaCO_3$, $TiO_2$, $CeO_2$를 Attrition milling 하여 1차 혼합 및 분쇄한 후 건조하여 혼합분말을 얻었으며, $(Ba_{1-x}Ce_x)TiO_3$를 합성하기 위하여 $1000^{\circ}C{\sim}1200^{\circ}C$ 공기중에서 하소하였다. 각 하소온도에서 제조한 $(Ba_{1-x}Ce_x)TiO_3$에 첨가제를 2차 혼합하고 초미분쇄하여 분말을 제조하였다. 직경 5mm 의 시편을 제조하여 환원 및 재산화 분위기에서 소결을 한 후 상온저항값 및 R-T특성을 측정하였고 SEM 을 통해 미세구조를 관찰하였다. 또한 하소 후 온도에 따른 상분석을 XRD를 통하여 분석하였다. 그 결과 하소온도가 증가함에 따라 상온저항값은 감소하는 경황을 보였으며 PTC특성은 감소하다가 증가하는 경향을 보였다. 초미분쇄에 따른 입자크기는 $1{\mu}m$이하로 작아졌으며 미립화가 됨에 따라 하소/소결온도에 앙향을 줄 것으로 사료된다.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.723-727
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• 2011

0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.