• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1809-1811
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• 2000

High power piezoelectric materials are presently being extensively developed for applications such as ultrasonic motors and piezoelectric transformer In this study, the piezoelectric and dielectric properties of $MnO_2$ doped $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ (hereafter PSNNT), which is the morphotropic phase boundary composition of the PSN-PNN-PT system were investigated. $MnO_2$-addition into the $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ composition increases the piezoelectric coefficient up to $k_{p}{\fallingdotseq}$55.6[%] and $Q_{m}{\fallingdotseq}$252. Moreover, $MnO_2$ addition makes tetragonal phase more stable with respect to rhombohedral phase.

• E2M - 전기 전자와 첨단 소재
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• 제3권3호
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• pp.233-241
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• 1990

본 연구에서는 xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-yBa(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-zPbTiO(0.50.leq.x.leq.0.60, 0.10.leq.y.leq.0.20, 0.20.leq.z.leq.0.40)세라믹을 1050.deg.C에서 2시간동안 유지시켜 일반소성법으로 제작하였다. 시편 제작시 조성은 조성변태 상경계부근을 선택하였으며 Ba(Zn$_{1}$3/ Nb$_{2}$3/)O$_{3}$ 고용량에 따른 purochlore상의 억제 및 그 영향을 조사하고 구조적, 유전적 및 압전적 특성을 측정하였다. X-선 회절분석 및 미세구조의 관찰 결과, Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량에 따라 pyrochlore상 및 미반응 물질등은 억제되어 0.20mol 고용된 시편에서는 균질한 perovskite상이 형성되었다. Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량이 증가함에 따라 유전상수는 증가하여 0.50PZN-0.20BZN-0.30PT시편의 경우 6880.9의 높은 값을 나타내었으며 정전용량의 온도계수는 감소하여 0.383[%/.deg.C]의 양호한 값을 나타내었다. 큐리온도는 PbTiO$_{3}$의 고용량이 0.20mol에서 0.40mol로 증가함에 따라 30.deg.C에서 170.deg.C로 증가하였다. 전기기계 결합계수 (K$_{p}$), 기계적 품질계수(Qm) 및 압전전하 계수 (d$_{33}$)는 조성변태 상경계 부근의 조성에서 크게 나타났으며 0.60PZN-0.15BZN-0.25PT 시편의 경우 각각 58.5%, 120.5, 150x$10^{-12}$[C/N]의 값을 나타내었다.다.다.

• 한국진공학회지
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• 제17권4호
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• pp.317-321
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• 2008

세라믹 강유전체 $0.65Pb(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ 고용체에 $ZrO_2$를 첨가하여 유전 및 초전 특성을 관찰하였다. 유전상수, 유전손실 및 초전계수의 측정온도는 상온에서 $250^{\circ}C$사이에서 측정되었다. 유전상수와 초전계수는 $0.2\;mol%ZrO_2$ 첨가에서 최대값을 얻었다. $ZrO_2$의 첨가량이 증가할수록 각 시료의 유전상수와 초전계수의 최대값은 낮은 온도로 이동하였고, 최대유전상수의 퍼짐현상은 증가하였다.

• 한국세라믹학회지
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• 제37권7호
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• pp.673-680
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• 2000

The effect of excess PbO(0, 1, 2, 4, and 8 mol%) on grain growth and densification of (65)Pb(Mg1/3Nb2/3)O3-(35)PbTiO3 [mol%] ceramics has been investigaetd. With increasing the amount of excess PbO and sintering time, densities of sintered samples decreased gradually. The samples containing less than 1 mol% of PbO showed normal grain growth behavior, however abnormal grain growth was observed to occur in the samples with more than 2 mol% of PbO. In the samples with more than 2 mol% of PbO, the number of abnormal grains decreased and thus the average grain size became smaller with increasing the amount of excess PbO. These results demonstrated that the abnormal grain growth started to occur when a critical amount of excess PbO was added to a (65)Pb(Mg1/3Nb2/3)O3-(35)PbTiO3 sample. Since PMN-PT grains in a liquid matrix were angular, the observed abnormal grain growth was explained to proceed through the two dimensional nucleation process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.65-67
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• 1990

In this study, (0.80-x)Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ 0.05$\leq$x$\leq$0.20) ceramics were fabricated by the mixed oxide method, the sintering temperature and time were 950∼1200[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. Dielectric constant of 0.70PMN-0.2PT-0.10PNW composition with repeated calcination was increased rapidly. Increasing the Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ contents from 0.05 to 0.20 [mol], phase transition temperature was shifted from 68 to 2[$^{\circ}C$] and dielectric constant was decreased while sintered density was increased. In the specimens containing 0.10, 0.15[mol] of PNW, dielectri constants at room temperature were exhibited the highest values 11199, 10114, respectively. Resistivity of specimens were $10^{10}$ ∼ $10^{12}$($\Omega$.m) and there was no dependence on sintering temperature and composition.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.110-115
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• 2000

$SrBi_2Ta_2O_9$ thin films were deposited at room temperature on the usual (111) oriented Pt bottom electrodes using r.f. magnetron sputtering, and then post-annealed at 650-$800^{\circ}C$ for 30min in oxygen flow. Low temperature processing which shows the preferred oriented SBT thin films was obtained by controlling the sputtering pressure and/or Sr content in target. The orientation and grain growth behavior of SBT thin films were dependent on Sr contents in films. With increasing the excess Bi content up to 50% in SBT thin films, it was possible to lower the onset temperature of grain growth. The c-axis preferred oriented SBT thin films were well-grown under the condition of low post-annealing($650^{\circ}C$) by lowering post-annealing pressure. After $10^{11}$ switching cycles, no polarization degradation was observed in both preferred oriented SBT capacitors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1713-1716
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• 1999

PSN-PT 2성분계 압전세라믹스의 상도로부터 유전적, 압전적 특성이 양호한 MPB (Morphotropic phase boundary)부근의 조성을 선택하여 도너 도펀트인 $Nb_2O_5$와 억셉터 도펀트인 $Fe_2O_3$를 각각 $0{\sim}9wt%$ 첨가하여 유전특성을 비교, 연구해보았다 시편모두 $1250^{\circ}C$이상에서 이론밀도의 96%이상의 값을 얻을 수 있었고 상온, 1kHz에서 $Fe_2O_3$의 경우 0.1wt% 첨가된 시편에서 ${\varepsilon}_r=2054$의 최대 비유전율이 나타났으며, 0.7wt% 첨가된 시편에서는 $tan{\delta}$=0.49%의 최소 유전 손실값을 얻었다. 도펀트가 첨가됨에 따라 ${\varepsilon}_r$는 점점 감소하는 경향을 보였으며 큐리온도 Tc는 $Fe_2O_3$의 경우에서 더 큰 값이 나타났다. $Nb_2O_5$의 경우 도펀트의 증가에 따라 완만한 Relaxor의 형태로 나타났다.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.157-159
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• 2000

Vanadate glass in the $Li_2O-P_2O_5-V_2O_5$ system with 60mol% $V_2O_5$ was prepared by melting the bath in pt. crucible followed by quenching on the copper plate. We found that $Li_2O-P_2O_5-V_2O_5$ glass ceramics obtained from nucleation of $Li_2O-P_2O_5-V_2O_5$ glass showed significantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_8$. In the present paper, We describe the charge/discharge properties during crystallization process and find the best crystallization condition of $Li_2O-P_2O_5-V_2O_5$ glass as cathode material. The Charge and discharge capacity of $Li_2O-P_2O_5-V_2O_5$ glass was about 220mAh/g for the cell heat-treated at $250^{\circ}C$ for 2.5hr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.42-45
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• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].