• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국재료학회지
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• 제17권11호
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Journal of Electrical Engineering and Technology
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• 제5권4호
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• pp.640-645
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• 2010

This paper describes the power generating property of hydrothermally grown ZnO nanorods on a flexible polyethersulfone (PES) substrate. The piezoelectric currents generated by the ZnO nanorods were measured when bending the ZnO nanorod by using I-AFM, and the measured piezoelectric currents ranged from 60 to 100 pA. When the PtIr coated tip bends a ZnO nanorod, piezoelectrical asymmetric potential is created on the nanorod surface. The Schottky barrier at the ZnO-metal interface accumulates elecntrons and then release very quickly generating the currents when the tip moves from tensile to compressed part of ZnO nanorod. These ZnO nanorods were grown almost vertically with the length of 300-500 nm and the diameter of 30-60 nm on the Ag/Ti/PES substrate at $90^{\circ}C$ for 6 hours by hydrothermal method. The metal-semiconductor interface property was evaluated by using a HP 4145B Semiconductor Parameter Analyzer and the piezoelectric effect of the ZnO nanorods were evaluated by using an I-AFM. From the measured I-V characteristics, it was observed that ZnO-Ag and ZnO-Au metal-semiconductor interfaces showed an ohmic and a Schottky contact characteristics, respectively. ANSYS finite element simulation was performed in order to understand the power generation mechanism of the ZnO nanorods under applied external stress theoretically.

• 전기학회논문지
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• 제63권11호
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• pp.1575-1581
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• 2014

In this paper, eddy current loss, iron loss and heat transfer of PMSG with 2,000kW capacities were analyzed for wind turbine. The PMSG with 3 split magnet was analyzed using ansoft maxwell commercial program and, generator was tested by Back to Back converter with no load condition at laboratory. Rotor surface temperature was measured by Pt100 sensors for investigating heat transfer from rotor to atmosphere. The simulation results shows 27.4kW eddy current loss in no load condition and 50.2kW eddy current loss in rated load condition with 3 split magnet, and also shows 4.3kW iron loss in no load condition and 7.3kW iron loss rated load condition. The heat transfer coefficient of convection between rotor surface and atmosphere was investigated by $9.6W/m^2{\cdot}K$. Therefore the heat transfer from rotor to atmosphere was about 17kW(54%) and from rotor to air-gap was about 14.6kW(46%) in no load condition. It is identified that the cooling system for stator have to include the 46% of iron loss, and heat dissipation structure of rotor surface have to be suggested and designed for efficiency improvement of generator.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• 한국식품과학회지
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• 제20권3호
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• pp.326-330
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• 1988

마이크로컴퓨터 코오지 배양시설을 제작하여 배양실내의 온도, 상대습도를 계측하고 코오지의 무게를 공정제어 대상으로 공정의 자동화를 시도하였다. 코오지 무게변화는 외팔보형 strain gauge 무게감응장치로 코오지 및 배양실의 온도는 백금저항선$(Pt,\;100\Omega)$ 센서로 계측하였다. 계측신호는 디지털화하여 MC6821 접속소자를 통해 마이크로컴퓨터로 입력되었다. 코오지 무게계측치를 공정의 제어대상으로 할 때 디지탈값(Y)과 코오지의 무게(W,g) 사이의 관계는 Y=0.310W+32.329(r=0.99989)이었다. 배양실내의 온도제어는 폐회로방식에 의하여 on/off로 이루어졌으며 습도제어는 계측된 건, 습구 온도값으로부터 계산된 습도값을 기준으로 살균수의 분무로 수행되었다.

• 한국식품과학회지
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• 제19권2호
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• pp.129-133
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• 1987

마이크로컴퓨터를 식품가공 공정및 연구에서 자료수집및 제어에 응용하기 위하여 Apple ll 컴퓨터에 접속가능한 접속장치(接續裝置)를 설계 제작하였다. 또한 식품의 여러 공정에 주요한 변수가 되는 온도 및 무게값을 전기적 신호로 감지하는 센서와 A/D변환기(變換器)의 적정 입력전압범위 전환을 위한 증폭회로를 구성하였다. 이들을 연결시켜 필요한 BASIC어(語) 프로그램을 작성하여 식품건조 장치의 온도및 무게값의 측정장치로 활용 가능함을 보였다. 컴퓨터를 응용함으로써 공정자료의 정확성과 신뢰성을 향상시키고 여러가지 공정변수를 다량 수집할 수 있게되고 수집된 많은 자료를 용이하게 저장, 분석할 수 있었다. 본 실험장치에 여러가지 목적에 따라 필요한 측정 센서를 개발하여 부착(附着)함으로 비단 온도와 무게 측정뿐 아니라 제반(諸般)식품(食品)제조 공정과 실험의 자동화에 활용할 수 있는 기초적인 자료를 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.337-337
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• 2012

Dye sensitized solar cell (DSSC) having high efficiency with low cost was first reported by Gr$\ddot{a}$tzel et al. Many DSSC research groups attempt to enhance energy conversion efficiency by modifying the dye, electrolyte, Pt-coated electrode, and $TiO_2$ films. However, there are still some problems against realization of high-sensitivity DSSC such as the recombination of injected electrons in conduction band and the limited adsorption of dye on $TiO_2$ surface. The surface of $TiO_2$ is very important for improving hydrophilic property and dye adsorption on its surface. In this paper, we report a very efficient method to improve the efficiency and stability of DSSC with nano-structured $TiO_2$. Atmospheric plasma system was utilized for nitrogen plasma treatment on nano-structured $TiO_2$ film. We confirmed that the efficiency of DSSC was significantly dependent on plasma power. Relative in the $TiO_2$ surface change and characteristics after plasma was investigated by various analysis methods. The structure of $TiO_2$ films was examined by X-ray diffraction (XRD). The morphology of $TiO_2$ films was observed using a field emission scanning electron microscope (FE-SEM). The surface elemental composition was determined using X-ray photoelectron spectroscopy (XPS). Each of plasma power differently affected conversion efficiency of DSSC with plasma-treated $TiO_2$ compared to untreated DSSC under AM 1.5 G spectral illumination of $100mWcm^{-2}$.