• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Analytical Science and Technology
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• v.33 no.1
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• pp.23-32
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• 2020

Methamphetamine (MA) is the most common and available drug of abuse in Korea and its primary metabolite is amphetamine (AP). Detection of AP derivatives, such as MA, AP, phentermine (PT), MDA, MDMA, and MDEA by the use of immunoassay screening is not reliable and accurate due to cross-reactivity and insufficient specificity/sensitivity. Therefore, the analytical process accepted by most urine drug-testing programs employs the two-step method with an initial screening test followed by a more specific confirmatory test if the specimen screens positive. In this study, a gas chromatography-mass spectrometric (GC-MS) method was developed and validated for confirmation of MA and AP in human urine. Urine sample (500 µL) was added with N-isopropylbenzylamine as internal standard and ethyl chloroformate as a derivatization reagent, and then extracted with 200 µL of ethyl acetate. Extracted samples were analysed with GC-MS in the SIM/ Scan mode, which were screened by Cobas c311 analyzer (Roche/Hitachi) to evaluate the efficiency as well as the compatibility of the GC-MS method. Qualitative method validation requirements for selectivity, limit of detection (LOD), precision, accuracy, and specificity/sensitivity were examined. These parameters were estimated on the basis of the most intense and characteristic ions in mass spectra of target compounds. Precision and accuracy were less than 5.2 % (RSD) and ±14.0 % (bias), respectively. The LODs were 3 ng/mL for MA and 1.5 ng/mL for AP. At the screening immunoassay had a sensitivity of 100% and a specificity of 95.1 % versus GC-MS for confirmatory testing. The applicability of the method was tested by the analysis of spiked urine and abusers' urine samples.

• Advances in Energy Research
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• v.4 no.2
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• pp.177-187
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• 2016

Ammonia borane $NH_3BH_3$ solubilized in organic solvent is a potential liquid-state chemical hydrogen storage material. In this study, metal acetylacetonates like $Fe(O_2C_5H_7)_3$, $Co(O_2C_5H_7)_2$, $Ni(O_2C_5H_7)_2$, $Pd(O_2C_5H_7)_2$, $Pt(O_2C_5H_7)_2$ and $Ru(O_2C_5H_7)_3$ are considered for assisting dehydrocoupling of ammonia borane in diglyme (0.135 M) at $50^{\circ}C$. The molar ratio between ammonia borane and metal acetylacetonate is fixed at 100. A protocol for the separation of the soluble and insoluble fractions present in the slurry is proposed; it consists in using acetonitrile to make the precipitation of metal-based compounds easier and to solubilize boron-based intermediates/products. The nature of the metal does not affect the dehydrocoupling mechanisms, the $^{11}B\{^1H\}$ NMR spectra showing the formation of the same reaction intermediates. The aforementioned metal acetylacetonates do mainly have effect on the kinetics of dehydrocoupling. Dehydrocoupling takes place heterogeneously and dehydrogenation of ammonia borane in these conditions leads to the formation of polyborazylene via intermediates like e.g., B-(cyclodiborazanyl) amine-borane and borazine. Our main results are reported and discussed herein.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.170-173
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• 2001

Thin films of phase-pure perovskite (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) were deposited in-situ onto Pt/Ti/ $SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. Two-step process to grow (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Electrical properties including dielectric constant, ferroelectric characteristics, crystallization and leakage current of PLT thin films were shown to be strongly inf1uenced by grain size. Also PLT thin films on p-type(100) Si substrate will be fabricated by pulsed laser deposition technique using a Nd:YAG laser with different wavelengths of 355, 532 and 1064 nm. Effect of the variation of laser wavelength on dielectric properties will be discussed. Microstructural and electrical properties of the film were investigated by C-V measurement leakage current measurement and SEM.ent and SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.317-322
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• 2003

Bismuth layered structure ferroelectric thin films, $Bi_4$$Ti_3$$O_{12}$ / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/$SiO_2$/Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. $Nb^{5＋}$ ion substitution for $Ti^{4＋}$ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with $Nb^{5＋}$ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.

• The Journal of Korean Obstetrics and Gynecology
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• v.19 no.3
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• pp.151-173
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• 2006

Purpose : This study was performed to evaluate anti-thrombotic and anti-inflammatory effects of BokbangHongdeungPaejangSan water extract (BHPS). Methods : BHPS was investigated using cultured cells and a murine models. As for the parameters of inflammation, levels of several inflammatory cytokines and chemical mediators which are known to be related to inflammation were determined in mouse lung fibroblast cells (mLFC) and RAW 264.7 cells. Results : In experiment of anti-thrombotic effect, BHPS inhibited the platelet aggregation induced by ADP and epinephrine, and inhibited pulmonary embolism induced by collagen and epinephrine. BHPS increased Platelet number and fibrinogen amount, and shortened PT and APTT in thrombus model induced by dextran. In experiment of anti-inflammatory effect, BHPS inhibited IL-1${\beta}$, IL-6, TNF-${\alpha}$, COX-2 and NOS-II mRNA expression in a concentration-dependent manner in RAW 264.7 cell line, and inhibited significantly NO production at 50, 100 ${\mu}g/ml$, and also inhibited ROS production in a concentration-dependent manner. BHPS inhibited IL-1${\beta}$, IL-6 and TNF-${\alpha}$ production significantly in serum of acute inflammation-induced Balb/c mice, and decreased IL-1${\beta}$, IL-6 and TNF-${\alpha}$ production in spleen tissue, but increased IL-1${\beta}$, IL-6 and TNF-${\alpha}$ production in liver tissue. BHPS increased survival rate at the 3th day in ICR mice with lethal endotoxemia induced by LPS. Conclusion : These results suggest that BHPS can be used for treating diverse female diseases caused by thrombosis and inflammation such as endometriosis, pelvic pain, cervicitis, pelvic inflammatory disease and pelvic tuberculosis and so forth.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.