• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.12-13
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• 2006

Ferroelectric Cerium-substituted $Bi_4Ti_3O_{12}$ thin films with a thickness of 200 nm were deposited using the liquid delivery metal organic chemical vapor deposition process onto a Pt(111)/Ti/$SiO_2$/Si(100) substrate. At annealing temperature above $600^{\circ}C$, the BCT thin films became crystallized and exhibited a polycrystalline structure. The BCT thin film annealed at $720^{\circ}C$ showed a large remanent polarization ($2P_r$) of $44.56\;{\mu}C/cm^2$ at an applied voltage of 5V. The BCT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied electric field of ${\pm}5\;V$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.382-383
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• 2006

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150~200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400{\sim}800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding. average grain size about 500~1000 nm influenced by annealing temperature. The piezoelectric properties of prepared SBN thin film, the remanent polarization value(2Pr) and coercive field was $1.2{\mu}C/cm^2$ and 2.15V/cm, respectively.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.258-261
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• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.171-171
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• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

• 한국수소및신에너지학회논문집
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• 제32권5호
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• pp.401-409
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• 2021

The combination of different concentrations of ZnSO₄ in acidic solution as electrolyte in Zn-air batteries was investigated by Zn symmetrical cell test, half-cell and full cell tests. Using 1 M ZnSO₄ + 0.05 M H₂SO₄ as electrolyte and MnO₂ as air cathode catalyst with Zn foil anode, this combination had a satisfactory performance with balance of electrochemical activity and stability. Its electrochemical activity was matched to or even better than the PtRu catalyst in different current density. And its cycle life was improved (more than 100 cycles stable) by suppressing the growth of zinc dendrites on anode obviously. This electrolyte overcame the shortcomings of alkaline electrolyte that are easy to react with CO₂ in the air, severely growth of Zn dendrites caused by uneven plating/stripping of Zn.

• Archives of Plastic Surgery
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• 제50권2호
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• pp.171-176
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• 2023

Background Human bite wounds in emergency department need evaluation in regard of reconstruction. These are due to occlusive bite injuries over face. Most commonly, human bites over face involve ear and nose, and may lead to avulsion injury. Defects over nose can be reconstructed immediately after debridement or delayed till the wound heals and scar becomes supple. Thorough wash and lavage with broadspectrum antibiotic cover has utmost importance in preventing cartilage infection. Methods We report 20 cases of human bite injuries over nose who presented to us in emergency department between 2018 and 2020. At the time of presentation the wound was assessed for closure. If not possible, patient was planned for delayed reconstruction after 3 months. In case delayed reconstruction was planned, the skin and nasal mucosa were approximated at first presentation. The patients underwent paramedian forehead flap after recreation of defect with conchal cartilage graft. Second stage of flap detachment and insetting was done after 3 weeks. After three weeks of second stage, third stage of flap thinning was done. Patients were followed for 3-6 months and subjective satisfaction was noted. Results Nineteen patients underwent delayed staged reconstruction with paramedian forehead flap and one underwent primary wound closure. The flap survival was 100%. The patient satisfaction was excellent in most cases. Conclusion We recommend delayed reconstruction for human bite nasal injuries. For reconstruction, paramedian forehead flap with conchal cartilage graft, if required, provides excellent reconstructive option with good contour and color match and minimal donor site scar.

• Journal of Electrochemical Science and Technology
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• 제14권1호
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• pp.15-20
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• 2023

Ionic liquids are considered as a promising, alternative solvent for the electrochemical synthesis of metals because of their high thermal and chemical stability, relatively high ionic conductivity, and wide electrochemical window. In particular, their wide electrochemical window enables the electrodeposition of metals without any side reaction of electrolytes such as hydrogen evolution. The electrodeposition of silver is conducted in 1-n-butyl-3-methylimidazolium chloride ([C4mim]Cl) ionic liquid system with a silver source of AgCl. This study is the first attempt to electrodeposit silver nanoparticles without using co-solvents other than [C4mim]Cl. Pulse electrolysis is employed for the synthesis of silver nanoparticles by varying applied potentials from -3.0 V to -4.5 V (vs. Pt-quasi reference electrode) and pulse duration from 0.1 s to 0.7 s. Accordingly, the silver nanoparticles whose size ranges from 15 nm to ~100 nm are obtained. The successful preparation of silver nanoparticles is demonstrated regardless of the kinds of substrate including aluminum, stainless steel, and carbon paper in the pulse electrolysis. Finally, the antimicrobial property of electrodeposited silver nanoparticles is confirmed by an antimicrobial test using Staphylococcus aureus.

• 대한환경공학회지
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• 제29권5호
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• pp.577-583
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• 2007

다양한 산업체에서 배출되는 독성오염물질들을 제어하는 기존의 기술이 안고 있는 일부 단점을 보완하기 위하여 전이금속 지지체로 구성된 스테인레스스틸-백금 촉매를 이용하는 열촉매 시스템을 구축하고 다섯 가지의 염소계 탄화수소[chlorobenzene(CHB), chloroform(CHF), perchloroethylene(PCE), 1,1,1-trichloroethane(TCEthane), trichloroethylene(TCE)]의 열촉매 분해효율을 평가하기 위해서 본 연구가 수행되었다. 또한, 본 연구는 촉매독이 열촉매 분해 효율에 미치는 영향을 평가하였다. 열촉매 시스템의 주요 세 가지 운전인자인 유입농도, 소각 온도 및 촉매시스템내 체류시간이 본 연구에서 고려되었다. 유입농도가 증가함에 따라 염소계탄화수소의 분해효율이 최대 100%에서 오염물질의 종류에 따라 최저 0%(CHB) 가까이로 감소하는 것으로 나타났다. TCEthane을 제외한 네 가지 염소계탄화수소의 분해효율은 온도 증가에 따라 100% 가까게 나타났으나, TCEthane의 분해효율은 온도가 증가해도 거의 변화가 없는 것으로 나타났다. TCEthane을 제외한 조사대상물질에 대하여 촉매시스템내의 체류시간이 10초에서 60초로 증가시 오염물질에 따라 30%에서 97%까지 점진적으로 증가하는 경향을 나타내었지만, TCEthane은 체류시간 30초에서 분해효율이 더 이상 증가하지 않았다. 이러한 결과는 체류시간 길이가 항상 분해효율과 비례하는 것이 아님을 제안한다. 결론적으로, 본 연구 결과는 염소계 탄화수소를 보다 고효율로 제어하기 위해서 전이금속 촉매시스템을 적용할 경우에 유입농도, 반응온도, 그리고 촉매시스템내 체류시간과 더불어 제어하고자하는 오염물질의 종류도 함께 고려되어야 할 것을 제안한다. 한편으로, 황화메틸 1.0 ppm을 첨가함으로서 조사대상오염물질의 분해효율이 $0\sim50%$로 감소하는 결과가 나타났지만, 일반적으로 산업 배기가스에서 측정되는 황화합물의 오염도 수준보다 다소 낮은 농도에 해당하는 황화메틸 0.1 ppm을 오염물질에 첨가하였을 때는 오염물질의 분해효율에 영향이 나타나지 않았다.

• 한국재료학회지
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• 제12권12호
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.