• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.401-405
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• 1994

The chemical composition and electrical properties were investigated for epitaxially crystallized $(Ba_{0.5}Sr_{0.5})Tio_3$ (BST) films deposited on Pt and $YBa_Cu_3O_{7-x}$(YBCO) electrodes by laser ablation technique. The crystalline quality of the heteroepitaxial BST films deposited on Pt bottom electrode was found to be better than that of BST film on YBCO electrode by the RBS analysis. Films deposited at $600^{\circ}C$ on Pt electrode showed a dielectric constant of 320 and a dissipation factor of 0.023 at 100kHz. Leakage current density of BST films on Pt electrode was smaller than that on YBCO bottom electrode. Their leakage current density was about 0.8$\mu \; A/ \textrm{cm}^2$ at an applied electric field of 0.15MV/cm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.177-184
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• 1996

We adopted the $Pt/SiO_{2}/Si$ and the $Ir/SiO_{2}/Si$ substrates of which buffer layer is $PbTiO_{3}$ to improve electrode and interfacial properties of PZT thin film deposited by reactive sputtering method using metal target in this study. We got PZT thin film to have highly oriented(100) structure and good crystallinity using buffer layer in Pt bottom-electrode, though randomly oriented PZT thin film was obtained without buffer layer. Although great improvement of PZT phase formation on Ir bottom-electrode with buffer layer was not observed, we observed the increase of remennant polarization and the decrease of coercive field compared with properties of PZT thin films on the Pt bottom-electrode. So we got the results of the increase of dielectric constant using buffer layer on fabrication of PZT thin film and the better dielectric properties in PZT thin film using Ir bottom-electrode compared with that using Pt bottom-electrode.

• Food Science and Preservation
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• v.15 no.3
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• pp.461-468
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• 2008

To obtain basic da1a on the preparation of Cudrania tricuspidata leaves tea, the quality and anti-oxidative characteristics of dried raw leaves (RT), pan-fired leaves tea (PT) and fermented leaves tea (FT) were investigated. General characteristics of RT, PT and FT, respectively, were: moisture content 18.47, 6.23 and 8.50%; crude protein content 17.77, 20.46 and 19.13%; and carbohydrate content 54.42, 62.52 and 61.96%. The crude lipid and ash contents were in the range 0.05 - 0.07% and 9.27 -10.74% respectively; the water soluble solid content was in the order FT > PT > RT and ranged from 23.10 - 37.38%; there were no significant differences in the total polyphenol content (815.24 - 835.16 mg%). Although $L^*$ values of PT (20.94) and FT (20.85) were lower than those of RT (34.71), the $a^*$ value in PT and the $b^*$ value in FT were highest. In all ethanol extracts the reducing power, electron-donating ability and superoxide dismutase (SOD)-like activity increased in a concentration-dependent manner. Furthermore, the activity in FT was higher than in PT or RT. The total free amino-acid content was higher in FT (1429.93 mg%) than RT (1108.94 mg%) or PT (833.13 mg%). The major amino acids were L-asparagine and L-valine in RT, L-cysteine and L-glutamic acid in PT and L-proline in FT. In a sensory evaluation of PT and FT, bitter and astringent tastes were decreased relative to RT, while sweet and savory tastes, flavor, color and overall acceptability were increased. These results indicate that FT bas a higher antioxidant effect and free-amino-acid content than PT, while the sensory quality of FT is similar to that of PT.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3331-3337
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• 2012

Ru-modified Pt nanoparticles of various sizes on platelet carbon nanofiber toward methanol oxidation were investigated in terms of particle size effect. The sizes of Pt nanoparticles, prepared by polyol method, were in the range of 1.5-7.5 nm and Ru was spontaneously deposited by contacting Pt nanoparticles with the Ru precursor solutions of 2 and 5 mM. The Ru-modified Pt nanoparticles were characterized using transmission electron microscopy, X-ray photoelectron spectroscopy and cyclic voltammetry. The methanol oxidation activities of Ru-modified Pt nanoparticles, measured using cyclic voltammetry and chronoamperometry, revealed that when the Pt particle size was less than 4.3 nm, the mass specific activity was fairly constant with an enhancement factor of more than 2 at 0.4 V. However, the surface area specific activity was maximized on Pt nanoparticles of 4.3 nm modified with 5 mM Ru precursor solution. The observations were discussed in terms of the enhancement of poison oxidation by Ru and the population variation of Pt atoms at vertices and edges of Pt nanoparticles due to selective deposition of Ru on the facets of (111) and (100).

• Journal of Environmental Science International
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• v.20 no.2
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• pp.251-260
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• 2011

$TiO_2$- and $SiO_2$-supported $Co_3O_4$, Pt and $Co_3O_4$-Pt catalysts have been studied for CO and $C_3H_8$ oxidations at temperatures less than $250^{\circ}C$ which is a lower limit of light-off temperatures to oxidize them during emission test cycles of gasoline-fueled automotives with TWCs (three-way catalytic converters) consisting mainly of Pt, Pd and Rh. All the catalysts after appropriate activation such as calcination at $350^{\circ}C$ and reduction at $400^{\circ}C$ exhibited significant dependence on both their preparation techniques and supports upon CO oxidation at chosen temperatures. A Pt/$TiO_2$ catalyst prepared by using an ion-exchange method (IE) has much better activity for such CO oxidation because of smaller Pt nanoparticles, compared to a supported Pt obtained via an incipient wetness (IW). Supported $Co_3O_4$-only catalysts are very active for CO oxidation even at $100^{\circ}C$, but the use of $TiO_2$ as a support and the IW technique give the best performances. These effects on supports and preparation methods were indicated for $Co_3O_4$-Pt catalysts. Based on activity profiles of CO oxidation at $100^{\circ}C$ over a physical mixture of supported Pt and $Co_3O_4$ after activation under different conditions, and typical light-off temperatures of CO and unburned hydrocarbons in common TWCs as tested for $C_3H_8$ oxidation at $250^{\circ}C$ with a Pt-exchanged $SiO_2$ catalyst, this study may offer an useful approach to substitute $Co_3O_4$ for a part of platinum group metals, particularly Pt, thereby lowering the usage of the precious metals.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1786-1790
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• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1263-1269
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• 1996

반도체 메모리 소자에 이용되는 하부전극의 Pt 박막을 MOCVD 증착방법을 이용하여 SiO2(100nm)/Si 기판위에 증착하였다. 반응개스로 O2개스를 사용하였을 경우에 순수한 Pt 박막을 얻었으며 증착층은(11)우선방향을 가지고 성장하였다. 증착온도가 45$0^{\circ}C$에서는 결정립 경계에 많은 hole이 형성되어 박막의 비저항을 증가시켰다. MOCVD에 의해 얻어진 Pt 박막은 전 증착온도범위에서 인장응력을 가지고 있었으며 40$0^{\circ}C$이상의 온도에서 hole이 형성되면서 응력은 감소하였다. MOCVD-Pt 위에 PEMOCVD로 증착한 강 유전체 SrBi2Ta2O9박막은 균일하고 치밀한 미세구조를 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.152-155
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• 1996

Platinum thin films were deposited on $Al_2$O$_3$substrate by DC magnetron sputtering for RTD(Resistance Thermometer Devices) temperature sensors. We made Pt resistance pattern on $Al_2$O$_3$substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied lineally within the range of measurement temperature. At annealing temperature of 100$0^{\circ}C$, annealing time of 240min and thin film thickness of 1${\mu}{\textrm}{m}$, we obtained Pt-RDT TCR value of 3825ppm/$^{\circ}C$ closed to the Pt bulk value.