• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.52-57
• /
• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Journal of the Korean Magnetics Society
• /
• v.20 no.6
• /
• pp.222-227
• /
• 2010

$BiFeO_3$ (BFO) thin films were deposited on Pt/Ti/$SiO_2$/Si(100) substrates by RF magnetron sputtering method at room temperature. The influence of the flow rate of $O_2$ gas on the preparation of $BiFeO_3$ thin films was studied. XRD results indicate that the $BiFeO_3$ thin films were crystallized to the perovskite structure with the presence of small amount of impurity phases. The flow rate of $O_2$ gas has great affect on the microstructures and magnetic properties of $BiFeO_3$ thin films. As flow rate of $O_2$ gas increased, roughness and grain size of the thin films increased. $BiFeO_3$ thin films exhibited weak ferromagnetic behavior at room temperature. The PFM images revealed correlation between the surface morphology and the piezoresponse, indicating that the piezoelectric coefficient is related to microstructure.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.33 no.5
• /
• pp.778-784
• /
• 2004

This study was conducted to investigate the application possibility of leaf and stem extract (LSE) from the mixture of leaf and stem of Panax ginseng. This study measured the general nutritional composition, aminoacid minerals contents and fatty acid composition of LSE. We conducted analysis of the ginsenoside content by HPLC and the cell cytotoxicity tests in normal liver and kidney cells. The approximate composition of LSE was 2.51% of carbohydrate 0.53% of crude ash,0.20% of crude fat and 0.15% of crude protein, respectively. LSE contained 102.56 mg/100 g of K ion and high contents of acidic amino acids such as glutamic acid and aspartic acid. In addition to this, it contained all essential amino acids. The major compositions of fatty acids were 39.99% of palmitic acid 14.96% of linoleic acid, 13.31% of docosatetranoic acid and 12.91% of linolenic acid, The total ginsenoside was 0.82 mg/mL, and ratio of PD/PT was 0.68. Negative effects were not found from the results of the cell toxicity respection. These results imply that leaf and stem of Panax gineng could be used as possible food resources and functional food material and feed stuff.

• Journal of Applied Biological Chemistry
• /
• v.63 no.4
• /
• pp.387-392
• /
• 2020

Pseudomonas tolaasii is a pathogen causing brown blotch disease in cultivated mushrooms. In previous study, various strains of P. tolaasii were isolated from the mushrooms with disease symptoms and they were further divided into Ptα, Ptβ, and Ptγ subtypes according to the 16S rRNA gene analysis. To investigate the secretion of peptide toxins, tolaasin and its analog peptides, culture extracts of Pt group strains were analyzed by gel permeation chromatography. Those of Ptα subtype strains contained two chromatographic peaks, band A and B. Meanwhile, those of Ptβ and Ptγ subtype strains contained mainly band A component and a little of band B. Molecular weights of toxic peptides of culture extracts were measured by MALDI-TOF mass spectrometry. In Ptα subtype strains, the peptide compositions of band A and B were same including tolaasin I (1,987 Da), tolaasin II (1,943 Da), and its two analog peptides, 1,973 Da and 2,005 Da. The strains of Ptβ and Ptγ subtype secreted many components of MW 1,100-1,200 Da, but they did not synthesize any tolaasin-like peptides. These results suggest that the only Ptα subtype strains secrete tolaasin and its analog peptide toxins and the strains of Ptβ and Ptγ subtypes have different pathogenic characters causing brown blotch disease.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.367-371
• /
• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.257-257
• /
• 2016

최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.401-405
• /
• 2016

The cobalt silicides were investigated for employment as a catalytic layer for a DSSC. Using an E-gun evaporation process, we prepared a sample of 100 nm-thick cobalt on a p-type Si (100) wafer. To form cobalt silicides, the samples were annealed at temperatures of $300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 30 minutes in a vacuum. Four-point probe, XRD, FE-SEM, and CV analyses were used to determine the sheet resistance, phase, microstructure, and catalytic activity of the cobalt silicides. To confirm the corrosion stability, we also checked the microstructure change of the cobalt silicides after dipping into iodide electrolyte. Through the sheet resistance and XRD results, we determined that $Co_2Si$, CoSi, and $CoSi_2$ were formed successfully by annealing at $300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$, respectively. The microstructure analysis results showed that all the cobalt silicides were formed uniformly, and CoSi and $CoSi_2$ layers were very stable even after dipping in the iodide electrolyte. The CV result showed that CoSi and $CoSi_2$ exhibit catalytic activities 67 % and 54 % that of Pt. Our results for $Co_2Si$, CoSi, and $CoSi_2$ revealed that CoSi and $CoSi_2$ could be employed as catalyst for a DSSC.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.5
• /
• pp.193-196
• /
• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.10
• /
• pp.646-650
• /
• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.21 no.1
• /
• pp.15-23
• /
• 2005

The purpose of this study was to evaluate effect of aging and thermocycling on the tensile strength of restorative composite resins. Eight commercially available light-cured restorative composites (Heliomolar: HM, Palfique Estelite: PE, Spectrum: ST, UniFil-F: UF, Z100: ZH, Clearfil AP-X: CA, P60: PS, and Palfique Toughwell: PT) were selected as experimental materials. Rectangular-shaped tensile test specimens were fabricated in a teflon mold giving 5 mm in gauge length and 2 mm in thickness. All samples were stored in distilled water at $37^{\circ}C$ for 100 days. Every 10 days, specimens were thermocycled for 1,000 cycles with 15 seconds of dwelling time in each $5^{\circ}C$ and $55^{\circ}C$ water baths. Tensile testing was carried out at a crosshead speed of 0.5 mm/min and fracture surfaces were observed with a scanning electron microscope. The results obtained were summarized as follows; 1. The strength degradation of thermocycled group was severer than that of the aged group (P<0.01). 2. The tensile strength of the CA and ST groups were significantly higher than that of other groups after thermocycling treatment (P<0.05). 3. Fracture surfaces showed that the composite resin failure developed along the matrix and the filler/resin interface region.