• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

• Food Science and Preservation
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• v.1 no.2
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• pp.99-105
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• 1994

To convert the analog signal from the drying process into the digital signal, the interface circuit was designed and built. To measure the weight and temperature during drying process, strain gauge type load cell and temperature transducer composed of pt 100 $\Omega$ thermometers and wheatstone bridge circuits were built and used. The temperature control device was composed of photocoupler and triac. Microcomputer aided experimental convective drying system was built with above cricuits and devices. Drying characteristics of onions can be estimated using this system.

• Journal of Electrochemical Science and Technology
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• v.1 no.2
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• pp.69-74
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• 2010

Methodologies to improve photovoltaic performance of dye-sensitized solar cell (DSSC) are reviewed. DSSC is usually composed of a dye-adsorbed $TiO_2$ photoanode, a tri-iodide/iodide redox electrolyte and a Pt counter electrode. Among the photovoltaic parameters of short-circuit photocurrent density, open-circuit voltage and fill factor, short-circuit photocurrent density is the collective measure of light harvesting, charge separation and charge collection efficiencies. Internal quantum efficiency is known to reach almost 100%, which indicates that charge separation occurs without loss by recombination. Thus, light harvesting efficiency plays an important role in improvement of photocurrent. In this paper, technologies to improve light harvesting efficiency, including surface area improvement by nano-dispersion, size-dependent light scattering efficiency, bi-functional nano material, panchromatic absorption by selective positioning of three different dyes and transparent conductive oxide (TCO)-less DSSC, are introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.333-334
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• 2008

The SCT thin films were deposited on Pt-coated electrode using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[$^{\circ}C$]. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The maximum dielectric constant of SCT thin film was obtained by annealing at $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.649-652
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• 1999

The (Ba, Sr)TiO$_3$(BST) thin films were fabricated on Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with substrate temperature by XRD, SEM, EDS and AES depth profils. Increasing the substrate temperature, barium multi titanate phases were decreased. The BST thin film had a structure of perovskite type, and had peaks of (100), (200) at the substrate temperature of 50$0^{\circ}C$. When the BST thin films were deposited at the substrate temperature of 50$0^{\circ}C$, the composition ratio of Ba/sr was 52/48.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.147-148
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• 2006

Sl-Thyristor는 기존의 Power semlconductor인 단일 IGBT,MOSFET과 비교하여 높은 정격 전압과 대전류의 소호가 가능하며 빠른 turn on swithcing time을 가지는 특성이 있다. 하지만 게이트 드라이버를 이용한 Sl-Thyristor의 turn on 구동시에는 전압구동의 특성과 turn 0ff시에는 전류 구동의 특성에 가까운 구동 특성이 요구되기 때문에 스위칭 요구 특성에 맞는 게이트 드라이버의 설계 및 제어가 쉽지 않다. 본 논문은 펄스 파워 어플리케이션으로 Sl-Thyristor(PT-201 5kV/100A)를 사용하여 pulsed power moduiator용 Sl-Thyristor의 게이트 드라이버의 요구인 빠른 turn on switching 특성과 turn off 시 Si-Thyristor 내의 전하를 빨리 제거하기 위한 조건을 제시하고 있다.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.8
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• pp.213-220
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• 2003

By the localization of electro-chemical dissolution region, we succeeded in a few micrometer size hole drilling on stainless steel with the radial machining gap of about 1 ${\mu}{\textrm}{m}$. Tens of nanosecond duration voltage pulses were applied between WC micro-shaft and stainless steel in the 0.1 M $H_2SO_4$ solution. Pt balance electrode was used to drill the high aspect ratio micro-hole without generation of Cr oxide layer on the machined surface. The effects of applied voltage, pulse duration, and pulse period on localization distance were investigated according to machining time. We suggested the taper reduction technique especially brought up on blind-hole machining. High quality micro-holes with 8 ${\mu}m$ diameter with 20 ${\mu}m$ depth and 12 ${\mu}m$ diameter with 100 ${\mu}m$ depth were drilled on 304 stainless steel foil. The various hole shapes were also produced including stepped holes and taper free holes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.409-415
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• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.571-574
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• 2000

In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.