• 제어로봇시스템학회:학술대회논문집
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• 1991.10b
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• pp.1956-1960
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• 1991

This paper describes the measured results upon monochromatic light, compound light, and light emanated from light emitting diodes by a simplified wavemeter with a semiconductor color sensor. Since a single unit element of a semiconductor color sensor with two PN junction photodiodes has been developed, the author has fabricated the simplified wave detector by using the element. The simplified wive detector has been measured results upon monochromatic light, compound light, and light emanated from light emitting diodes. Since luminescent color of each diode locates in luminosity region, comparison of measured values of PD-150 and PD-151 resulted no remarkable difference in averaged wave length. As for monochromatic light, PD-151 showed very cross value to the color filter peak value rather than PD-150. As for compound light, PD-150 has shown such influence of long wave length light which reaches to near infrared ray with respect to PD-151.

• Journal of Ceramic Processing Research
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• v.21
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• pp.23-27
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• 2020

The enhanced optical output power of AlGaN/GaN deep ultraviolet light-emitting diodes (UV LEDs) were demonstrated by using the breakdown-induced conductive channels (BICCs). The BICCs could be made by electrical reverse biasing between two adjacent contact pads formed on top p-type layers with a certain distance, causing an electrical breakdown of pn junction and hence a generation of conductive channels. Accordingly, the reflective Ni/Ag/Pt electrodes could be formed simultaneously on the top p-type layer and the other p-type layer with the BICCs, acting as the p- and n-contacts, respectively. The deep UV LEDs fabricated with the BICCs produced the enhanced optical output power by 15 % as compared to the reference LEDs, which were fabricated with the conventional Ti/Al/Ti/Au layers formed on mesa-etched n-type layer. This could be due to the reduced light absorption at the n-contact pads, indicating that the use of BICCs will be very suitable for obtaining better output performance of deep UV emitters.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.363-366
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• 1996

A FB-ZVS(Full Bridge Zero Voltage Switching) PWM DC/DC converter for electric vehicles is simulated and implemented in this paper. The converter considered is a step-down DC/DC converter with the ratings of 312/13.5V and 1.35kW. The steady state operation of this converter is divided into six operating modes in case of continuous current mode and eight operating modes in case of discontinuous current mode. Digital simulations using PSpice are carried out to verify the steady-state analysis. A prototype converter was built in the laboratory. MOSFETs were used for swithching devices and fast recovery diodes to reduce the charge storage problem of a pn-junction.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2366-2373
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• 2007

In this paper, a low-power and small-area asynchronous 1 kilobit EEPROM for passive UHF RFID tag chips is designed with $0.18{\mu}m$ EEPROM cells. As small area solutions, command and address buffers are removed since we design asynchronous I/O interface and data output buffer is also removed by using separate I/O. To supply stably high voltages VPP and VPPL used in the cell array from low voltage VDD, Dickson charge pump is designed with schottky diodes instead of a PN junction diodes. On that account, we can decrease the number of stages of the charge pump, which can decrease layout area of charge pump. As a low-power solution, we can reduce write current by using the proposed VPPL power switching circuit which selects each needed voltage at either program or write mode. A test chip of asynchronous 1 kilobit EEPROM is fabricated, and its layout area is $554.8{\times}306.9{\mu}m2$., 11% smaller than its synchronous counterpart.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.145-151
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• 2004

This paper presents a fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diodes and tuning rage is 5.01∼5.30 GHz with 0∼3 V control voltage. For improved phase noise performance, a LC filtering technique is adapted. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is excellent performance. Moreover phase noise is improved by 5 dB after employing the LC filter. It is the first experimental result in field of InGaP/GaAs HBT VCOs. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1092-1095
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• 2001

Steady state thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin with a thickness of 25${\mu}$m. It was assumed that the generated heat which is mainly by the on-state voltage drop, 9V for 12kV diode, is dissipated by way of the conduction through diodes layers to bonding wire and of the convection at the surface of passivating resin. It was predicted by the thermal analysis that the temperature rise of a pn junction of the 12kV diode can reach at the range of 16∼34$^{\circ}C$ under the given boundary conditions. The thickness and thermal conductivity(0.3∼3W/m-K) of the passivating resin did little effect to lower thermal resistance of the diode. As the length of the bonding wire increased, which means the distance of heat conduction path became longer, the thermal resistance increased considerably. The thermal analysis results imply that the generated heat of the diode is dissipated mainly by the conduction through the route of diode-dummy wafer-bonding wire, which suggests to minimize the length of the wire for the lowest thermal resistance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.127-132
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• 2003

This paper presents a new model that can precisely simulate the attenuation characteristics of the voltage-controlled PIN diode attenuators. After carefully investigating the problems in the conventional PIN diode models, a new PIN diode model was proposed and verified with experimental data. The proposed model is well operated when it is used in the voltage-controlled mode as well as current-controlled mode, and is simple and straightforward model, since the PN junction diode of this model has the same curve as that of the PIN diode. This model is very effective to design voltage-controlled attenuator and its implementation in commercial simulators is simple and accurate. This model will allow RF and Microwave designers to better use the PIN diodes in various circuits.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.1-5
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• 2012

This paper describes a 150-Mb/s monolithic optical receiver for plastic optical fiber link using a standard CMOS technology. The receiver integrates a photodiode using an N-well/P-substrate junction, a pre amplifier, a post amplifier, and an output driver. The size, PN-junction type, and the number of metal fingers of the photodiode are optimized to meet the link requirements. The N-well/P-substrate photodiode has a 200-${\mu}m$ by 200-${\mu}m$ optical window, 0.1-A/W responsivity, 7.6-pF junction capacitance and 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link with -10.4 dBm of optical sensitivity. The receiver occupies 0.56-$mm^2$ area including electrostatic discharge protection diodes and bonding pads. To reduce unnecessary power consumption when the light is not over threshold or not modulating, a simple light detector and a signal detector are introduced. In active mode, the receiver core consumes 5.8-mA DC currents at 150-Mb/s data rate from a single 3.3 V supply, while consumes only $120{\mu}W$ in the sleep mode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1308-1313
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• 2004

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.326-332
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• 2016

A novel CMOS temperature sensor with binary output is implemented by using fully differential switched-capacitor circuits for resistorless implementation of the temperature sensor core. Temperature sensing is based on the temperature characteristics of the pn diodes implemented by substrate pnp transistors fabricated using standard CMOS processes. The binary outputs are generated by using the charge-balance principle that eliminates the division operation of the PTAT voltage by the bandgap reference voltage. The chip was designed in a MagnaChip $0.35-{\mu}m$ CMOS process, and the designed circuit was verified using Spectre circuit simulations. The verified circuit was laid out in an area of $950{\mu}m{\times}557 {\mu}m$ and is currently under fabrication.