• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.123-124
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• 2006

본 연구에서는 KOH 용액을 사용한 Si 습식 이방성 식각실험 진행 후, 나타나는 표면의 거친 현상을 완화하는 데에 중점을 두고 연구를 진행하였다. 이를 위해 $SiO_2$ 웨이퍼 위에 Photo-lithography 공정으로 형성시킨 PMER 패턴을 Mask로 사용하여 HF 용액으로 $SiO_2$를 식각시켰으며, 형성된 $SiO_2$를 Mask로 사용하여 KOH 용액으로 Si을 식각시켰다. 이 때, KOH와 혼합하는 용액으로 IPA와 Ethan이을 각각 사용하여 실험을 진행하였으며, ESEM을 이용하여 표면을 비교하였다.

• 반도체디스플레이기술학회지
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• 제3권1호
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• pp.27-30
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• 2004

In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

• 마이크로전자및패키징학회지
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• 제13권2호
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• pp.9-13
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• 2006

COF에 사용되는 구리배선은 폴리이미드 필름에 subtractive 방법을 이용하여 만들어지고 있으나 선폭이 작아짐에 따라 subtractive 방법은 폭방향으로 에칭 현상으로 인하여 사용에 제한이 되고 있다. Semi-additive 방법은 리소그래피 공정과 전기도금범을 사용하여 구리배선을 만드는 방법으로 $10-40{\mu}m$의 좁은 선폭에 대한 연구를 하였다. AZ4620과 PMER900의 두꺼운 PR을 사용하였으며 전기도금법을 이용하여 구리 배선을 형성하였다. 기존의 용액은 높은 잔류응력으로 인하여 구리도금층에 crack이 발생하였으며 via filling에 사용된 도금액을 사용한 경우 잔류응력이 낮아서 crack이 없는 구리배선을 얻을 수 있었다. 기지층의 에칭시 배선의 폭방향으로의 에칭 현상은 관찰되지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1050-1053
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• 2002

This paper presents metal structure that is fabricated using UV-LIGA process with PMER N-CA3000. In order to fabricate metal structure with high aspect ratio, the systematic optimization method was adopted and then the structure of $36{\mu}m$ thick mold with aspect ratio 7:1 (trench) and $32{\mu}m$ thick nickel structure was obtained. This structure is applied to the fabrication of optical switch.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1914-1917
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• 2001

3D Feed Horn Shape MEMS Antenna Array는 적외선 이미지 소자 또는 Tera hertz band 등에서 많은 응용을 할 수 있는 장점을 가진 MEMS 구조체 이다. 하지만 일반적인 MEMS 공정을 이용해서 3D Feed Horn Shape MEMS antenna array를 구현하기는 적합하지 않았다. 본 논문에서는 마스크와 웨이퍼가 일체 된 형태의 경사된 척이 초 저속으로 회전하면서 노광을 할 수 있는 새로운 방식과 미러 반사구조를 이용해서 평행광을 얻을수 있는 노광장치 (MRPBI : Mirror Reflected Parallel Beam Illuminator) System제작방법을 제안하였다. 3D Feed Horn Shape MEMS Antenna의 구조적인 high apect ratio의 특성에 의해서 SU-8과 PMER Negative Photo resist를 이용한 기본적인 실험을 통해 3D 구조체의 구현 가능성을 증명하였다. 또한 Microbolometer의 성능향상을 위한 이론적인 3D MEMS Antenna Model들을 HFSS(High Frequency Structure Simulator)을 이용해서 그 최적구조를 제안하고 3D MEMS Antenna Gain 값을 비교 분석하였다.

• 한국레이저가공학회지
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• 제3권2호
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• International Journal of Precision Engineering and Manufacturing
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• 제3권1호
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• 한국정밀공학회지
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• 제17권11호
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• pp.191-198
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• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.