• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.984-987
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• 2003

The electrophosphorescent emission properties were investigated in polymer light-emitting diodes (PLEDs) based on a poly(9-vinylcarbazole) (PVK) doped with a green phosphorescent dye of fac-tris(2-phenylpyridine) iridium (III) [$Ir(ppy)_3$]. A green light peaked at 516 nm was emitted from devices with a configuration of ITO/PEDOT:PSS/PVK:$Ir(ppy)_{3}$/BCP/$Alq_{3}$/LiF/Al. The optimal doping concentration of $Ir(ppy)_{3}$ in PVK was found at 2% by weight, under which maximum current efficiency of 24.3 cd/A and peak external quantum efficiency of 6.8% were achieved at the high luminance of 4240 $cd/m^{2}$. The external quantum efficiency of 5% and current efficiency of 18 cd/A can be sustained even at the very high luminance of 35000 $cd/m^{2}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.277-278
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• 2005

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.465-465
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• 2008

Conjugated polymers have attracted much scientific and technological research interest during the past few decades because of their potential use such as polymer light-emitting diodes (PLEDs).1,2 Particularly, lots of phenylene-based polymers such as polyfluorene and its derivatives have been synthesized because of their high photoluminescence quantum efficiencies and thermal stabilities. However, troublesome long wavelength emission in polymer film of polyfluorenes on heating during device formation or operation has been the crucial problem for practical applications. The source of the long wavelength emission was initially believed to be solely due to excimer emission as a result of polymer aggregation. It has also recently been correlated with emissions from ketonic defects in the fluorene units. Many efforts have been made to reduce the tendency to red-shifted emission. Here, we report for the first time the design and synthesis of novel 9,9-spiro bifluornene-based polymers containing heteroatoms such as N, S in its molecular skeleton. Especially, the 9,9-spiro bifluornene-based polymers containing N atom showed stable blue electroluminescence, which did not show spectral change upon thermal annealing.

• 폴리머
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• 제36권4호
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• pp.519-524
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• 2012

공액고분자 전해질 전자수송층을 이용하는 고분자 발광소자의 정전용량을 측정하는 것은 전류밀도-전압-발광특성을 측정하는 방법과 더불어 전자수송층으로서 공액고분자 전해질의 기능을 이해하기 위한 소자물리 연구에서 중요한 정보를 제공해준다. 본 연구에서는 고분자 전해질의 반대 이온의 종류에 따라 저주파수 영역에서 정전용량의 거동이 변화하는 것으로부터 전하 주입의 메카니즘에서 차이점이 있음을 분석하였다. 정전용량 모델을 이용한 분석은 전자주입 메카니즘이 음극/전자수송층/발광층 사이의 계면에서 발생하는 쌍극자 배열 또는 전하수송체의 축적에 의한 것임을 나타내었다.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.539-544
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• 2010

We have synthesized new blue electroluminescent polyalkylfluorene-based copolymers [poly(F-co-Py)x:y, where x:y = 99:1 or 95:5 mole ratios] containing the hole-injecting pyrazole derivative [3,3'-(4,6-bis(octyloxy)-1,3-phenylene)bis(1,5-diphenyl-4,5-dihydro-1H-pyrazole] through Ni(0) mediated polymerization, and their electroluminescent properties were investigated. Electroluminescent (EL) devices were fabricated with ITO / PEDOT:PSS (110 nm) / copolymers or PF homopolymer (80 nm) / Ca (50 nm) / Al (200 nm) configuration. Each EL device constructed from the copolymer exhibited significantly enhanced brightness and efficiency compared with a device constructed from the PF homopolymer. The EL device constructed with poly(F-co-Py)99:1 exhibited the highest luminous efficiency and brightness (0.95 cd/A and $2,907\;cd/m^2$, respectively). The achieved luminous efficiency was an excellent result, providing almost a 4-fold improvement on the efficiency obtainable with the a PF homopolymer device. This enhanced efficiency of the copolymer devices results from their improved hole injection and more efficient charge carrier balance, which arises from the HOMO level (~5.83 eV) of the poly(F-co-Py)99:1 copolymer, which is higher than that of the PF homopolyme (~5.90 eV).

• 한국재료학회지
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• 제19권6호
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• pp.313-318
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• 2009

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

• 한국정밀공학회지
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• 제30권6호
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• pp.589-595
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• 2013

Solution processed conjugated molecules enable to manufacture various electronic devices by unconventional and cost effective patterning methods as screen or gravure printing. Spin-coating is the most popularly used method to form conjugated polymeric film for various electronic devices. The coating method has certain disadvantages such as a large amount of unwanted wastes, difficulty forming a film with a large area, and impossible to apply roll-to-roll manufacturing. We present here a promising alternative coating method, bar-coating for conjugated polymer film and OLED with the bar coated light emitting layer. In this papers, we show atomic force microscope images of spin- and bar-coated Poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT) films on substrate. The bar-coated film showed a slight lower RMS roughness (1.058 [nm]) than spin-coated film (1.767 [nm]). It means the bar-coating is suitable method to form light emitting layers in OLEDs. By using bar-coating process, an OLED obtained with 4.7 [cd/A] in maximum current efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.362-363
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• 2012

A new cross-linkable polymer, cross-linked d-PBAB, which has the triphenylamine as the hole transporting moiety and ethynyl group as the thermal cross-linker is firstly synthesized by the combination of anionic polymerization and deprotection process. The thermal cross-linking reaction was performed at $240^{\circ}C$ for 50 min and cross-linked d-PBAB layer showed smooth surface and is not soluble at organic solvent under spin-coating of emitting layer (EML). The solution-processed PLED which was fabricated with cross-linked d-PBAB as HTL showed approximately two times higher Lmax and four times higher LEmax than those obtained from PLED with PEDOT:PSS as the HTL. These result is ascribed to better ability of cross-linked d-PBAB to block electrons and to prevent exciton-quenching than those of PEDOT : PSS at the EML interface. This results strongly suggested that cross-linked d-PBAB can be a promising material to replace conventional PEDOT : PSS. It can be suspected that PLEDwith cross-linked d-PBAB would show longer lifetime compared with that of PLED with PEDOT : PSS, and thus further studies are under investigation.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.399-405
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• 2013

Two series of new green phosphorescent polymers bearing a bis(2-phenyl-pyridine)iridium(III)(dibenzoylmethane) [$(ppy)_2Irdbm$] complex were designed and synthesized. Poly-carbazole (PCbz) derivative or polyfluorene with pendant carbazole groups (PFCbz) were employed as host polymers for the iridium complex. The iridium complex monomer was copolymerized with the host monomers using varying monomer ratios via a Yamamoto coupling reaction. Efficient energy transfer from host to dopant unit was observed by increasing the ratio of the iridium guest in the copolymers. Electroluminescent devices with the configuration ITO/PEDOT:PSS/polymer/BmPyPB/LiF/Al were fabricated and characterized. The phosphorescent polymers composed of the iridium complex guest and polyfluorene with carbazole pendants as a host performed better than the polymers composed of the same guest and the main chain polycarbazole host. A maximum external quantum efficiency of 0.73%, a luminous efficiency of 1.21 cd/A, and a maximum luminance of 372 $cd/m^2$ were obtained from a device fabricated using one of the synthesized copolymers.

• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.49-53
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• 2008

The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.