• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.458-460
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• 2008

Four kinds of copolymers with fluorene and biphenylamine units were synthesized by palladium-catalyzed polycondensation reaction. These polymers were characterized in terms of their UV/Visible and photoluminescence (PL) properties in solution and film state. These polymers were also studied as a hole transporting material in the polymer light emitting diode (PLED) devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.141-143
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• 2002

Litrex Ink Jet equipment offers prospect for reliable and low cost manufacturing process for PLED technology. The design concept of 140P system that we are developing meets requirement of process/equipment for PLED manufacturing line in terms of higher mechanical accuracy, in-line monitoring system of print head, high precision of process capability, reasonable through-put, high reliability/easier maintenance and no particle generation.

• Journal of Information Display
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• v.5 no.2
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• pp.14-18
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• 2004

The most significant degradation problem of PLED has been described and new buffer layer material aimed for use as HTL in PLED to solve this issue has been studied. This approach has enabled the increase of the green device efficiency (${\sim}$2x) and lifetime (${\sim}$5-6x).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1082-1085
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• 2003

본 연구에서는 고분자를 사용하여 만든 유기EL소자인 PLED (Polymer Light Emitting Diode)의 제조공정 변화에 따른 소자성능을 연구하였다. PLED의 제작은 크게 ITO 기판 제작, 발광층 및 전극 증착 등의 공정으로 나누어진다. ITO 기판은 사진식각공정으로, 발광층의 증착은 스핀코팅법으로, 전극은 진공증착법으로 각각 제작하였다. 코팅 시 스핀속도 및 점도 조절을 통하여 발광층의 두께를 조절하였고, 스핀코팅 후 건조방법에 따라서 표면의 uniformity와 발광특성을 비교해 보았다. 실험결과 특정 두께에서 발광특성이 우수하게 나타나는 것을 확인할 수 있었다. 그리고 건조방법에 따라 발광층의 표면 uniformity에 차이가 있었으며, 표면 uniformity에 따라 diode의 I-V 특성 경향이 달리 나타났다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.89-90
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• 2007

본 연구에서는 ITO/PEDOT:PSS/PFO-poss/LiF/Al 구조를 갖는 고분자 유기발광다이오드(PLED)를 제작하여 ITO 투명 전도막의 전처리 효과가 유기발광 다이오드의 특성에 미치는 영향에 대하여 조사하였다. 최적의 전처리 조건을 찾기 위하여 다양한 플라즈마 처리 조건에 다른 ITO 투명전도막의 표면형상의 변화와 전기적 특성을 관찰하였다. 또한 ITO 투명전도막에 플라즈마 처리와 열처리를 실시하여 PLED 소자를 제작하고 전기 광학적 특성을 조사하여 ITO 투명 전도막의 전처리가 소자의 특성에 미치는 영향을 조사하였다.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.294-300
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• 2010

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to $553\;cd/m^2$ and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were $1724\;cd/m^2$ and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.37-42
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• 2007

We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.155-159
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• 2005

In this report, Polymer light emitting diodes (PLEDs) with an ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared by spin coating method on the glass substrate patterned ITO (indium tin oxide), using PEDOT:PSS(poly(3,4=ethylenedioxythiophene):poly(styrene sulfolnate)) as the hole transfer material and MEH-PPV(poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene)) having a different concentration (0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt$\%$) as the emitting material. The electrical and optical properties of the prepared PLED samples were investigated. The good electrical and optical properties were observed for the PLED samples with a MEH-PPV concentration ranging from 0.5 to $0.9 wt\%$. However, the current and luminance values for PLED sample with $1.5 wt\%$ of MEH-PPV decreased greatly. The maximum luminance and light efficiency for the PLEDs with concentration of $0.5 wt\%$ MEH-PPV were $409 cd/m^2$ and 4.90 Im/W at 9 V, respectively. The emission spectrums were found to be $560{\~}585 nm$ in wavelength showing orange color.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1511-1513
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• 2005

The polymer-light emtting diodes(PLEDs) were comprised a design of OLED array, process develop by using ITO thin glass, and fabrication of PDMS stamp by using nanocontact printing. In the study, we describe a different approach for building OLEDs, which is based on physical lamination of thin metal electrodes supported by a PDMS stamp layer against an electroluminescent organic. We develop that devices fabricated in this manner have better performance than those constructed with standard processing techniques. The lamination approach avoids forms of disruption that can be introduced at the electrode organic interface by metal evaporation and has a reduced sensitivity to pinhole or partial pinhole defects. Also, it is easy to build patterned PLED with feature sizes into the nanometer regime. This method provides a new route to PLED for applications ranging from high performance displays to storage and lithography systems, and PLED can used for organic electronics and flexible display.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.373-374
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• 2007

We have fabricated polymer light-emitting diodes(PLED) in a structure of Glass/ITO/PVK/Al. Poly(N-vinylcabazole) (PVK) was deposited on the ITO glass with the spin coating method. PVK thickness is respectively 500nm, 300nm, 250nm and 200nm with the spin coter rotation speed of 2000, 3000, 4000 and 5000rpm. V-I, wavelength-transmittance, P-L and SEM of the fabricated devices were measured. From the result of P-L measurement, it was kept the optic properties of PVK raw powder when PVK thickness is 250nm. The knee-voltage of PVK PLED with 250nm thickness was 7V.