• Journal of the Korean Vacuum Society
• /
• v.16 no.3
• /
• pp.192-196
• /
• 2007

ZnSe/CdSe/ZnSe single quantum wells with different well thickness were grown by hot wall epitaxy. The quantum well thicknesses were measured by TEM. The critical thickness of single quantum well layer was found to be about $9{\AA}$ from the intensities and the full-width at half maximum of photoluminescence(PL) spectra. When the thickness of quantum wells was less than the critical thickness, the Stoke's shift was confirmed from the comparison between PL and photoluminescence excitation spectra, and it may be due to the exciton binding energy. The PL peak energy dependence on the quantum well thickness was coincident with the theoretical values.

• Journal of the Korean Ceramic Society
• /
• v.38 no.3
• /
• pp.261-266
• /
• 2001

적색 CaTiO$_3$:Pr 형광체 막을 졸-겔법으로 제조하고 형광체의 결정상 및 발광특성에 미치는 열처리 조건 및 Pr 첨가량의 영향에 대하여 연구하였다. CaTiO$_3$:Pr sol로부터 제조된 CaTiO$_3$:Pr 분말은 30~60nm 크기의 입자들이 0.3~0.5$mu extrm{m}$ 크기로 응집된 상태를 나타내었으며, 한편 sol을 borosilicate 기판 위에 4000rpm의 속도로 3회 스핀 코팅하고 열처리하였을 경우 두께 1.2$\mu\textrm{m}$의 CaTiO$_3$:Pr 박막이 형성되었다. CaTiO$_3$:Pr gel 분말을 여러 온도에서 열처리한 경우, $600^{\circ}C$ 이하에서는 비정질이지만, 온도가 증가하면서 erovskite 결정상이 생성되기 시작하여 90$0^{\circ}C$에서는 우수한 perovskite 결정상이 발달되었다. 반면, 박막의 경우에는 80$0^{\circ}C$의 열처리 온도에서는 결정성이 우수한 perovskite 상이 관찰되었으며 이러한 온도는 기존의 분말법의 소결온도에 비하여 300~40$0^{\circ}C$나 낮은 것이다. 0.2 mol% Pr이 첨가되고 90$0^{\circ}C$로 열처리된 분말시편은 최적의 Photoluminescence (PL) 특성을 나타낸 반면, 박막의 경우에는 80$0^{\circ}C$에서 열처리된 시편이 최적의 PL 특성을 나타내었다. 제조된 CaTiO$_3$:Pr 박막에 대하여 Cathodoluminescence (CL) 분석을 행한 결과, 6100$\AA$에서 폭이 좁고 강도가 큰 스펙트럼을 나타냄으로서, 본 실험에서 제조된 박막이 FED(field emission display)등의 적색형광체로 사용될 수 있음을 확인하였다.

• Journal of the Korean Vacuum Society
• /
• v.6 no.4
• /
• pp.337-342
• /
• 1997

We have investigated Mossbauer effect and emission properties of the Fe-doped GaAs grown by liquid phase epitaxy (LPE). The powder type of isotope $^{57}Fe$ was used as a dopant source in LPE-GaAs. From the analysis of Mossbauer effect the value of isomer shift, 0.303$\pm$0.018 mm/sec, is calculated at low temperature. This means that charge state of Fe ion in GaAs is 3+. The results of double crystal x-ray rocking curve (DCRC) and low temperature photoluminescence (PL) show the crystal quality of the epitaxial layers are good. Unusual luminescence peaks from the Fe-GaAs epitaxial layers appeared at emission energy of 0.99 eV and 1.15 eV. We attribute these emissions to Fe-acceptor related two deep radiative centers.

• KSBB Journal
• /
• v.15 no.6
• /
• pp.649-657
• /
• 2000

The factors affecting the back-extraction efficiency of Bovine Serum Albumin (BSA, Mw. 65kDa, pl 4.9) solubilized in an AOT reverse micellar solution, prepared by the injection method, to an excess aqueous phase were investigated. In particular, the effects of pH, the types of salts, alcohols added as cosurfactants, and their concentrations in the aqueous phase were examined. Furthermore, by comparing the CD spectra of the back-extracted BSA and the feed BSA, the structural changes of BSA during the extraction process were determined. The addition of 1:1 salt such as KCl or NaCl to the aqueous phase resulted in almost a 100% extraction to the aqueous phase at a pH higher than its isoelectric point pl. This high efficiency of back-extraction might be due to the change in the interactions between the protein and micellar aggregates driven by the added salt. For 1:2 salts like $CaCl_2$ and $MgCl_2$, BSA was back-extracted with lower than 20% extraction efficiency. Maximum extraction efficiencies were attained at about pH=7 and pH=8 for monovalent and divalent salts, respectively. The addition of alcohols as cosurfactants led to an improvement in monovalent and divalent salts, respectively. From the CD spectra of BSA extracted to the aqueous phase, it was observed that denaturation of BSA was not significant. In certain back-extraction conditions, the extracted BSA showed even higher activity than the feed BSA.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.22 no.4
• /
• pp.361-368
• /
• 2002

The aim of this study was to investigate the effect of preprocessing the transmitted energy spectrum data on development of a robust model to predict the sugar content in intact apples. The spectrum data were measured from 120 Fuji apple samples conveying at the speed of 2 apples per second. Computer algorithms of preprocessing methods such as MSC, SNV, first derivative, OSC and their combinations were developed and applied to the raw spectrum data set. The results indicated that correlation coefficients between the transmitted energy values at each wavelength and sugar contents of apples were significantly improved by the preprocessing of MSC and SNV in particular as compared with those of no-preprocessing. SEPs of the prediction models showed great difference depending on the preprocessing method of the raw spectrum data, the largest of 1.265%brix and the smallest of 0.507% brix. Such a result means that an appropriate preprocessing method corresponding to the characteristics of the spectrum data set should be found or developed for minimizing the prediction errors. It was observed that MSC and SNV are closely related to prediction accuracy, OSC is to number of PLS factors and the first derivative resulted in decrease of the prediction accuracy. A robust calibration model could be d3eveloped by the combined preprocessing of MSC and OSC, which showed that SEP=0.507%brix, bias=0.0327 and R2=0.8823.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.113-113
• /
• 2003

ZnO 박막은 p형 도핑방법이 점차 알려 지면서 최근 차세대 발광소자 재료로서 주목을 받고 있으며, 우수한 전자 이동도, 우수한 홀 이동도, 발광 스펙트럼(PL) 피크의 날카로움, 높은 free exciton binding energy, 방사선 노출에 대한 큰 내구성, 습식 식각이 가능, 동종 기판 사용이 가능함으로써 박막의 품질을 개선할 수 있고 제조공정을 간소화할 수 있는 등의 장점을 지니고 있어 이에 관련된 많은 연구들이 진행되고 있다. 특히 ZnO 박막을 차세대 발광소자로 응용하기 위해서는 고품질의 에피탁시 박막을 성장시켜야 하며 이를 위하여 MBE, MOCVD, PLD법 등 다양한 에피탁시 박막증착이 시도되고 있다. 또한 보다 양질의 ZnO 박막을 성장시키기 위해 적절한 단결정 기판 및 버퍼층의 탐색과 각 기판에 따른 ZnO 박막의 물성평가 작업도 진행되고 있다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.175-175
• /
• 2003

ZnO 박막은 그 동안 어려운 문제로 여겨진 p형 도핑방법이 점차 알려 지면서 발광소자 적용 가능성이 주목받고 있다. ZnO는 발광 스펙트럼(PL) 피크의 날카로움, 높은 exciton 결합에너지, 습식식각의 가능, 벽개면 형성의 용이함 및 동종 기판 적용 가능 등의 본질적인 장점을 지니고 있어 재현성있는 p형 도핑방법 기술이 확립된다면 이를 이용한 발광소자 적용 시 기존의 질화물계에 비하여 우수한 소자 제조 가능성이 있다. 이에 따라 국내외에서 ZnO 박막제조에 관련된 많은 연구들이 진행되고 있다. 특히 ZnO 박막을 발광소자로 적용하기 위해서는 고품질의 에피탁시 박막을 성장시켜야 하며 이를 위하여 MBE, MOCVD, PLD법 등 다양한 에피탁시 박막증착이 시도되고 있다. 또한 보다 양질의 ZnO 박막을 성장시키기 위해 적절한 단결정 기판 및 버퍼층의 탐색과 각 기판에 따른 ZnO 박막의 물성평가 작업도 국내외의 여러 연구그룹에서 진행되고 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.218-218
• /
• 2010

본 연구에서는 투명 전극 대체 물질로써 유망한 ZnO의 전기적 특성 향상을 위하여 IV족 원소인 Si을 1, 3, 5 wt% 첨가하여 SZO 박막을 제작하여 dopant의 앙, 온도 변화에 따른 전기적, 광학적, 구조적 특성을 분석하였다. Rf-magnetron sputtering system을 이용하여 slide glass위에 증착 하였으며 $100{\sim}500^{\circ}C$ 온도 변화를 주었다. 결정성 분석을 위한 XRD 분석 결과 온도 증가에 따라 (002) peak의 세기가 증가하며, Si 첨가량과 관계없이 동일한 2 theta에서 peak가 관측되었다. 미세 구조 분석 결과 입자 크기 또한 온도 증가에 따라 증가함을 확인하였으며, 박막 두께는 대략 300nm로 확인하였다. 모든 SZO 박막은 가시광선 영역에서 80% 이상의 투과율을 보였으며 PL 분석 결과 Si 첨가량과 관계없이 동일한 스펙트럼을 가지며 380 nm, 540 nm 근처에서 peak를 확인하였다. 최소 비저항 값은 5SZO 막에서 $2.44{\times}10^{-3}\;{\Omega}cm^{-1}$을 보였다.

• Clean Technology
• /
• v.27 no.2
• /
• pp.146-151
• /
• 2021

Pure and Sm ion doped BiVO₄ catalysts were synthesized using a conventional hydrothermal method and characterized by XRD, DRS, SEM, and PL. We also examined the activity of these materials on the photocatalytic decomposition of rhodamine B under visible light irradiation. The doping of Sm ion into BiVO₄ catalyst changed the ms-BiVO₄ crystal structure into the tz-BiVO₄ crystal structure in the low synthesis temperature. Light absorption analysis using DRS showed that all the catalysts displayed strong absorption in the visible range of the electromagnetic spectrum regardless of Sm ion doping. In addition, an amorphous morphology was shown in the pure BiVO₄ catalyst, but the morphology of the BiVO₄ catalyst doped with Sm ion was changed into an ellipse shape and also the particle size decreased. In the photocatalytic decomposition of rhodamine B, Sm ion doped BiVO₄ catalyst showed higher photocatalytic activity than the pure BiVO₄ catalyst. In addition, the Sm3-BVO catalyst doped with 3% Sm ion showed the highest photocatalytic activity, as well as the highest formation rate of OH radicals (•OH) and the highest PL peak. This result suggests that the formation rate of OH radicals produced in the interface between the photocatalyst and water is well correlated with the photocatalytic activity.

• Journal of Sensor Science and Technology
• /
• v.12 no.6
• /
• pp.273-281
• /
• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.