• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• 한국결정성장학회지
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• 제5권2호
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• pp.87-93
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• 1995

Floating zone법으로 strontium titanate 단결정을 육성하였다. 성장조건은 공기 분위기하에서 성장속도 3mm/hr, 상부축 회전속도 20~25rpm, 하부축 회전속도 15~20rpm이었으며 육성한 단결정은 옅은 갈색을 띄고 있었으며 투명하였고 annealing 후 색깔이 옅어짐을 확인할 수 있었다. 성장방위는 [112] 방향이었으며 XRD, EDS로 화학양론적인 조성은 $SrTiO_3$단일 결정상임을 알 수 있었다. $350^{\circ}C$, KOH용액에서 5분동안 chemical etching하여 etch pit pattern을 조사하였으며 상온하에서$350^{\circ}C$의 온도 범위에서 유전상수 값을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.55-58
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• 2002

PIT method which is used at fabricating Bi-2223/Ag HTS wire includes a drawing process, conventional deformation method. Drawing of meta1(Ag) and ceramic (BiSrCaCuO) composite is also difficult and significant for uniform deformation. In this paper, parameters of uniform deformation was studied at Bi-2223/ Ag multifilamentary HTS wire. Powder and rod as a starting precursor was compared at 55 filament and 54 filament Bi-2223/Ag HTS wire, respectively. Micro-hardness and area COV of the filaments was also evaluated when the diameters were decreased through drawing operations.

• 한국초전도ㆍ저온공학회논문지
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• 제8권1호
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• pp.1-4
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• 2006

The $MgB_2$ tapes with several metal powder addition were fabricated by PIT method with or without heat treatment. The $J_c$ value of $5.600A/cm^2$ and $16.000A/cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol % of Cu added $MgB_2$ tape without heat treatment respectively. The $J_c$ value of $8.000A/cm^2$ and $35,000A/cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c-B$ curve shows enhancement in $J_c$ under magnetic field. which suggests enhancement in workability and grain connectivity with several metal powder addition.

• 한국막학회:학술대회논문집
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• 한국막학회 1996년도 춘계 총회 및 학술발표회
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• pp.1-4
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• 1996

유화제의 물리화학적인 성질을 이용하여 O/W와 W/O에멀젼을 제조하는 방법(예:PIT method, D-phase method)은 이제까지 많은 연구가 진행되어 왔으며, colloid mill, homogenizer, ultrasonic emulsifier와 같은 유화장치도 지속적으로 개발 및 개선되고 있다. 하지만 이들 방법은 공정의 정확한 조절이 어려우며, 제조된 에멀젼의 입자크기 분포가 다분산적(polydispersed)이라는 단점을 가지고 있다. 이를 극복하기 위한 방법으로 1980년대 중반에 일본에서 처음으로 개발된 막유화법이 있다. 이 기술은 pouous glass membrane 가운데 기공크기(pore size)가 균일한 SPG(Shirasu Porous Glass)막을 사용하여 균일한 입자분포를 가지는 에멀젼을 제조하는 것이다. 한편 막유화에 사용되는 막이 갖추어야 할 조건은 다음과 같다.

• 한국정밀공학회지
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• 제18권8호
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• pp.174-181
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• 2001

Nowadays, the improvement and development of Multi-media and information & communication technology is rapidly processed. They need large data storage capacity. So that, many studies and researches in data storage have been carried out. According to them, the data storage capacity has been increased. But the limitation of storage capacity is happened for several problems. One of them is spot & pit size in optical and magnetic data storage and another is the resolution of actuators. The problems in spot & pit size are covered by new data storage methods-- for examples, AFM(Atomic Force Microscopy), MO(Magneto-optical) system, and NFR(Near-Field decoding) system etc. But the resolution limit of an actuator was not developed and doesn\`t follow up the development of spot & pit size. Because of them, we should improve a resolution of an actuator. Especially, in this paper an actuator if studied and designed for NFR (in using SIL(Solid Immersion Lens) system. It is a dual stage actuator, which consists of a Fine actuator and a Coarse actuator. and should desire 100nm accuracy. Its actuating force generation method is VCM(Voice Coil Motor). The Fine actuator is composed of 4-leaf springs and a bobbin wrapped by coil. The Coarse actuator has Coils and 3-Roller bearings. Also, The Characteristics of designed actuator for NFR system is estimated by Sine-Swept mode and LDV(Laser Doppler Vibro-meter).

• Structural Engineering and Mechanics
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• 제60권5호
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• pp.809-828
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• 2016

In deep open pit mines, slope stability is very important. Particularly, increasing the depths increase the risks in mines having weak rock mass. Blasting operations in this type of open pits may have a negative impact on slope stability. Several or combination of methods can be used in order to enable better analysis in this type of deep open-pit mines. Numerical modeling is one of these options. Many complex problems can be integrated into numerical methods at the same time and analysis, solutions can be performed on a single model. Rock failure criterions and rock models are used in numerical modeling. Hoek-Brown and Mohr-Coulomb terms are the two most commonly used rock failure conditions. In this study, mine planning and discontinuity conditions of a lignite mine facing two big landslides previously, has been investigated. Moreover, the presence of some damage before starting the study was identified in surrounding structures. The primary research of this study is on slope study. In slope stability analysis, numerical modeling methods with Hoek-Brown and Mohr-Coulomb failure criterions were used separately. Preparing the input data to the numerical model, the outcomes of patented-blast vibration minimization method, developed by co-author was used. The analysis showed that, the model prepared by applying Hoek-Brown failure criterion, failed in the stage of 10. However, the model prepared by using Mohr-Coulomb failure criterion did not fail even in the stage 17. Examining the full research field, there has been ongoing production in this mine without any failure and damage to surface structures.

• 한국재료학회지
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• 제25권1호
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• pp.1-8
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• 2015

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.