• Journal of Life Science
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• v.28 no.10
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• pp.1140-1146
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• 2018

Dual-specificity phosphatases (DUSPs) play a role in cell growth and differentiation by modulating mitogen-activated protein kinases. DUSPs are considered targets for drugs against cancers, diabetes, immune diseases, and neuronal diseases. Part of the DUSP family, DUSP19 modulates c-Jun N-terminal kinase activity and is involved in osteoarthritis pathogenesis. Here, we report screening of cavity-creating mutants and the crystal structure of a cavity-creating L75A mutant of DUSP19 which has significantly enhanced enzyme activity in comparison to the wild-type protein. The crystal structure reveals a well-formed cavity due to the absent Leu75 side chain and a rotation of the active site-bound sulfate ion. Despite the cavity creation, residues surrounding the cavity did not rearrange significantly. Instead, a tightened hydrophobic interaction by a remote tryptophan residue was observed, indicating that the protein folding of the L75A mutant is stabilized by global folding energy minimization, not by local rearrangements in the cavity region. Conformation of the rotated active site sulfate ion resembles that of the phosphor-tyrosine substrate, indicating that cavity creation induces an optimal active site conformation. The activity enhancement by an internal cavity and its structural information provide insight on allosteric modulation of DUSP19 activity and development of therapeutics.

• The Korean Journal of Physiology and Pharmacology
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• v.17 no.3
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• pp.203-208
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• 2013

As the abnormal proliferation of vascular smooth muscle cells (VSMCs) plays a critical role in the development of atherosclerosis and vascular restenosis, a candidate drug with antiproliferative properties is needed. We investigated the antiproliferative action and underlying mechanism of a newly synthesized naphthoquinone derivative, 5,8-dimethoxy-2-nonylamino-naphthalene-1,4-dione (2-nonylamino-DMNQ), using VSMCs treated with platelet-derived growth factor (PDGF). 2-Nonylamino-DMNQ inhibited proliferation and cell number of VSMCs induced by PDGF, but not epidermal growth factor (EGF), in a concentration-dependent manner without any cytotoxicity. This derivative suppressed PDGF-induced $[^3H]$-thymidine incorporation, cell cycle progression from $G_0/G_1$ to S phase, and the phosphorylation of phosphor-retinoblastoma protein (pRb) as well as the expression of cyclin E/D, cyclin-dependent kinase (CDK) 2/4, and proliferating cell nuclear antigen (PCNA). Importantly, 2-nonylamino-DMNQ inhibited the phosphorylation of PDGF receptor${\beta}$(PDGF-$R{\beta}$) enhanced by PDGF at $Tyr^{579}$, $Tyr^{716}$, $Tyr^{751}$, and $Tyr^{1021}$ residues. Subsequently, 2-nonylamino-DMNQ inhibited PDGF-induced phosphorylation of STAT3, ERK1/2, Akt, and $PLC{\gamma}1$. Therefore, our results indicate that 2-nonylamino-DMNQ inhibits PDGF-induced VSMC proliferation by blocking PDGF-$R{\beta}$ autophosphorylation, and subsequently PDGF-$R{\beta}$-mediated downstream signaling pathways.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.131-137
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• 2020

A series of Dy³⁺, Sm³⁺, and Dy³⁺/Sm³⁺ doped Gd₂WO₆ phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd₂WO₆ crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy³⁺-doped Gd₂WO₆ phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm³⁺-doped Gd₂WO₆ phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the ⁶G_5/2 → ⁶H_5/2, ⁶G_5/2 → ⁶H_9/2, and ⁶G_5/2 → ⁶H_11/2 transitions of Sm³⁺, respectively. The PL emission spectra of the Dy³⁺- and Sm³⁺-codoped Gd₂WO₆ phosphors showed the blue and yellow emission lines originating from the ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁴H_13/2 transitions of Dy³⁺ and reddish-orange and red emission bands due to the ⁴G_5/2 → ⁶H_7/2 and ⁴G_5/2 → ⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy³⁺ ions gradually decreased, while those of the three emission bands due to the Sm³⁺ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd₂WO₆:5 mol% Dy³⁺, 1 mol% Sm³⁺ phosphors were (0.406, 0.407), which was located in the warm white light region.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.173-177
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• 2010

Thermal stabilizing effect of $Yb^{3+},\;Er^{3+}$ codoping into $TiO_2$ powder prepared by sol-gel method and its upconversion characteristics were analyzed. The effect of $TiO_2:Yb^{3+},\;Er^{3+}$ ions on crystallinity and phase transition was studied by X-ray diffraction (XRD). The change of band-gap energy induced from Yb and Er codoping was analyzed by UV-Vis. The band-gap energy of $TiO_2$ have been slightly narrowed by $Yb^{3+},\;Er^{3+}$ codoping, which indicated that the $Yb^{3+},\;Er^{3+}$ ions can enhance the photo-catalytic property of $TiO_2$. green and red up-conversions of $Yb^{3+}$ and $Er^{3+}$ co-doped $Y_2O_3:Yb^{3+},\;Er^{3+}$ phosphor were analyzed by PL equipped with 980 nm laser.

• Imaging Science in Dentistry
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• v.48 no.2
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• pp.97-101
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• 2018

Purpose: This study evaluated the radiopacity of contemporary luting cements using conventional and digital radiography. Materials and Methods: Disc specimens (N=24, n=6 per group, ø$7mm{\times}1mm$) were prepared using 4 resin-based luting cements (Duolink, Multilink N, Panavia F 2.0, and U-cem). The specimens were radiographed using films, a complementary metal oxide semiconductor (CMOS) sensor, and a photostimulable phosphor plate (PSP) with a 10-step aluminum step wedge (1 mm incremental steps) and a 1-mm-thick tooth cut. The settings were 70 kVp, 4 mA, and 30 cm, with an exposure time of 0.2 s for the films and 0.1 s for the CMOS sensor and PSP. The films were scanned using a scanner. The radiopacity of the luting cements and tooth was measured using a densitometer for the film and NIH ImageJ software for the images obtained from the CMOS sensor, PSP, and scanned films. The data were analyzed using the Kruskal-Wallis and Mann-Whitney U tests. Results: Multilink (3.44-4.33) showed the highest radiopacity, followed by U-cem (1.81-2.88), Panavia F 2.0 (1.51-2.69), and Duolink (1.48-2.59). The $R^2$ values of the optical density of the aluminum step wedge were 0.9923 for the films, 0.9989 for the PSP, 0.9986 for the scanned films, and 0.9266 for the CMOS sensor in the linear regression models. Conclusion: The radiopacities of the luting materials were greater than those of aluminum or dentin at the same thickness. PSP is recommended as a detector for radiopacity measurements because of its accuracy and convenience.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.193-200
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• 2016

Characteristics of $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ phosphorescent phosphors synthesized by solid state reaction and polymerized complex method were comparatively analyzed. In order to evaluate thermal stability of $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ phosphorescent phosphors at high temperature, phosphorescent properties of $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ were investigated with thermal treatment at $1250^{\circ}C$ under reducing atmosphere, which was the general heat treatment conditions for ceramic manufacturing process. The phosphorescent properties of thermally treated $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ phosphors synthesized by solid state reaction and polymerized complex method were investigated. The crystal structure and crystallite size were observed through XRD analysis. Microstructure and particle size of thermally treated $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ phosphors were analyzed by SEM and PSA. Photoluminescence and afterglow characteristics of thermally treated $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ phosphorescent phosphors were measured by spectrofluorometer.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.448-452
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• 2001

The ZnS:Cu,Cl thick film electroluminescent devices with the stacking type(separated with phosphors and insulator layers) and the composite type (mixed with phosphor and insulator materials) emission layers were fabricated on ITO/glass substrates by the screen printing methods. The opical and electrical properties were investigated as fundations of applied voltages and frequencies. In the stacking type, the luminance was about 58 cd/$\m^2$ at the applied voltage of 400Hz, 200V and increased to 420 cd/$\m^2$ with increasing the frequency to 30Hz. For the composite type devices, the threshold voltage was 45V and the maximum luminance was 670 cd/$\m^2$ at the driving condition of 200V, 30Hz. The value of luminance of the composite type device showed 1.5 times higher than that of stacking type device. The main emission peak was 512 nm of bluish-green color at 1Hz frequency below and shifted to 452 nm in the driving frequency over 5Hz showing the blue omission color. There were no distinct differences of the main emission peaks and color coordinate for both samples.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.227-235
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• 2001

In this work, Zn$_2$SiO$_4$:Mn phosphors were prepared by solid state reaction. The effect of sintering/reduction temperature, flow rate of H$_2$-5%/$N_2$-95% mix gas, and ball milling conditions have been investigated on the sake of PDP(Plasma Display Panel) application. The characteristics such as particle morphology and photoluminescence of prepared phosphors were compared to those of commercial Zn$_2$SiO$_4$:Mn Phosphors. It was found that the Phosphor synthesized at 130$0^{\circ}C$ with 0.08 Mn concentration had a maximum brightness, This brightness was increased more 20% by reduction treatment under 100me/min flow rate of 5%H$_2$-95%$N_2$ mixed gas. The size of particles decreased under 3$\mu\textrm{m}$ after ball milling. Especially, higher luminescence was obtained in our Zn$_2$SiO$_4$:Mn phosphors than commercial Zn$_2$SiO$_4$:Mn phosphors, so that they are able to be applied for PDP.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.184-189
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• 2013

$Ba_2SiO_4:Eu^{2+}$ ($B_2S:Eu^{2+}$) powders were prepared by firing the dry gel obtained by the sol-gel and the hybrid process (sol-gel and combustion), respectively, and their structure and luminescence were investigated. Tetraethyl orthosilicate (TEOS) was used as a Si source. The phase transition was observed with the TEOS content. With 1.2M TEOS, the powders prepared by the sol-gel process without prior calcination were composed of the $B_2S:Eu^{2+}$ single phase, whereas those by the sol-gel and the hybrid process with prior calcination consisted of the dominant $B_2S:Eu^{2+}$ and minor $BaSiO_3:Eu^{2+}$ ($BS:Eu^{2+}$) phases and their emission intensities were approximately two times higher than those without prior calcination. The hybrid process could reduce the process time innovatively compared to the sol-gel process, even though the former was a little inferior to the latter in the emission intensity of $B_2S:Eu^{2+}$. With 1.1M TEOS, the $B_2S:Eu^{2+}$ single phase was obtained by the hybrid process, and its green emission was observed at 505 nm originated from the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ions.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.