• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.1-4
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• 2005

Silicon oxynitride films were deposited using ammonia as a nitrogen source via PECVD (plasma enhanced chemical vapor deposition) to study the physical properties of the films. Silane and nitrous oxide were used as silicon and oxygen sources, respectively. The composition of the silicon oxynitride films was well controlled by changing the ratios of the sources and confirmed by XPS. The silicon oxynitride films with high oxygen content showed bigger compressive stress and less refractive index, while the values of surface roughness were around 1 nm, irrespective of the variation of the source ratios.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.277-277
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• 2010

In this report, we present a very effective growing method of graphene using plasma enhanced chemical vapor deposition(PECVD). The graphene is successfully grown on copper substrate. Low temperature growing is obtained with methane and hydrogen plasma. The graphene layers are analyzed by Raman spectroscopy and atomic force microscope. We also provide a transfer technique of graphene layer onto silicon substrate to build up various kinds of application devices.

• 한국정보통신학회논문지
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• 제11권11호
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• pp.2095-2099
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• 2007

본 연구에서는 LCD, 이미지 센서 등의 개별 소자인 비정질 실리콘 박막 트랜지스터에서 게 이트 유전층 및 절연층으로 사용되는 비정질 질화 실리콘 박막을 사일랜($SiH_4$) 및 암모니아가스를 사용해서 PECVD(Plasma Enhanced Chemical Vapor Deposition) 진공 증착장비로 최적의 비정질질화실리콘 박막 증착 조건을 확립한다. 먼저 반응실의 진공도, rf 전력, $SiH_4$ 및 질소 그리고 암모니아가스의 flow rate를 변화시키면서 형성된 박막의 특성을 조사한다. 계속해서 다른 변수를 고정시킨 상태에서 rf 전력을 변화시키고 다음에는 반응실의 진공도 등을 변화시켜 최적의 증착조건을 확립한다. 이렇게 확립된 증착조건을 사용하여 비정질질화실리콘박막을 제작하여 특성을 측정한 결과 우수한 성능을 나타냈음을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.89-89
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• 1996

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• 한국재료학회지
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• 제8권4호
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• pp.359-361
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• 1998

$SiH_{4}$를 반응물질로 사용하여 electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD)로 실리콘 기판위에 증착한 수소화 비정질 실리콘(a-Si:H)으로부터 가시 photoluminescence(PL) 가 관찰되었다. a-si:H/Si로 부터의 PL은 다공질실리콘으로부터의 PL과 유사하였다. 급속열처리에 의해 $500^{\circ}C$에서 2분간 산소분위기에서 어닐링된 시편의 수소함량은 1~2%로 줄어들었고 시편은 가시 PL을 보여주지 않았는데 이는 a-Si:H의 PL과정에서 수소가 중요한 역할을 한다는 것을 뜻한다. 증착된 a-Si:H의 두께가 증가함에 따라 PL의 세기는 감소하였다. $SiH_{4}$를 사용하여 ECR-PECVD에 의해 Si상에 증착된 a-Si:H로부터의 가시 PL은 Si과 증착된 a-Si:H막 사이에 증착이 이루어지는 동안에 형성된 수소화실리콘으로부터 나오는 것으로 추론된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.935-938
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• 2001

Carbon nanotubes(CNTs) was successfully grown on Ni coated silicon wafer substrate by applying PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15∼30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of the gas mixture such as C$_2$H$_2$-NH$_3$was systematically investigated by adjusting the gas mixing ratio in temperature of 600$^{\circ}C$ under the pressure of 0.4 torr. The diameter of the grown CNTs was 40∼150nm. As NH$_3$etching time increased the diameters of the nanotubes decreased whereas the density of nanotubes increased. TEM images clearly demonstrated synthesized nanotubes was multiwalled. We investigated electrical properties for the application of FED.

• ETRI Journal
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• 제31권6호
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.171-171
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• 2011

Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.