• Particle and aerosol research
• /
• v.11 no.4
• /
• pp.93-98
• /
• 2015

Particles which generated from plasma enhanced chemical vapor deposition (PECVD) during thin film deposition process can affect to the process yield. By using light extinction method, ISPM can measure particles in the large-diameter pipe (${\leq}300mm$). In our research, in-situ particle monitor (ISPM) sensor was installed at the 300 mm diameter exhaust-line to count the particles in each size. In-house flange for mounting the transmitting and receiving parts of ISPM was carefully designed and installed at a certain point of exhaust line where no plasma light affect to the light extinction measurement. Measurement results of trend changes on particle count in each size can confirm that ISPM is suitable for real-time monitoring of vacuum process.

• Applied Chemistry for Engineering
• /
• v.19 no.3
• /
• pp.322-325
• /
• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer was deposited using a plasma-enhanced chemical vapor deposition (PECVD) instrument. The more the R.F. power/pressure ratio in FT-IR spectrum, the less the hydrogen quantity and the dangling bond in amorphous carbon films observed so that the mechanical property of the films are improved related to the density. Also, with the increase D peak in Raman spectrum is increased and the ring structure's films are produced. According to these results, hardness and modulus are 12 GPa and 85 GPa, respectively. The refractive index (n) and extinction coefficients (k) of the deposited films are increased with the increase in a power/pressure ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.328-331
• /
• 2000

Carbon nanotube(CNT) was successfully grown on Ni-W alloyed substrate by applying PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni-W alloyed substrate was prepared by mechanical alloying method. In order to find the optimum growth condition, initially two different types of gas mixtures such ac $C_2$H$_2$-H$_2$and $C_2$H$_2$-MH$_3$were systematically investigated by adjusting results on the mixing ratio in temperature range of 500 to 80$0^{\circ}C$. In this work, we will report the preliminary results on the CNT processed by PECVD, which were characterized by XRD, SEM and TEM. Finally we will evalute the effect on CNT growth by changing many processing parameters, such as typical gas, mixing ratio between 2 mixture, plasma power and etc.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1446-1449
• /
• 1996

Thin films of diamond-like carbon(DLC) have been deposited using a magnetron plasma-enhanced chemical vapor deposition(PECVD) method with an rf(13.56 MHz) plasma of $C_{3}H_{8}$. From the Langmuir probe I-V characteristics, it can be observed that increasing the magnetic field yields an increase of the temperature($T_e$) and density($N_e$) of electron. At a magnetic field of 82 Gauss, the estimated values of $T_e$ and $N_e$ are approximately $1.5\;{\times}\;10^5$ K(13.5 eV) and $1.3\;{\times}\;10^{11}\;cm^{-3}$, respectively. Such a highly dense plasma can be attributed to the enhanced ionization caused by the cyclotron motion of electrons in the presence of a magnetic field. On the other hand, the negative dc self-bias voltage($-V_{sb}$) decreases with an increasing magnetic field, which is irrespective of gas pressure in the range of $1{\sim}7$ mTorr. This result is well explained by a theoretical model considering the variation of $T_e$. Deposition rates of DLC films increases with a magnetic field. This may be due to the increased mean free path of electrons in the magnetron plasma. Structures of DLC films are examined by using various techniques such as FTIR and Raman spectroscopy. Most of hydrocarbon bonds in DLC films prepared consist of $sp^3$ tetrahedral bonds. Increasing the rf power leads to an enhancement of cross-linking of carbon atoms in DLC films. At approximately 140 W, the maximum film density obtained is about 2.4 $g/cm^3$.

• Journal of the Korean Ceramic Society
• /
• v.38 no.6
• /
• pp.531-536
• /
• 2001

SiCl$_4$/CH$_4$/H$_2$계를 사용한 플라즈마 화학증착법(PECVD)으로 실리콘(100) 기판 위에 3C-SiC막을 117$0^{\circ}C$~1335$^{\circ}C$의 온도범위에서 증착하였다. 증착온도, 유입가스비, R$_{x}$ [=CH$_4$/(CH$_4$+H$_2$)], 그리고 r.f. power를 변화시켜 증착막의 결정성에 대해 검토하였다. Thermal CVD에 비해 PECVD법은 박막의 증착속도를 향상시켰다. 증착된 3C-SiC은 (111) 면으로 최대의 우선배향성을 지님을 알 수 있었다. 실리콘 기판 위의 3C-SiC막의 결정성은 R$_{x}$값에 의존하였으며, R$_{x}$가 감소할수록 결정성이 더욱 향상되었다. Free Si가 3C-SiC막과 함께 증착되었으나, 증착온도와 r.f power가 증가함에 따라 free Si의 함량은 감소하였다. 증착온도 127$0^{\circ}C$, 유입가스비 R$_{x}$=0.04, r.f. power가 60W에서 비교적 결정성을 가진 3C-SiC막을 얻을 수 있었다.

• Journal of Korean Ophthalmic Optics Society
• /
• v.9 no.2
• /
• pp.291-299
• /
• 2004

DLC films were deposited using the ECR-PECVD method with the fixed deposition condition, such as ECR power, methane and hydrogen gas-flow rates and deposition time, for various substrate bias voltage. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristic of the films were analyzed using the FTIR, Raman, and UV/Vis spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio(ID/IG) of the D and G peak was increased as the substrate bias voltage increased and films hardness was increased. Optical transmittances of DLC film were decreased with increasing deposition time and substrate bias voltage. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Journal of the Korean Vacuum Society
• /
• v.15 no.4
• /
• pp.374-379
• /
• 2006

In this study, carbon nanotubes (CNTs) were grown on glass substrates coated with Ni/Cr by an atmospheric pressure plasma enhanced chemical vapor deposition(AP-PECVD) and their structural and electrical characteristics were investigated as a possible application to the field emitter of field emission display (FED) devices. The substrate temperature ($400{\sim}500^{\circ}C$) were varied and the grown CNTs were multi wall CNTs (at $500^{\circ}C$, 15 - 20 layers of graphene sheets, distance of each layer : 0.3nm, inner diameter: 10 - 15nm, outer diameter: 30 - 40nm). The ratio of defective carbon peak to graphite carbon peak of the CNTs grown at $500^{\circ}C$ (C measured by fourier transform(FT)-Raman was 0.772 $I_D / I_G$ ratio. When field emission properties were measured, the turn-on field was $2.92V/{\mu}m$ and the emission field at $1mA/cm^2$ was $5.325V /{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.34-38
• /
• 1992

Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO$_2$films formed by Plasma-enhanced chemical vapor deposition (PECVD) have been studied. PECVD SiO$_2$films were formed with substrate temperature, and annealing time and temperature of RTP changed, and its'characteristics were obsreved by C-V measurement. We found that the quality of SiO$_2$films formed by PECVD depended on annealing time rather than substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.186-187
• /
• 2006

본 논문에서는 PECVD를 이용하여 증착시킨 실리콘 산화막에 영향을 주는 파라미터 입력에 따른 박막의 특성을 평가하기 위하여 먼저 통계적 실험계획을 통해 산화막 특성에 유의한 영향을 미치는 요인을 분석하고, 분석된 결과를 이용하여 가장 유의한 교호작용을 신경망 모델링에서 입력파라미터로 포함시킴으로서 교호작용을 고려하지 않은 경우와의 학습결과를 비교하여 두가지 모델링 방법 중 교호작용을 고려한 신경망 모델의 경우가 PECVD의 물리적 현상을 더 명확히 설명할 수 있음을 확인했다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.90.2-90.2
• /
• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.